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Hole-based spin qubits in strained planar germanium quantum wells have received considerable attention due to their favorable properties and remarkable experimental progress. The sizeable spin-orbit interaction in this structure allows for efficient qubit operations with electric fields. However, it also couples the qubit to electrical noise. In this work, we perform simulations of a heterostructure hosting these hole spin qubits. We solve the effective mass equations for a realistic heterostructure, provide a set of analytical basis wavefunctions, and compute the effective g-factor of the heavy-hole ground state. Our investigations reveal a strong impact of highly excited light-hole states located outside the quantum well on the g-factor. We find that sweet spots, points of operations that are least susceptible to charge noise, for out-of-plane magnetic fields are shifted to impractically large electric fields. However, for magnetic fields close to in-plane alignment, partial sweet spots at low electric fields are recovered. Furthermore, sweet spots with respect to multiple fluctuating charge traps can be found under certain circumstances for different magnetic field alignments. This work will be helpful in understanding and improving the coherence of germanium hole spin qubits. [ABSTRACT FROM AUTHOR]

A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate microscopy has been proposed as a method to measure the spatial variation of the valley splitting as a tip-induced dot is moved around in the plane of the Si quantum well. We develop a simulation using an electrostatic model of the scanning gate microscope tip and the overlapping gate structure combined with an approximate solution to the three-dimensional Schrödinger–Poisson equation in the device stack. Using this simulation, we show that a tip-induced quantum dot formed near the source and drain electrodes can be adiabatically moved to a region far from the gate electrodes. We argue that by spatially translating the tip-induced dot across a defect in the Si/SiGe interface, changes in valley splitting can be detected. [ABSTRACT FROM AUTHOR]

In this paper, we present a computational procedure that utilizes real-space grids to obtain high precision approximations of electrostatically confined few-electron states such as those that arise in gated semiconductor quantum dots. We use the full configuration interaction method with a continuously adapted orthonormal orbital basis to approximate the ground and excited states of such systems. We also introduce a benchmark problem based on a realistic analytical electrostatic potential for quantum dot devices. We show that our approach leads to highly precise computed energies and energy differences over a wide range of model parameters. The analytic definition of the benchmark allows for a collection of tests that are easily replicated, thus facilitating comparisons with other computational approaches. [ABSTRACT FROM AUTHOR]

Gate-tunable high-mobility InSb/In1-xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm²/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K. [ABSTRACT FROM AUTHOR]

This paper describes a solid state system in which a qubit is realized as the spin of a single trapped electron in a quantum dot and read functionality is via an adjacent quantum wire with a single or a small number of conductive states. Because of the limited design window for this system, simulation is an important guide to an experimental search for successful designs. We use a semianalytic approximation that is accurate enough to provide meaningful results and computationally simple enough to allow high throughput, as needed for design and optimization. In particular, we find designs that achieve double pinchoff (i.e., a single trapped electron in the dot and a single conductive state in the wire). After relaxing the design requirements to allow for a small number of conductive states in the wire, we find successful designs that are optimally robust, in the sense that their success is unlikely to be affected by fabrication errors. [ABSTRACT FROM AUTHOR]