1. InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologiesand optical properties.
- Author
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B L Liang, Zh M Wang, Yu I Mazur, V V Strelchuck, K Holmes, J H Lee, and G J Salamo
- Subjects
QUANTUM dots ,OPTICAL properties ,MOLECULAR beam epitaxy ,PHOTOLUMINESCENCE - Abstract
We systematically investigated the correlation between morphological and optical properties ofInGaAs self-assembled quantum dots (QDs) grown by solid-source molecular beam epitaxy on GaAs(n 11)B(n = 9, 8, 7, 5, 3, 2) substrates. Remarkably, all InGaAs QDs onGaAs(n 11)B under investigation show optical properties superior to those forones on GaAs(100) as regards the photoluminescence (PL) linewidthand intensity. The morphology for growth of InGaAs QDs on GaAs(n 11)B,where n = 9, 8, 7, 5, is observed to have a rounded shape with a higher degree of lateral ordering thanthat on GaAs(100). The optical property and the lateral ordering are best for QDs grownon a (511)B substrate surface, giving a strong correlation between lateral ordering and PLoptical quality. Our results demonstrate the potential for high quality InGaAs QDs onGaAs(n 11)B for optoelectronic applications. [ABSTRACT FROM AUTHOR]
- Published
- 2006
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