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The analytic potential model for symmetric double-gate MOSFETs is verified and calibrated with experimental n- and p-channel FinFET data over a wide range of gate lengths and bias regions. Quantum mechanical effects are incorporated in the model to reproduce the measured C--V characteristics. The long-channel mobility consists of both a phonon scattering term and a Coulomb scattering term with opposite field dependence. There is a slight mobility dependence on gate length due to the different strain effects in n- and p-channel FinFETs. The 2-D short-channel model has been validated in terms of the measured drain-induced barrier lowering (DIBL), threshold voltage rolloff, and subthreshold current slope of sub-100-nm n- and p-channel FinFETs. [ABSTRACT FROM AUTHOR]

This brief presents an analytical solution of the electrostatic potential for nanowire MOSFETs in the subthreshold region by solving Poisson's equation in two dimensions (2-D) in both semiconductor and gate insulator regions under cylindrical coordinates. Combining the analytical solution with the current continuity equation, one can derive an expression for the subthreshold current, from which the important parameters for short-channel effects (SCEs), such as threshold voltage rolloff, drain-induced barrier lowering, and subthreshold slope degradation, are analytically extracted. The 2-D analytical model for SCEs has been validated by the numerical simulation results. [ABSTRACT FROM AUTHOR]

This brief reports the experimentally measured strain effect on electron and hole transport in (110)-oriented FinFETs. To separate out the series-resistance component, the low drain-bias resistance is differentiated with respect to the gate voltage. It is found that the hole mobility is enhanced while the electron mobility reduced toward short-channel devices. This effect is attributed to the gate-length-dependent strain in FinFET device structures. [ABSTRACT FROM AUTHOR]

In this paper, a unified analytic drain—current model is presented for various kinds of multiple-gate (MG) MOSFETs, including quadruple-gate (QG), triple-gate (TG), Π-gate, and Ω-gate MOSFETs. The basis of the unified model lies in the analytic potential models previously developed for highly symmetric double-gate (DG) and surrounding-gate (SG) MOSFETs. A common characteristic for all MG MOSFETs is that the inversion charge in subthreshold is proportional to the silicon cross-sectional area (volume inversion), whereas the inversion charge above threshold is proportional to the gated perimeter of the silicon body. It is shown that the inversion charge in a QG MOSFET can be modeled by multiplying the inversion charge of SG MOSFET by a function that changes smoothly from unity in subthreshold to a factor larger than unity above threshold. Inasmuch as the inversion charge is expressed as a function of the gate voltage, the drain—current can be evaluated by using the Pao—Sah integral approach. Once the QG model is obtained, other TG, Π-gate, and Ω-gate MOSFET models can be formulated as a linear combination of DG and QG MOSFETs. Numerical simulation results that validate the unified model are presented. [ABSTRACT FROM AUTHOR]