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The growth behavior of pure and Sr included HfO2 composite thin films for different concentrations of Sr (5, 10, and 15 Wt%) through the Jet Nebulizer Spray Pyrolysis technique is discussed in detail. The preparation of Al/HfO2/n-Si and Al/Sr:HfO2/n-Si Schottky barrier diodes and their rectification behavior were compared. The appearance of intermediate (Sr2HfO4) and new (SrO2) phases upon introduction of Sr in HfO2 was recorded through XRD analysis, and particle size enlargement was observed. The absorption coefficients and bandgap energies of pure and Sr included HfO2 films were determined using UV-VIS analysis, and the results imply that the presence of Sr2HfO4 in Sr:HfO2 increases the overall bandgap from 3.8 to 4.0 eV. The morphology of pure HfO2 was heavily influenced by the presence of Sr; FESEM micrographs revealed that the self-assembled sphere like structure of HfO2 turned into mixed morphology like the rod shape of SrO2 and the contorted spheres of Sr2HfO4. EDAX elementary studies have confirmed the presence and percentage changes of Sr, Hf, and O in pure and Sr included composites thin films. The XPS spectrum has confirmed Sr in SrO2 and Sr2HfO4 phases, and its oxidation states in different phases were verified using short XPS scans. The I–V curves of pure (Al/HfO2/n-Si) and Sr:HfO2 composite (Al/Sr–HfO2/n-Si) diodes were studied and compared. The 15% Sr included HfO2 showed higher rectification behavior when compared with pure Al/HfO2/n-Si and composited (5 and 10%) Al/Sr–HfO2/n-Si at room temperature. [ABSTRACT FROM AUTHOR]

In this work, we have successfully prepared the nano-coral to be intact with the mesoporous of Sn-HfO2 thin films through the (jet nebulizer spray pyrolysis) JNSP technique from different Sn (5, 10, 15 Wt.%) to improve the MIS Schottky diode Al/Sn-HfO2/n-Si. To achieve the phase transformations (monoclinic to orthorhombic) in pure hafnium oxide thin films, we have added the Sn ions as the composite at optimized temperature 600 °C. The XRD characteristic used to determine the structural parameters such as the phase, grain size for pure HfO2, and composite Sn-HfO2 films. The mesoporous with irregularly shaped balls and nano coral-like morphology have been observed through FESEM images. The absorption coefficients and bandgap energy have been determined from the UV Vis spectrum. The EDAX elementary analysis has confirmed the presence of Sn, Hf, O elements in each film. The XPS spectrum has confirmed Sn's presence and binding peak with a spin-orbit on the films' surface. I-V curves of forward and reverse bias determine the barrier height, ideality factor, and saturation currents from the thermionic emission theory. All the Al/Sn@HfO2/n-Si diode parameters are strongly improved after the incorporation of Sn ions. [ABSTRACT FROM AUTHOR]