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In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapour deposition (MOCVD). Diethyl zinc (DEZn), 02 and N20 are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction (XRD), Hall measurements and electron probe microanalysis (EPMA). Experimental results demonstrate that ZnO films deposited at 600°C and 73 Pa display a fine electrical quality and ZnIO atomic ratio plays an important role in the electrical property of ZnO films. [ABSTRACT FROM AUTHOR]

Zn1− x Mg x O films were deposited on single crystal Si (100) substrates using ultrasonic spray pyrolysis under ambient atmosphere. A strong ultraviolet near-band-edge (NBE) emission was observed in the room temperature photoluminescence (PL) measurement for all the as-grown Zn1− x Mg x O films, while the deep-level emission was almost undetectable, suggesting that the obtained Zn1− x Mg x O-based films are well close to stoichiometry and of optically high quality. A distinct blue-shift of NBE emission peak from 386 nm to 358 nm was observed as the Mg concentration increases from 0% to 25 %. The photoluminescence spectra as a function of temperature were also investigated to examine the emission mechanism of Zn1− x Mg x O films. [ABSTRACT FROM AUTHOR]

The well-aligned ZnO nano-arrays/rods synthesized by a chemical bath deposition method on a highly conductive Si substrate were chemically etched in an ammonia chloride aqueous solution. An obvious end shape modification of ZnO nano-arrays/rods was realized in this report. The hexagonal frustum end of ZnO nano-arrays/rods changed into a pyramid and the diameter of ZnO nano-arrays/rods decreased gradually with the increasing etching time. The evolution mechanism of the wet etching process was discussed based on a proposed evolution model. Photoluminescence measurements indicated that the near band edge emissions of ZnO nano-arrays/rods increased greatly after wet etching. The controllable end shape modification of ZnO nano-arrays/rods on a highly conductive Si substrate by this simple wet etching technique will further explore the application of ZnO in field emission devices and 1D based nano-devices with various end shapes. [ABSTRACT FROM AUTHOR]