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The generation of exciton–polaritons through strong light–matter interactions represents an emerging platform for exploring quantum phenomena. A significant challenge in colloidal nanocrystal-based polaritonic systems is the ability to operate at room temperature with high fidelity. Here, we demonstrate the generation of room-temperature exciton–polaritons through the coupling of CdSe nanoplatelets (NPLs) with a Fabry–Pérot optical cavity, leading to a Rabi splitting of 74.6 meV. Quantum–classical calculations accurately predict the complex dynamics between the many dark state excitons and the optically allowed polariton states, including the experimentally observed lower polariton photoluminescence emission, and the concentration of photoluminescence intensities at higher in-plane momenta as the cavity becomes more negatively detuned. The Rabi splitting measured at 5 K is similar to that at 300 K, validating the feasibility of the temperature-independent operation of this polaritonic system. Overall, these results show that CdSe NPLs are an excellent material to facilitate the development of room-temperature quantum technologies. [ABSTRACT FROM AUTHOR]

Carbon nanotube (CNT) is one of the most significant materials for the development of faster and improved performance of nanoscaled transistors. This work aims at analysing a trade-off between device performance and device size of CNT-based transistor. Acoustic and optical phonon (OP) scattering along with the elastic scattering lead to the non-ballistic performances of those transistors. The main focus of this work is mainly on finding an optimum diameter to obtain the highest degree of ballisticity (DoB) from both single-walled (SWCNT-FET) and double-walled CNT field-effect transistors (DWCNT-FET). At first, an n-type SWCNT-FET has been considered and the diameter dependence on DoB has been simulated. The effects of drain voltage, gate voltage and channel length have been investigated for such characteristics followed by a comparison with DWCNT-FET structure. First of all, it has been found that DoB along with the optimum diameter increases with the increase of (VDS-VGS). The increase of channel length, however, degrades the ballistic performance demanding a higher diameter to reach the optimum point. Finally, it can be concluded that optimum diameter for DWCNT-FET reaches earlier than SWCNT-FET but at lower DoB. [ABSTRACT FROM AUTHOR]