1. Vertically Stacked Broadband GNIF‐MoS2/p‐Ge Photodetector for Dark Current Suppression, High Photoresponse, and Ultrafast Transient Response.
- Author
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Pandey, Rajiv Kumar, Choi, Hwayong, Kim, Young‐Hoon, Jeong, Subin, Kim, Yeji, and Heo, Junseok
- Subjects
THIN films ,SURFACE plasmons ,VISIBLE spectra ,METALLIC films ,SURFACE properties - Abstract
The proposed model structure, featuring a gold (Au) nano‐island film (GNIF) integrated with a vertically stacked van der Waals heterojunction and offering an elegant platform for high‐performance, efficient, and sensitive photodetection across a broad spectral range, is designated as GNIF‐MoS₂/p‐Ge(MoS2 = Molybdenum disulfide, p‐Ge = p type germanium). The GNIF is fabricated via ultrathin film deposition, based on the surface dewetting properties of MoS2. The as‐fabricated photodetector (PD), offering ≈20 times reduction in dark current and characterized by wavelength‐dependent high responsivity (R(λ)), photoconductive gain (G(λ)), and detectivity (D(λ)), respond to a broad spectral range from visible light (400 nm) to short wave infrared (SWIR) (1600 nm). The ultrahigh transient response (τr) is found to be ≈2.5 and 16 µs for the 470 (visible light) and 1550 (SWIR) nm wavelengths, respectively, resulting in 3‐dB bandwidths of up to ≈48 kHz, which is considered high for such devices. To understand the inherent mechanisms of broadband detection and the high photoresponse and ultrafast transient response of PDs, a meticulous investigation is conducted on the wavelength‐dependent behaviors, depletion width changes, and material properties. The results provide valuable insights and a basis for the construction of suitable PDs based on nanometer‐thin metal films, 2D semiconductors, and a 3D hybrid structure. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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