1. Lateral spreading of focused ion-beam-induced damage.
- Author
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Bever, T., Jäger-Waldau, G., Eckberg, M., Heyen, E. T., Lage, H., Wieck, A. D., and Ploog, K.
- Subjects
ION implantation ,CATHODOLUMINESCENCE ,GALLIUM arsenide ,HETEROSTRUCTURES ,RAPID thermal processing - Abstract
Presents information on a study that examined the lateral spreading of implantation-induced damage. Position dependence of the cathodoluminescence intensity of gallium arsenide (GaAs)/aluminum arsenide heterostructures patterned by a focused gallium[sub+] ion beam. Measurement techniques to study the focused ion beams-induced damage; Dose dependence and the effect of rapid thermal annealing; Spatial dependence of the mobility of the two-dimensional electron gas at an AlGaAs/GaAs.
- Published
- 1992
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