1. A comparative study of defect states in evaporated and selenized CIGS(S) solar cells.
- Author
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P. K. Johnson, J. T. Heath, J. D. Cohen, K. Ramanathan, and J. R. Sites
- Abstract
Current‐voltage, admittance spectroscopy, and drive‐level capacitance profiling measurements were taken on Cu(In1−xGax)(Se1−ySy)2 solar cell devices. The devices were made using two different types of absorbers. One set of absorbers was deposited via physical vapor deposition, while the other set of absorbers was made by selenization of metal precursors. Additionally, each type of absorber was completed with one of two different types of buffer treatments: a CdS layer or a cadmium partial electrolyte surface modification. The devices with the evaporated absorbers had larger values of VOC, higher carrier densities, lower densities of trapping defects, and likely shallower gap states. Results were qualitatively similar for the CdS and partial electrolyte buffers. Copyright © 2005 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]
- Published
- 2005
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