21 results on '"Ikeda, Shunsuke"'
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2. Demonstration of an intense lithium beam for forward-directed pulsed neutron generation.
3. Clinical and morphological characteristics of ruptured small (<5 mm) posterior communicating artery aneurysms.
4. Plasma instability inside solenoid with laser ion source.
5. Predictors of subacute hematoma expansion requiring surgical evacuation after initial conservative treatment in patients with acute subdural hematoma.
6. Neutron generator based on intense lithium beam driver.
7. Evaluation of magnetic field error in ExtendedEBIS.
8. Laser power density dependence on charge state distribution of Ta ion laser plasma.
9. Low charge state lithium beam production from chemical compounds with laser ion source.
10. Ion energy distributions from laser-generated plasmas at two different intensities.
11. A rare case of diploic venous anomaly: asymptomatic venous sac expanding in the diploe.
12. 'Papillary' solitary fibrous tumor/hemangiopericytoma with nuclear STAT6 expression and NAB2- STAT6 fusion.
13. Investigation of the Tail of a Fe Plasma Plume Passing Through Solenoidal Magnetic Field for a Laser Ion Source.
14. Ophthalmic artery arising from the anterior cerebral artery diagnosed by MR angiography.
15. Preliminary result of rapid solenoid for controlling heavy-ion beam parameters of laser ion source.
16. Branched fatty acids inhibit the biosynthesis of menaquinone in Helicobacter pylori.
17. High drain current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with shrinkage of channel length by InP anisotropic etching.
18. High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa.
19. Erratum: “InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm”.
20. InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm.
21. Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source.
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