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Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench, and double-trench architectures. The results were used to calculate the failure cross sections and the failure-in-time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between the drain and the gate, similar to what was previously observed with heavy ions, while the second exhibiting a complete gate rupture. The observed failure mechanisms and the postirradiation gate stress (PIGS) tests are discussed for different technologies. [ABSTRACT FROM AUTHOR]

The energy deposited by heavy-ion beams was measured using a passivated implanted planar silicon (PIPS) detector in different facilities. Ion beams at ultrahigh energy lead to the formation of a second, unexpected peak in the deposited energy spectrum at slightly higher energy, in addition to the expected primary peak. Monte Carlo simulations are used to shed light on the origin of this phenomenon and the underlying physical mechanisms. The importance of accounting for secondaries’ production in the packaging materials of the diode and the mechanisms at play are highlighted in the discussion of the results. [ABSTRACT FROM AUTHOR]

Fast neutron measurements have been performed with silicon and diamond detectors at nTOF, ChipIr, and CHARM facilities. The detectors have been used in pulse mode; the deposited energy and time stamp is measured event by event for each signal above threshold. The pulsed nature of the spallation sources gives high instantaneous counting rates that dictate the use of a fast electronic chain including a current preamplifier and digital acquisition. The energy-dependent response functions of these detectors to fast neutrons can be extracted from nTOF data using time-of-flight to provide energy tagging. These measured response functions can then be used both to benchmark Monte Carlo simulations of the response functions and to interpret the measurements at ChipIR and CHARM, facilities used for the irradiation of microelectronics, where time-of-flight energy measurement at these neutron energies is not possible. [ABSTRACT FROM AUTHOR]