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A custom system has been developed for medical image acquisition and processing in both the visible and the infrared (IR) bands. Unlike some non-customizable commercial devices, this system can easily be adapted to different application scenarios by adding new peripherals and/or custom image processing algorithms. Portable, autonomous, and easy to use, it offers immediate results at the moment of examination and has a competitive cost. The system comprises a Single Board Computer (SBC) controlling a group of sensors and peripherals. The hardware implementation, described in detail in this paper, was adapted for two different application scenarios. First, the system was employed to differentiate between different kinds of vascular anomalies. The clinical results obtained are reported. The device was then redesigned to automatically detect people with high body temperatures in public environments. The system’s real-time image processing capabilities in both scenarios are demonstrated. Specific algorithms were implemented by the authors for each case study. [ABSTRACT FROM AUTHOR]

This paper presents a low-power, low-noise microsystem for the recording of neural local field potentials or intracranial electroencephalographic signals. It features 32 time-multiplexed channels at the electrode interface and offers the possibility to spatially delta encode data to take advantage of the large correlation of signals captured from nearby channels. The circuit also implements a mixed-signal voltage-triggered auto-ranging algorithm which allows to attenuate large interferers in digital domain while preserving neural information. This effectively increases the system dynamic range and avoids the onset of saturation. A prototype, fabricated in a standard 180 nm CMOS process, has been experimentally verified in-vitro with cellular cultures of primary cortical neurons from mice. The system shows an integrated input-referred noise in the 0.5–200 Hz band of 1.4 μVrms for a spot noise of about 85 nV √Hz. The system draws 1.5 μW per channel from 1.2 V supply and obtains 71 dB + 26 dB dynamic range when the artifact-aware auto-ranging mechanism is enabled, without penalising other critical specifications such as crosstalk between channels or common-mode and power supply rejection ratios. [ABSTRACT FROM AUTHOR]

Single photon avalanche diodes (SPADs) featuring a high detection rate of near-IR photons are much desired for outdoor LiDAR based on direct time-of-flight (ToF). This article presents the complete design flow of a SPAD detector for LiDAR. First, the selection of the emitter wavelength is discussed, considering the maximum allowed power underlying eye safety regulations, solar irradiance, and reflected signal power. Then, the choice of the SPAD structure is discussed based on the TCAD simulation of quantum efficiency and crosstalk. Next, the proposed P-well/ Deep N-well SPAD is explained. The electro-optical characterization of the detectors is presented as well. The performance of the time-of-flight image sensors is determined by the characteristics of the individual SPADs. To fully characterize this technology, devices with various sizes, shapes, and guard ring widths have been fabricated and tested. The measured mean breakdown voltage is 18 V. The proposed structure has a 0.4 Hz/ $\mu $ m2 dark count rate and 0.5% afterpulsing. The FWHM (total) jitter and photon detection probability at 850nm wavelength are of 92 ps and 10%. All figures have been measured at 3 V excess voltage. Finally, the performance of the SPAD detector is analyzed by evaluating the signal-to-noise ratio at different acquisition times. Distance ranging measurements have been performed, achieving a depth resolution of 1 cm up to 6.3 m range. [ABSTRACT FROM AUTHOR]

High-density digital-Silicon Photomultipliers call for high-performance Single Photon Avalanche Diodes (SPAD) front-ends. Power consumption and fill factor are significant concerns in this kind of sensors. This paper presents a compact and power-efficient macro-cell where several SPADs share the active recharge circuitry for increased fill factor. Integrated with 110nm technology for image sensors, the array of macro-cells has 30% fill factor. Also, following the first firing of any SPAD during the same macro-pixel dead-time, the other SPADs are disabled for power saving. Of course, subsequent triggers are lost. However, they would have been masked by the OR pulse combining scheme. Besides this event-driven disabling feature, the macro-cell includes circuitry to disable noisy devices – similar to other SiPM cells. Also, the macro-cell features control of the dead-time. This paper describes the macro-cell concept, its associated analysis and design equations. Key parameters of the design are discussed to optimize power consumption. Design scalability is contemplated as well. Experimental results proved that the power efficiency of the proposed scheme depends on the illumination power. Also, power efficiency is linked to the pulse overlapping probability. For example, power saving up to 30% is obtained with 4 sub-cells per macro-cell, when pulse overlapping is about 11% for correlated light or the pulse rate per sub-cell is about 100kHz for uncorrelated light. [ABSTRACT FROM AUTHOR]

This article presents a detailed comparative analysis of two possible stacked-diode configurations operating as solar cells. The performance of a single p-well – deep n-well diode is compared with the combination of such diode with a n-diff–p-well diode in parallel. Both configurations occupy the same area but offer different performance and, accordingly, they can have different application scopes. A test circuit to gauge the diodes performance and their spectral sensitivity has been integrated along with the two diode configurations in a $0.18~\mu \text{m}$ CMOS standard fabrication technology. The measured experimental results for the two diode configurations under study are validated with an analytical diode physical model. [ABSTRACT FROM AUTHOR]

This paper presents a SAR converter based mixed-signal multiplier for the feature extraction of neural signals using quadratic operators. After a thorough analysis of design principles and circuit-level aspects, the proposed architecture is explored for the implementation of two quadratic operators often used for the characterization of neural activity, the moving average energy (MAE) operator and the nonlinear energy operator (NEO). Programmable chips for both operators have been implemented in a HV-180 nm CMOS process. Experimental results confirm their suitability for energy computation and action potential detection and the accomplished area×power performance is compared to prior art. The MAE and NEO prototypes, at a sampling rate of 30kS/s, consume 116 nW and 178 nW, respectively, and digitize both the input neural signal and the operator outcome, with no need for digital multipliers. [ABSTRACT FROM AUTHOR]

In this paper, we present a new image sensor architecture for fast and accurate compressive sensing (CS) of natural images. Measurement matrices usually employed in CS CMOS image sensors are recursive pseudo-random binary matrices. We have proved that the restricted isometry property of these matrices is limited by a low sparsity constant. The quality of these matrices is also affected by the non-idealities of pseudo-random number generators (PRNG). To overcome these limitations, we propose a hardware-friendly pseudo-random ternary measurement matrix generated on-chip by means of class III elementary cellular automata (ECA). These ECA present a chaotic behavior that emulates random CS measurement matrices better than other PRNG. We have combined this new architecture with a block-based CS smoothed-projected Landweber reconstruction algorithm. By means of single value decomposition, we have adapted this algorithm to perform fast and precise reconstruction while operating with binary and ternary matrices. Simulations are provided to qualify the approach. [ABSTRACT FROM AUTHOR]

This brief presents a differential time-domain comparator formed by two voltage controlled delay lines, one per input terminal, and a binary phase detector for comparison solving. The propagation delay through the respective lines can be adjusted with a set of digitally controlled inversion-mode varactors. These varactors provide tuning capabilities to the comparator; feature which can be exploited for offset calibration. This is demonstrated with the implementation of a differential 10-bit successive approximation register analog-to-digital converters. The design, fabricated in a 0.18- $\mu \text{m}$ CMOS process, includes an automatic mechanism for adjusting the capacitance of the varactors in order to calibrate the offset of the whole converter. Correct functionality was measured in all samples. [ABSTRACT FROM AUTHOR]

This paper presents an integer-based digital processor for the calculation of phase synchronization between two neural signals. It is based on the measurement of time periods between two consecutive minima. The simplicity of the approach allows for the use of elementary digital blocks, such as registers, counters, and adders. The processor, fabricated in a 0.18- $\mu$ m CMOS process, only occupies 0.05 mm $^2$ and consumes 15 nW from a 0.5 V supply voltage at a signal input rate of 1024 S/s. These low-area and low-power features make the proposed processor a valuable computing element in closed-loop neural prosthesis for the treatment of neural disorders, such as epilepsy, or for assessing the patterns of correlated activity in neural assemblies through the evaluation of functional connectivity maps. [ABSTRACT FROM AUTHOR]

The current trend in the design of systems based on CMOS SPADs is to adopt smaller technological nodes, allowing the co-integration of additional electronics for the implementation of complex digital systems on chip. Due to their simplicity, a way to reduce the area occupied by the integrated electronics is the use of passive quenching circuits (PQCs) instead of active (AQCs) or mixed (MQCs) ones. However, the recharge phase in PQCs is slower, so the device can be retriggered before this phase ends. This paper studies the phenomena of afterpulsing and retriggering, depending on the characteristics of the SPADs and the working conditions. In order to do that, a test chip containing SPADs of different size has been characterized in several operating environments. A mathematical model has been proposed for fitting afterpulsing phenomenon. It is shown that retriggering can be also described in terms of this model, suggesting that it is linked to carriers trapped in the shallow levels of the semiconductor and that should be taken into account when considering the total amount of afterpulsing events. [ABSTRACT FROM AUTHOR]

Time-of-flight (ToF) image sensors based on single-photon detection, i.e., SPADs, require some filtering of pixel readings. Accurate depth measurements are only possible if the jitter of the detector is mitigated. Moreover, the time stamp needs to be effectively separated from uncorrelated noise, such as dark counts and background illumination. A powerful tool for this is building a histogram of a number of pixel readings. Future generation of ToF imagers are seeking to increase spatial and temporal resolution along with the dynamic range and frame rate. Under these circumstances, storing the complete histogram for every pixel becomes practically impossible. Considering that most of the information contained by the histogram represents noise, we propose a highly efficient method to store just the relevant data required for the ToF computation. This method makes use of the shifted inter-frame histogram. It requires a memory as low as 128 times smaller than storing the complete histogram if the pixel values are coded on up to 15 bits. Moreover, a fixed 28 words memory is enough to process histograms containing up to 215 bins. In exchange, the overall frame rate only decreases to one half. The hardware implementation of this algorithm is presented. Its remarkable robustness for a low SNR of the ToF estimation is demonstrated by Matlab simulations and FPGA implementation using input data from a SPAD camera prototype. [ABSTRACT FROM AUTHOR]

We have investigated the capabilities of a custom asynchronous spiking image sensor operating in the Near Infrared band to study flame radiation emissions, monitor their transient activity, and detect their presence. Asynchronous sensors have inherent capabilities, i.e., good temporal resolution, high dynamic range, and low data redundancy. This makes them competitive against infrared (IR) cameras and CMOS frame-based NIR imagers. In this paper, we analyze, discuss, and compare the experimental data measured with our sensor against results obtained with conventional devices. A set of measurements have been taken to study the flame emission levels and their transient variations. Moreover, a flame detection algorithm, adapted to our sensor asynchronous outputs, has been developed. Results show that asynchronous spiking sensors have an excellent potential for flame analysis and monitoring. [ABSTRACT FROM AUTHOR]

CMOS Image Sensors (CIS) are key for imaging technologies. These chips are conceived for capturing optical scenes focused on their surface, and for delivering electrical images, commonly in digital format. CISs may incorporate intelligence; however, their smartness basically concerns calibration, error correction and other similar tasks. The term CVISs (CMOS VIsion Sensors) defines other class of sensor front-ends which are aimed at performing vision tasks right at the focal plane. They have been running under names such as computational image sensors, vision sensors and silicon retinas, among others. [ABSTRACT FROM AUTHOR]

CMOS image sensors based on single-photon avalanche-diodes (SPAD) are suitable for 2D and 3D vision. Limited by uncorrelated noise and/or low illumination conditions, image capturing becomes nearly impossible in a single-shot exposure time. Moreover, the depth accuracy is affected by jitter. Therefore, many frames need to be taken to reconstruct the final accurate image. The proposed reconstruction algorithm is based on pixel-wise histogram building. Specifically, a histogram is built on the fly for each pixel of the array from the ongoing acquired frames. This paper presents the design and implementation on FPGA of a real-time pixel-wise inter-frame histogram builder at 1 kfps. The design has been proven with a $64\times 64$ -pixels SPAD camera. Its remarkable robustness has been demonstrated in harsh conditions, such as 42 kHz of dark count rate (DCR) and high background illumination up to 20 times larger than the DCR. The system has a graphic user interface for 2D/3D imager configuration, image streaming, and pixel-wise histogram streaming. [ABSTRACT FROM PUBLISHER]

We present a novel sun sensor concept. It is the very first sun sensor built with an address event representation spiking pixel matrix. Its pixels spike with a frequency proportional to illumination. It offers remarkable advantages over conventional digital sun sensors based on active pixel sensor (APS) pixels. Its output data flow is quite reduced. It is possible to resolve the sun position just receiving one single event operating in time-to-first-spike mode. It operates with a latency in the order of milliseconds. It has higher dynamic range than APS image sensors (higher than 100 dB). A custom algorithm to compute the centroid of the illuminated pixels is presented. Experimental results are provided. [ABSTRACT FROM PUBLISHER]

We report a high dynamic range (HDR) image sensor with a linear response that overcomes some of the limitations of sensors with pixels with self-reset operation. It operates similar to an active pixel sensor, but its pixels have a novel asynchronous event-based overflow detection mechanism. Whenever the pixel voltages at the integration capacitance reach a programmable threshold, the pixels self-reset and send out asynchronously an event indicating this. At the end of the integration period, the voltage at the integration capacitance is digitized and readout. Combining this information with the number of events fired by each pixel, it is possible to render linear HDR images. Event operation is transparent to the final user. There is no limitation for the number of self-resets of each pixel. The output data format is compatible with frame-based devices. The sensor was fabricated in the AMS 0.18- \mu \textm HV technology. A detailed system description and experimental results are provided in this paper. The sensor can render images with an intra-scene dynamic range of up to 130 dB with linear outputs. The pixels’ pitch is 25 \mu \textm and the sensor power consumption is 58.6 mW. [ABSTRACT FROM PUBLISHER]

This paper reports an integrated 64-channel neural spike recording sensor, together with all the circuitry to process and configure the channels, process the neural data, transmit via a wireless link the information and receive the required instructions. Neural signals are acquired, filtered, digitized and compressed in the channels. Additionally, each channel implements an auto-calibration algorithm which individually configures the transfer characteristics of the recording site. The system has two transmission modes; in one case the information captured by the channels is sent as uncompressed raw data; in the other, feature vectors extracted from the detected neural spikes are released. Data streams coming from the channels are serialized by the embedded digital processor. Experimental results, including in vivo measurements, show that the power consumption of the complete system is lower than 330 μW. [ABSTRACT FROM PUBLISHER]

Silicon photomultipliers can be used to infer the depth-of-interaction (DOI) in scintillator crystals. DOI can help to improve the quality of the positron emission tomography images affected by the parallax error. This paper contemplates the computation of DOI based on the standard deviation of the light distribution. The simulations have been carried out by GAMOS. The design of the proposed digital silicon photo-multiplier (d-SiPM) with focal plane detection of the center of mass position and dispersion of the scintillation light is presented. The d-SiPM shares the same off-chip time-to-digital converter such that each pixel can be individually connected to it. A miniature d-SiPM $8\times 8$ single-photon avalanche-diode (SPAD) array has been fabricated as a proof of concept. The SPADs along each row and column are connected through an OR combination technique. It has 256\times 256\mu \text{m}^{\mathrm { {2}}} without peripherals circuits and pads. The fill factor is about 11%. The average dark count rate of the mini d-SiPM is of 240 kHz. The average photon detection efficiency is 5% at 480 nm wavelength, room temperature, and 0.9 V excess voltage. The dynamic range is of 96 dB. The sensor array features a time resolution of 212 ps. The photon-timing SNR is 81 dB. The focal plane statistics of the light-spot has been proved as well by measurements. [ABSTRACT FROM PUBLISHER]

This paper introduces a CMOS vision sensor chip in a standard 0.18~\mu \textm CMOS technology for Gaussian pyramid extraction. The Gaussian pyramid provides computer vision algorithms with scale invariance, which permits having the same response regardless of the distance of the scene to the camera. The chip comprises $176 \times 120$ photosensors arranged into 88 \times 60$ processing elements (PEs). The Gaussian pyramid is generated with a double-Euler switched capacitor (SC) network. Every PE comprises four photodiodes, one 8 b single-slope analog-to-digital converter, one correlated double sampling circuit, and four state capacitors with their corresponding switches to implement the double-Euler SC network. Every PE occupies 44 \times 44~\mu \text{m}^{2} . Measurements from the chip are presented to assess the accuracy of the generated Gaussian pyramid for visual tracking applications. Error levels are below 2% full-scale output, thus making the chip feasible for these applications. Also, energy cost is 26.5 nJ/px at 2.64 Mpx/s, thus outperforming conventional solutions of imager plus microprocessor unit. [ABSTRACT FROM AUTHOR]

We have investigated and compared the performance of photodiodes built with stacked p/n junctions operating in parallel versus conventional ones made with single p/n junctions. We propose a method to characterize and compare photodiodes sensitivity. For this purpose, a dedicated chip in the standard AMS 180-nm HV technology has been fabricated. Four different sensor structures were implemented and compared. Experimental results are provided. Measurements show sensitivity enhancement ranging from 55% to 70% within the 500–1100 nm spectral region. The larger increment is happening in the near infrared band (up to 62%). Such results make stacked photodiodes suitable candidates for the implementation of photosensors in vision chips designed for standard CMOS technologies. [ABSTRACT FROM PUBLISHER]

This Special Section of the IEEE Journal of Solid-State Circuits (JSSC) features expanded versions of papers selected from those presented at the 48th ESSCIRC Conference, held at Technische Universität Dresden, Dresden, Germany, during September 3–6, 2018. [ABSTRACT FROM AUTHOR]

This brief describes a high-dynamic-range technique that compresses wide ranges of illuminations into the available signal range with a single exposure. An online analysis of the image histogram provides the sensor with the necessary feedback to dynamically accommodate changing illumination conditions. This adaptation is accomplished by properly weighing the influence of local and global illuminations on each pixel response. The main advantages of this technique with respect to similar approaches previously reported are as follows: 1) standard active-pixel-sensor circuitry can be used to render the pixel values and 2) the resulting compressed image representation is ready either for readout or for early vision processing at the very focal plane without requiring any additional peripheral circuit block. Experimental results from a prototype smart image sensor achieving a dynamic range of 102 dB are presented. [ABSTRACT FROM AUTHOR]

This paper presents a novel event-based vision sensor with two operation modes: 1) intensity mode and spatial contrast detection. They can be combined with two different readout approaches: 1) pulse density modulation and time-to-first spike. The sensor is conceived to be a node of an smart camera network made up of several independent an autonomous nodes that send information to a central one. The user can toggle the operation and the readout modes with two control bits. The sensor has low latency (below 1 ms under average illumination conditions), low power consumption (19 mA), and reduced data flow, when detecting spatial contrast. A new approach to compute the spatial contrast based on inter-pixel event communication less prone to mismatch effects than diffusive networks is proposed. The sensor was fabricated in the standard AMS4M2P 0.35- \mu \textm process. A detailed system-level description and experimental results are provided. [ABSTRACT FROM PUBLISHER]