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Real Earth media are not perfectly elastic. Instead, they attenuate propagating mechanical waves. This anelastic phenomenon in wave propagation can be modeled by a viscoelastic mechanical model consisting of several standard linear solids. Using this viscoelastic model, we approximate a constant Q over a frequency band of interest. We use a four-element viscoelastic model with a trade-off between accuracy and computational costs to incorporate Q into 2-D time-domain first-order velocity-stresswave equations. To improve the computational efficiency, we limit the Q in the model to a list of discrete values between 2 and 1000. The related stress and strain relaxation times that characterize the viscoelastic model are precalculated and stored in a database for use by the finite-difference calculation. A viscoelastic finite-difference scheme that is second order in time and fourth order in space is developed based on the MacCormack algorithm. The newmethod is validated by comparing the numerical result with analytical solutions that are calculated using the generalized reflection/transmission coefficient method. The synthetic seismograms exhibit greater than 95 per cent consistency in a two-layer viscoelastic model. The dispersion generated from the simulation is consistent with the Kolsky-Futterman dispersion relationship. [ABSTRACT FROM AUTHOR]

Seismology plays an important role in characterizing potential underground nuclear tests. Using broad-band digital seismic data from Northeast China, South Korea and Japan, we investigated the properties of the recent seismic event occurred in North Korea on 2016 January 6. Using a relative location method and choosing the previous 2006 explosion as the master event, the 2016 event was located within the North Korean nuclear test site, with its epicentre at latitude 41.3003°N and longitude 129.0678°E, approximately 900 m north and 500mwest of the previous event on 2013 February 12. Based on the error ellipse, the relocation uncertainty was approximately 70 m. Using the P/S spectral ratios, including Pg/Lg, Pn/Lg and Pn/Sn, as the discriminants, we identify the 2016 event as an explosion rather than an earthquake. The body-wave magnitude calculated from regional wave Lg is mb(Lg) equal to 4.7 ± 0.2. Adopting an empirical magnitude-yield relation, and assuming that the explosion is fully coupled and detonated at a normally scaled depth, we find that the seismic yield is about 4 kt, with the uncertainties allowing a range from 2 to 8 kt. [ABSTRACT FROM AUTHOR]

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Dit of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO2 or Al2O3 dielectric layers. [ABSTRACT FROM AUTHOR]

Various biaxial compressive strained GaSb p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm2/V·s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain. Meanwhile, first principles calculations show that the hole effective mass of GaSb depends on the biaxial compressive strain. The biaxial compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands. [ABSTRACT FROM AUTHOR]

Surface passivation with acidic (NH4)2S solution is shown to be effective in improving the interfacial and electrical properties of HfO2/GaSb metal oxide semiconductor devices. Compared with control samples, the samples treated with acidic (NH4)2S solution show great improvements in gate leakage current, frequency dispersion, border trap density, and interface trap density. These improvements are attributed to the enhancing passivation of the substrates, according to analysis from the perspective of chemical mechanism, X-ray photoelectron spectroscopy, and high-resolution cross-sectional transmission electron microscopy. [ABSTRACT FROM AUTHOR]