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The achievement of the low Gilbert damping parameter in spin dynamic modulation is attractive for spintronic devices with low energy consumption and high speed. Metallic ferromagnetic alloy Co-Fe-B is a possible candidate due to its high compatibility with spintronic technologies. Here, we report thickness-dependent damping and soft magnetism in Co-Fe-B films sandwiched between two non-magnetic layers with Co-Fe-B films up to 50 nm thick. A non-monotonic variation of Co-Fe-B film damping with thickness is observed, which is in contrast to previously reported monotonic trends. The minimum damping and the corresponding Co-Fe-B thickness vary significantly among the different non-magnetic layer series, indicating that the structure selection significantly alters the relative contributions of various damping mechanisms. Thus, we developed a quantitative method to distinguish intrinsic from extrinsic damping via ferromagnetic resonance measurements of thickness-dependent damping rather than the traditional numerical calculation method. By separating extrinsic and intrinsic damping, each mechanism affecting the total damping of Co-Fe-B films in sandwich structures is analyzed in detail. Our findings have revealed that the thickness-dependent damping measurement is an effective tool for quantitatively investigating different damping mechanisms. This investigation provides an understanding of underlying mechanisms and opens up avenues for achieving low damping in Co-Fe-B alloy film, which is beneficial for the applications in spintronic devices design and optimization. [ABSTRACT FROM AUTHOR]

In this paper, we design a multifunctional micro-nano device with a hybrid metamaterial-waveguide system, which leads to a triple plasmon-induced transparency (PIT). The formation mechanisms of the three transparent peaks have their own unique characteristics. First, PIT-I can be switched into the BIC (Friedrich–Wintge bound state in continuum), and the quality factors (Q-factors) of the transparency window of PIT-I are increased during the process. Second, PIT-II comes from near-field coupling between two bright modes. Third, PIT-III is generated by the near-field coupling between a low-Q broadband bright mode and a high-Q narrowband guide mode, which also has a high-Q transparent window due to the guide mode. The triple-PIT described above can be dynamically tuned by the gate voltage of the graphene, particularly for the dynamic tuning of the Q values of PIT-I and PIT-III. Based on the high Q value of the transparent window, our proposed structure can be used for highly sensitive refractive index sensors or devices with prominent slow light effects. [ABSTRACT FROM AUTHOR]

Plasmonic resonators have drawn more attention due to the ability to confine light into subwavelength scale. However, they always suffer from a low-quality (Q) factor owing to the intrinsic loss of metal. Here, we numerically propose a plasmonic resonator with ultra-high Q factor based on plasmonic metal–insulator-metal (MIM) waveguide structures. The resonator consists of a disk cavity surrounded by a concentric ring cavity, possessing an ultra-small volume. Arising from the plasmon hybridization between plasmon modes in the disk and ring cavity, the induced bonding hybridized modes have an ultra-narrow full width at half maximum (FWHM) as well as ultra-high Q factors. The FWHM can be nearly 1 nm and Q factor can be more than 400. Furthermore, such a device can act as a refractive index sensor with an ultra-high figure of merit (FOM). This work provides a novel approach to design plasmonic high-Q-factor resonators and has potential on-chip applications such as filters, multi-spectral sensors and nanolasers. [ABSTRACT FROM AUTHOR]

A mid-infrared (mid-IR) dual-band filter with ultra-high resolving power is designed and numerically investigated. It is composed of an Al2O3 layer between a gold grating and a CaF2 substrate. Each unit cell of the grating consists of two gold strips with different heights. The filter provides two high-extinction ultra-narrow stop bands. One is at a wavelength of ∼3.8392 μm with a full-width at half-maximum (FWHM) of ∼0.8 nm, and the other is at a wavelength of ∼3.8435 μm with a FWHM of ∼1.8 nm. The resolving power of the filter is >2100. The two stop bands result from the (+1) and (−1) waveguide modes, respectively. An interaction between the two resonance modes exists and affects the stop bands. We can control the interaction by adjusting the grating parameters, thus designing the FWHMs and lineshapes of the two stop bands flexibly. [ABSTRACT FROM AUTHOR]

A dual narrowband absorber operating at mid-infrared (mid-IR) frequencies was numerically investigated. The structure consists of a fine-structured silicon grating on a gold film. Each unit cell of the fine-structured silicon grating is composed of two different silicon bars. When illuminated by a transverse-magnetic (TM) polarized plane wave, the absorber will create two absorption bands. At normal incidence, the two absorption bands have respective peak wavelengths of ∼3.864 µm and ∼3.994 µm, and respective bandwidths of ∼28 nm and ∼36 nm. The level of absorption can be higher than 0.998. It is shown that the two absorption bands are related to different silicon bars in each unit cell. Moreover, the physical origin of the two absorption bands is attributed to the different surface-plasmon-polariton (SPP) modes excited in the absorber. [ABSTRACT FROM AUTHOR]

We numerically propose plasmon-induced transparency (PIT) and the slow light effect based on a terahertz (THz) chipscale plasmonic semiconductor-insulator-semiconductor waveguide system. Via the coupling between two stub resonators, PIT is introduced due to the destructive interference, which can be theoretically described by the transmission-line method. Meanwhile, the strong dispersion within the transparent window will lead to the slow light effect. Via tuning the geometric parameters, the profile of PIT as well as group delay line can be arbitrarily tailored. Moreover, active control of both PIT and slow light can be realized by changing the ambient temperature. Especially, by integrating monolayer graphene into the structure, PIT and slow light can also be electrically modulated via applying voltage. This work provides geometrical, thermal and electrical approaches to manipulate THz transmission and group delay in the subwavelength scale, and can find potential applications as filters, sensors, modulators and active optical delay lines in THz ultracompact circuits. [ABSTRACT FROM AUTHOR]

Plasmonic nanocircuits can deliver light in subwavelength scale, however, require state-of-the-art fabrication process due to the ultra-small footprints. Here, we introduce direct coupling strategy based on metal-insulator-metal (MIM) waveguide systems to reduce the system loss as well as the fabrication difficulty and increase the structural stability. Following this strategy, the coupling between the input waveguide and square ring resonator (SRR) can be realized via an aperture, and for the coupling between SRRs, the metal gap can be removed. The numerical results show that such direct coupling can produce similar effects with conventional indirect coupling in MIM waveguide systems, and the physics mechanism behind as well as influences of geometric parameters on transmission spectrum is also investigated. This work provides a simpler approach to realize on-chip plasmonic nanodevices, such as filters, sensors, and optical delay lines, in practice. [ABSTRACT FROM AUTHOR]

The realization of the electromagnetically induced transparency (EIT) effect based on guided-mode resonance (GMR) has attracted a lot of attention. However, achieving the multispectral EIT effect in this way has not been studied. Here, we numerically realize a double EIT-ike effect with extremely high Q factors based on a GMR system with the double-bar dielectric grating structure, and the Q factors can reach 35,104 and 24,423, respectively. Moreover, the resonance wavelengths of the two EIT peaks can be flexibly controlled by changing the corresponding structural parameters. The figure of merit (FOM) of the dual-mode refractive index sensor based on this system can reach 571.88 and 587.42, respectively. Our work provides a novel method to achieve double EIT-like effects, which can be applied to the dual mode sensor, dual channel slow light and so on. [ABSTRACT FROM AUTHOR]

We investigate the active control of electromagnetically induced transparency (EIT) analogue based on terahertz (THz) metamaterials integrated with vanadium oxide(VO2). Due to the insulator-to-metal transition of VO2, the amplitude of EIT peak can be actively modulated with significant modulation depth. Meanwhile the group delay within the transparent window can also be dynamically tuned, bringing the active control of slow light effect. Furthermore, we also introduce independently tunable transparent peaks based on double-peak EIT, and the group delay within each transparent window can also be independently controlled. Finally, based on broadband EIT, the active tuning toward quality factor of EIT is also realized. This work introduces active EIT control with multiple degree of freedom by employing VO2, and can find potential applications in future wireless THz communication systems as multi-channel filters, switches, spacers, logic gates and modulators. [ABSTRACT FROM AUTHOR]

Adiabatic waveguide taper and on-chip wavelength demultiplexer are the key components of photonic integrated circuits. However, these two kinds of devices which were designed by the traditional semi-analytic methods or the brute-force search methods usually have large size. Here, based on the regularized digital metamaterials, a two-channel focused wavelength demultiplexer with a footprint of 2.4 × 10 μm2 has been proposed. The designed demultiplexer can directly connect to a grating coupler under the absence of a long adiabatic waveguide taper. The objective first method and the modified steepest descent method are used to design the demultiplexer which splits 1520 nm and 1580 nm light. Experimental results show that the insertion loss of the upper (lower) channel of the demultiplexer is −1.77 dB (−2.10 dB) and the crosstalk is −25.17 dB (−12.14 dB). Besides, the simulation results indicate that the fabrication tolerance of the device can reach ±20 nm in etching depth and ±10 nm in plane size changing. Benefitted from the extensibility of the design method, other types of ultra-compact "focused" devices, like mode splitters, mode converters, and power splitters can also be designed. Most importantly, this design method can be used to design devices with more complicated functionalities, such as multi-channel focused wavelength demultiplexers. [ABSTRACT FROM AUTHOR]

A subwavelength fine-structured silicon–gold metagrating was designed for realizing mid-infrared (mid-IR) narrowband absorbers. The metagrating consisted of a silicon grating on the stack of a gold film and a quartz substrate. The silicon grating consisted of two periodically arranged silicon strips in each unit cell. The numerical results reveal that perfect absorption of the traverse-magnetic (TM) polarized light at a wavelength of 4.071 μm can be achieved, with an absorption rate of ~99.2% and an absorption full-width at half-maximum (FWHM) bandwidth of ~31 nm. Thus, the proposed structure is useful for the spectral control of mid-IR signals. When used as a refractive index sensor, the structure has a measuring range of 1.0–2.0 with a quasi linear response, with a figure of merit (FOM) of ~103. [ABSTRACT FROM AUTHOR]

La0.625Ca0.375MnO3 (LCMO) films with thicknesses between 7 and 54 nm were epitaxially grown on (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) [LSAT (001)] substrates by using pulsed laser deposition. For this epitaxial system, antiferromagnetic-insulator (AFI) state can be controlled by changing the film thickness and annealing time with various epitaxial strain states, although this phenomenon is absent in the relatively thick films or bulk samples. The consistency between magnetization and resistivity data suggests all these interesting transport behaviors are attributed to the fluctuation of AFI volume fractions and their instability. Especially, there are huge low-field magnetoresistance over -54% (32 nm) at 0.1 T and enhanced magnetoresistance over a broad temperature range. Based on these above results, annealing induced coherent evolutions of biaxial strain and AFI phase in LCMO epitaxial films is a consequence of the strain-driven orbital ordered state, and this may make an approach for a possible application of strongly correlated electron devices. [ABSTRACT FROM AUTHOR]

La0.625Ca0.375MnO3 films have been epitaxially grown on the (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) substrates at different oxygen pressures and show varying tetragonal distortion. Results indicate a tendency that larger tetragonal distortion can stabilize the antiferromagnetic-insulator phase in the thin films. Colossal magnetoresistance (CMR) and anisotropic magnetoresistance (AMR) have been greatly enhanced only in the strained films over a broad temperature, probably responding to the anisotropic fluctuation of the nanoscale orientation-ordered patterns near the temperature of the phase separation region or metal-insulator transition. Hence, the inhomogeneous phase competition may contribute to the CMR and the extraordinary AMR effect for manganite devices. [ABSTRACT FROM AUTHOR]

A ring resonator is a basic component of traditional photonic integrated circuits (PIC), which has been, however, found difficult to be applied efficiently in high-compact plasmonic metal-insulator-metal (MIM) systems. Here, based on a plasmonic band-stop filter with a square ring resonator (SRR), a novel side-coupling method is introduced both numerically and theoretically to achieve a drop in the resonant wavelength in the SRR with considerable efficiency. By introducing the reflector structure, the performance can be appreciably improved. Besides, this structure also has potential for sensing and switching. Finally, a dual demultiplexer based on SRRs is realized at telecommunication wavelengths with comparable performance, which makes it possible to apply ring resonators in on-chip plasmonic wavelength division multiplex (WDM) networks. This work is valuable for PIC design, and will promote the on-chip plasmonic system progress. [ABSTRACT FROM AUTHOR]

A plasmonic refractive index (RI) sensor based on metal-insulator-metal (MIM) waveguide coupled with concentric double rings resonator (CDRR) is proposed and investigated numerically. Utilizing the novel supermodes of the CDRR, the FWHM of the resonant wavelength can be modulated, and a sensitivity of 1060 nm/RIU with high figure of merit (FOM) 203.8 is realized in the near-infrared region. The unordinary modes, as well as the influence of structure parameters on the sensing performance, are also discussed. Such plasmonic sensor with simple framework and high optical resolution could be applied to on-chip sensing systems and integrated optical circuits. Besides, the special cases of bio-sensing and triple rings are also discussed. [ABSTRACT FROM AUTHOR]

We study that the different-mode (waveguide-connected) power splitter [(W)PS] can provide different-mode testing points for the optical testing. With the PS or WPS providing two different-mode testing points, the measured insertion losses (ILs) of the three-channel and dual-mode waveguide crossing (WC) for both the fundamental transverse electric (TE0) and TE1 modes are less than 1.8 dB or 1.9 dB from 1540 nm to 1560 nm. At the same time, the crosstalks (CTs) are lower than −17.4 dB or −18.2 dB. The consistent test results indicate the accuracy of the (W)PS-based testing circuit. Additionally, combining the tunable tap couplers, the (W)PS can provide multiple testing points with different modes and different transmittances. [ABSTRACT FROM AUTHOR]

In recent years, the achievement of the electromagnetically induced transparency (EIT) effect based on the guided-mode resonance (GMR) effect has attracted extensive attention. However, few works have achieved a double EIT-like effect using this method. In this paper, we numerically achieve a double EIT-like effect in a GMR system with a three-layer silicon nitride waveguide grating structure (WGS), using the multi-level atomic system model for theoretical explanation. In terms of slow light performance, the corresponding two delay times reach 22.59 ps and 8.43 ps, respectively. We also investigate the influence of wavelength detuning of different GMR modes on the transparent window and slow light performance. Furthermore, a wide-band flat-top transparent window was also achieved by appropriately adjusting the wavelength detuning between GMR modes. These results indicate that the EIT-like effect in the WGS has potential application prospects in low-loss slow optical devices, optical sensing, and optical communications. [ABSTRACT FROM AUTHOR]

As a plasmonic analogue of electromagnetically induced transparency (EIT), plasmon-induced transparency (PIT) has drawn more attention due to its potential of realizing on-chip sensing, slow light and nonlinear effect enhancement. However, the performance of a plasmonic system is always limited by the metal ohmic loss. Here, we numerically report a PIT system with gain materials based on plasmonic metal-insulator-metal waveguide. The corresponding phenomenon can be theoretically analyzed by coupled mode theory (CMT). After filling gain material into a disk cavity, the system intrinsic loss can be compensated by external pump beam, and the PIT can be greatly fueled to achieve a dramatic enhancement of slow light performance. Finally, a double-channel enhanced slow light is introduced by adding a second gain disk cavity. This work paves way for a potential new high-performance slow light device, which can have significant applications for high-compact plasmonic circuits and optical communication. [ABSTRACT FROM AUTHOR]