1. Enhancement and anisotropy of the Landau g factor in modulation-doped Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures.
- Author
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Zheng, Z.W., Shen, B., Gui, Y.S., Qiu, Z.J., Jiang, C.P., Tang, N., Liu, J., Chen, D.J., Zhou, H.M., zhang, R., Shi, Y., Zheng, Y.D., Guo, S.L., Chu, J.H., Hoshino, K., and Arakawa, Y.
- Subjects
MAGNETORESISTANCE ,ANISOTROPY ,LANDAU damping ,HETEROSTRUCTURES ,MATERIALS at low temperatures ,SHEAR waves - Abstract
Spin splitting of the two-dimentional electron gas (2DEG) in modulation-doped Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The spin splitting is observed in Shubnikov–de Haas oscillations at a magnetic field higher than 5.4 T and a temperature of 1.4 K. The effective g factor g[sup *] is enhanced due to the exchange interaction of the 2DEG at high densities. The ratio of the transverse effective g factor g[sub ⊥][sup *] and the longitudinal effective g factor g[sub ∥][sup *] is g[sub ⊥][sup *]/g[sub ∥][sup *]=2.6 indicating the large difference between g[sub ∥][sup *] and g[sub ⊥][sup *]. It is demonstrated that the anisotropy of the g[sup *] is due to the strong polarization-induced electric field at the heterointerface. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Published
- 2004
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