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Radiation-hard photodiode structures implemented in medical applications are designed in 180-nm CMOS technology. Designed photodiodes were tested against total ionizing doses (TIDs) of 100, 200, and 400 Gy(Si), respectively, and they show high stability in terms of dark current characteristics. After TID of 400 Gy(Si), the dark current increased by up to 15%, compared to the unirradiated characteristics values. TCAD electrical simulations were performed and calibrated with the dark current measurements in order to explain the impact of generated defects due to ionizing radiation. Parameters that are used to model TID radiation have been varied in physical boundaries in order to achieve the desired fitting with the measurements. It is shown that due to the filling of acceptor interface traps with electrons, the space charge region extends, but the extension is limited and partially compensated by the fixed positive charges in the silicon nitride layer. The presented photodiodes result in the improved radiation hardness over the design in 350-nm CMOS technology. [ABSTRACT FROM AUTHOR]

ABSTRACT Back-side diffractive gratings enhance a solar cell's efficiency by trapping light inside the cell and increasing the probability of absorption. We introduce a three-dimensional, polarization-sensitive optical model combining ray tracing and rigorous coupled-wave analysis to investigate silicon solar cells with pyramidal front-side texturing and back-side gratings. Parameter optimization is performed to increase the short-circuit current density for a linear binary grating with grating period p and height h. For the investigated 180-µm-thick pyramidally textured silicon solar cells, the simulation yields a maximum enhancement of the short-circuit current density by ΔJSC = 1.79 mA/cm2 corresponding to an absolute efficiency increase of Δη = 0.90%. Furthermore, we report on fabrication and reflectance measurements of solar cells with gratings and key challenges in achieving efficiency gains using back-side diffractive gratings. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

We present an active pixel for a spectral domain optical coherence tomography sensor on a chip, where optical components are realized in a photonic layer and monolithically integrated with the electronics, whereby light is brought to the pixels using waveguides. The core of the pixel is an amplifier with capacitive feedback (so-called capacitive transimpedance amplifier), apart from that, a correlated double sampling circuit is implemented within the pixel. The proposed active pixel is based on a PIN photodiode and fabricated in 0.35-μm high-voltage CMOS technology. We use three different epitaxial starting material thicknesses (20, 30, and 40 μm) in order to find the device with best performance. The pixel is optimized for high efficiency in a spectral range between 800 and 900 nm. We explain advantages in the spectral responsivity and crosstalk of this pixel over conventional p / n photodiode-based pixels in standard CMOS processes and over the pinned photodiode-based pixel. We also present measured pixel parameters and give comparison with prior work. [ABSTRACT FROM AUTHOR]