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1. Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness.

2. Perturbation and coupling of microcavity plasmas through charge injected into an intervening microchannel.

3. Interruption of electronically excited Xe dimer formation by the photoassociation of Xe(6s[3/2]2)-Xe(5p6 1S0) thermal collision pairs.

4. Fluorophore-gold nanoparticle FRET/plasmonic lasers with the streptavidin-biotin complex as the acceptor–donor linkage.

5. Interference between atomic Rb (5d5/2–5p3/2) and (5p3/2–5s1/2) coherences: observation of an exceptional point by quantum beating at ∼2.1 THz.

6. Xe2 gerade Rydberg states observed in the afterglow of a microplasma by laser spectroscopy of a³Σu+(1u,Ou-) absorption in the green (545-555 nm) and near-infrared (675-800 nm).

7. Enhancement of Raman scattering for an atom or molecule near a metal nanocylinder: Quantum theory of spontaneous emission and coupling to surface plasmon modes.

8. Autoionization in I and I[sub 2] observed by multiphoton ionization and photoelectron spectroscopy: Two atomic iodine Rydberg series built on the ...5s[sup 2]5p[sup 4] [sup 3]P[sub 1] ion core and revised value for the I[sup +]([sup 3]P[sub 1]) limit.

9. Intracavity, laser absorption spectroscopy of Ar2: Aπu5p and Aσu5p Rydberg states.

10. Absorption spectrum of Kr2F(4 2Γ) in the near ultraviolet and visible (335≤λ≤600 nm): Comparison with Kr+2(1( 1/2 )u) measurements.

11. Br2 ion pair state formation by electron beam excitation.

12. Absolute photoionization cross sections for Kr(5s) and Kr2 5s 3Σ+u (1u, 0-u) excited states at 248 nm.

13. Excited state, charge transfer absorption spectrum of HgBr in the blue (λ∼447 nm).

14. Excitation spectra of the np 3Πg, n′p 3Σ+g ←5s 3Σ+u(1u,0-u) Rydberg series of Kr2.

15. Gerade Rydberg states and ns 3Σ+u(1u,0-u) photoionization spectra of the rare gas dimers (n=2–6).

16. Observation of ns 3Σ+u(1u, 0-u)→mp 3Πg Rydberg transitions of Ar2 (n=4; 5≤m≤15) and Kr2(n=5; 6≤m≤16) in absorption.

17. Absorption of electronically excited Xe2Cl in the ultraviolet.

18. KXe excimer absorption and S → D, S → F collision induced satellites in K–Xe mixtures.

19. Origin of the 454 nm bound→free absorption band of cadmium monoiodide (114CdI).

23. Laser excitation spectroscopy of the B 1Σ+u(O+u)←a 3Πg(O+g) transition of Cd2: Vibrational analysis and rotational structure.

24. Vibrational wave packets in the C 1Πu state of Cs2: Two color pump–probe experiments.

25. Photoabsorption of Kr+2 in the ultraviolet: Revisited.

26. Rotational analysis of the 7pσ 3Σ+g←a3Σ+u system of the Ar2 molecule.

27. Photoelectron spectroscopy of the multiphoton ionization and above threshold ionization of HI at 532 and 355 nm.

28. Photoassociation of Kr–F collision pairs in the ultraviolet.

29. Rydberg states of the Kr2 molecule.

30. Excitation spectra for the photoassociation of Kr–F and Xe–I collision pairs in the ultraviolet (208–258 nm).

31. Rydberg states of the Ar2 molecule.

35. Discharge-excited free jet source of rare gas-halide and oxide molecules.

36. Ultraviolet laser-assisted metalorganic chemical vapor deposition of GaAs.

38. Activation energy and spectroscopy of the growth of germanium films by ultraviolet laser-assisted chemical vapor deposition.

40. Cs D2 line laser (852.1 nm) pumped by the photoassociation of Cs-Ar, Cs-Kr, and Cs-Xe collision pairs: Impact of rare gas partner on threshold and efficiency.

41. Ultraviolet emission intensity, visible luminance, and electrical characteristics of small arrays of Al/Al2O3 microcavity plasma devices operating in Ar/N2 or Ne at high-power loadings.

42. 25 W of average power at 172 nm in the vacuum ultraviolet from flat, efficient lamps driven by interlaced arrays of microcavity plasmas.

43. Multiphoton dissociation of GeH4: Ultraviolet emission spectrum of GeH.

49. Coupling quantum dots to optical fiber: Low pump threshold laser in the red with a near top hat beam profile.

50. Probing plasma–surface interactions with the transmission electron microscope or the Si–collector interface of the plasma bipolar junction transistor.

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