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Alloys between tin and tin telluride have been prepared and their thermal conductivity has been measured in the temperature range ~90–300 K. We have determined the lattice (χl) and electron (χel) contributions to the thermal conductivity of the alloys and their thermal resistivity due to structural defects (Sn vacancies and defects). We assume that, at low excess Sn concentrations, Sn atoms form electroneutral complexes with Sn vacancies, leading to a reduction in χl and χel. At high concentrations, Sn atoms fill vacancies, leading to an increase in χl. [ABSTRACT FROM AUTHOR]

The photothreshold of an α-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick, which corresponds to the doublet unit cell size of a bulk crystal. It is shown that the magnitude of the photothreshold is almost invariable with a crystal thickness larger than 10 layers. [ABSTRACT FROM AUTHOR]