1. A 0.18-µm 3.0-V 64-Mb Nonvolatile Phase-Transition Random Access Memory (PRAM).
- Author
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Woo Yeong Cho, Beak-Hyung Cho, Byung-Gil Choi, Hyung-Rok Oh, Sangbeom Kang, Ki-Sung Kim, Kyung-Hee Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Youngnam Hwang, SuJin Ahn, Gwan-Hyeob Koh, Gitae Jeong, Hongsik Jeong, and Kinam Kim
- Subjects
RANDOM access memory ,COMPUTER storage devices ,COMPLEMENTARY metal oxide semiconductors ,DIGITAL electronics ,LOGIC circuits - Abstract
A nonvolatile 64-Mb 1T1R phase-transition random access memory (PRAM) has been developed by fully integrating chalcogenied storage material (GST: Ge
2 Sb2 Te5 ) into 0.18-µm CMOS technology. To optimize SET/RESET distribution, 512-kb sub-array core architecture was proposed, featuring meshed ground line and separated SET/RESET control schemes. Random read access time, random SET and RESET write access times were measured to be 60 ns, 120 ns, and 50 ns, respectively, at 3.0-V supply voltage with 30°C. [ABSTRACT FROM AUTHOR]- Published
- 2005
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