1. A novel route for the inclusion of metal dopants in silicon.
- Author
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Jules A Gardener, Irving Liaw, Gabriel Aeppli, Ian W Boyd, Richard J Chater, Tim S Jones, David S McPhail, Gopinathan Sankar, A Marshall, Marcin Sikora, Geoff Thornton, and Sandrine Heutz
- Subjects
THIN films ,SILICON ,METALS ,ULTRAVIOLET radiation ,SEMICONDUCTORS ,MASS spectrometry ,LOW temperatures - Abstract
We report a new method for introducing metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry and x-ray absorption spectroscopy show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays. [ABSTRACT FROM AUTHOR]
- Published
- 2010
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