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Phonon diffraction and interference patterns are observed at the atomic scale, using molecular dynamics simulations in systems containing crystalline silicon and nanometric obstacles, such as voids or amorphous inclusions. The diffraction patterns due to these nano-architectured systems of the same scale as the phonon wavelengths are similar to the ones predicted by the simple Fresnel–Kirchhoff integral. The few differences between the two approaches are attributed to the nature of the interface and the anisotropy of crystalline silicon. Based on the wave description of phonons, these findings can provide insights into the interaction of phonons with nano-objects and can have applications in smart thermal energy management. [ABSTRACT FROM AUTHOR]

Amorphous titanium dioxide (a-TiO2) is widely used as a coating material in applications such as electrochemistry and self-cleaning surfaces where its interface with water has a central role. However, little is known about the structures of the a-TiO2 surface and aqueous interface, particularly at the microscopic level. In this work, we construct a model of the a-TiO2 surface via a cut-melt-and-quench procedure based on molecular dynamics simulations with deep neural network potentials (DPs) trained on density functional theory data. After interfacing the a-TiO2 surface with water, we investigate the structure and dynamics of the resulting system using a combination of DP-based molecular dynamics (DPMD) and ab initio molecular dynamics (AIMD) simulations. Both AIMD and DPMD simulations reveal that the distribution of water on the a-TiO2 surface lacks distinct layers normally found at the aqueous interface of crystalline TiO2, leading to an ∼10 times faster diffusion of water at the interface. Bridging hydroxyls (Ti2–ObH) resulting from water dissociation decay several times more slowly than terminal hydroxyls (Ti–OwH) due to fast Ti–OwH2 → Ti–OwH proton exchange events. These results provide a basis for a detailed understanding of the properties of a-TiO2 in electrochemical environments. Moreover, the procedure of generating the a-TiO2-interface employed here is generally applicable to studying the aqueous interfaces of amorphous metal oxides. [ABSTRACT FROM AUTHOR]

The degradation of microplastics in relation to marine pollution has been receiving increasing attention. Because the spherulites that comprise microplastics have a highly ordered lamellar structure, their decomposition is thought to involve a lamellar structure collapse process. However, even in the simplest case of an order–disorder transition between lamellae and melt upon heating, the microscopic details of the transition have yet to be elucidated. In particular, it is unclear whether nucleation occurs at defects in the crystalline portion or at the interface between the crystalline and amorphous portions. To observe the transition in molecular simulations, an approach that distinguishes between the crystalline and amorphous structures that make up the lamella is needed. Local order parameters (LOPs) are an attempt to define the degree of order on a particle-by-particle basis and have demonstrated the ability to precisely render complex order structure transitions during phase transitions. In this study, 274 LOPs were considered to classify the crystalline and amorphous structures of polymers. Supervised machine learning was used to automatically and systematically search for the parameters. The identified optimal LOP does not require macroscopic information such as the overall orientation direction of the lamella layers but can precisely distinguish the crystalline and amorphous portions of the lamella layers using only a small amount of neighboring particle information. [ABSTRACT FROM AUTHOR]

A major challenge with water splitting technology is to develop highly active and stable electrocatalysts for the oxygen evolution reaction (OER). IrO2 – based electrocatalysts are one of the most active electrocatalysts for proton exchange membrane (PEM) electrolysers, due to their excellent activity for the OER in acidic conditions. However, IrO2 often suffers from dissolution during electrolysis due to phase transitions into more soluble forms. Herein, a range of electrodeposited IrO2 films annealed to different temperatures of up to 500°C are prepared to understand the influence that crystalline/amorphous interfaces have on performance during accelerated degradation tests in concentrated acidic solutions. This study showed that an IrO2 film annealed at 300 °C exhibited the highest catalytic activity with a low overpotential of 150 mV at 10 mA cm−2, the smallest Tafel slope of 51 mV dec−1, with a less progressive decay in activity over a period of 8 h of accelerated degradation testing. This contrasts with both fully amorphous or more crystalline IrO2 films that decayed much more rapidly within 1 h of testing indicating the role that amorphous/crystalline regions have on OER performance. [ABSTRACT FROM AUTHOR]

Interface engineering shows distinct advantages in the electrocatalytic hydrogen evolution reaction (HER) due to the unique structures that can be realized. The interfaces formed by amorphous materials often exhibit special properties that are beneficial for the HER. Herein, an amorphous/crystalline Rh(OH)3/CoP heterostructure is constructed, which exhibits outstanding HER performance in the all‐pH range. It only needs the overpotentials of 13, 12, and 25 mV to drive a current density of 10 mA cm−2 in alkaline, acidic, and neutral media, respectively, which ranks as one of the best HER electrocatalysts reported recently. The outstanding HER activities in the all‐pH range are attributed to the unique amorphous/crystalline heterostructure of Rh(OH)3/CoP, which possesses special hydrophilic/aerophobic features thataccelerate mass transfer, and provide abundant exposed active sites and appropriate defects. Importantly, the performance attenuation mechanism of the catalyst is also revealed, i.e., the formation of Rh aggregations leads to poor contact and efficacy loss of the amorphous/crystalline interface for HER. In short, this work provides a new idea for using amorphous/crystalline heterostructure to design electrocatalysts, not only for the HER, but also for the oxygen reduction and oxygen evolution reactions. [ABSTRACT FROM AUTHOR]

The technological advances in wearable electronics and military stealth have spawned extensive research into electromagnetic wave absorbents. Despite the rapid progress in the geometrical modulation of magnetic absorbents, the engineering strategy of microwave-responsive magnetic domains is underdeveloped and the response dynamics remain unclear. Herein, a surface finite-sized atom reconstruction procedure is proposed to accurately modulate the local magnetic topological domains, dramatically enhancing the magnetic loss capacity. Due to the selectivity of atom reconstruction, vortex and stripe domains are controllably hybridized around the porous surface to broaden the interactive domain region, significantly intensifying energy absorption of the microwave field. Meanwhile, the amorphous/crystalline interfaces around atom reconstruction regions can induce interfacial polarization, enabling the optimization of dielectric loss capacity. Therefore, a satisfactory magnetic-dielectric synergy is realized to demonstrate the strong absorption intensity of-31.2 dB and the broad absorption bandwidth of 5.9 GHz. Furthermore, the surface-based magnetic domain transformation and microwave energy attenuation mechanisms are thoroughly revealed to break the black box of structure-function through electron holography and micromagnetic simulation. These achievements demonstrate a promising solution to improve high-frequency magnetic properties and provide a feasible route to interpret the structure-relevant magnetic loss capacity. [ABSTRACT FROM AUTHOR]

Conducting oxide interfaces have attracted considerable attention, motivated by both fundamental science and potential for oxide electronic devices. An important gap for maturing such device technology is scalability and routes to control the electronic properties, which can narrow the device engineering space. Here, we demonstrate and explain the mechanisms of highly tunable conductive oxide interfaces. We synthesized amorphous--crystalline Al2O3/SrTiO3 interfaces using the scalable and industry-compatible atomic layer deposition (ALD) technique. An NH3 plasma pretreatment is employed in the ALD chamber, and its duration is used as a tuning parameter for the electrical properties, where a span of three orders of magnitude in the sheet resistance is observed at room temperature. For the most conductive sample, our results are comparable to the highest carrier density values reported for all-crystalline oxide interfaces prepared with state-of-the-art epitaxial growth techniques, such as pulsed laser deposition. We pinpoint the origin of conductivity to oxygen vacancies caused by the SrTiO3 reduction by the NH3 plasma pretreatment. These results present a simple, scalable, and industry-compatible route for realizing conductive oxide interfaces, with a broad parameter space, offering a versatile and flexible toolkit for oxide device engineering. [ABSTRACT FROM AUTHOR]

The influence of uniaxial elastic strain of the Ni lattice on the intensity of mutual diffusion at a solid–liquid contact of Ni and Al has been studied by the molecular dynamics method. In all the cases under consideration, the intensity of diffusion has been found to increase and decrease upon extension and compression, respectively, which is related to a corresponding change in the free volume affecting to a great extent the diffusion mobility of atoms. It has been established that the intensity of mutual diffusion in the case of the (111) interface orientation relative to the Ni lattice is higher in comparison with the (001) orientation. This difference is explained by the different energies of Ni atoms in the aluminum phase and incorporated in the interface of crystalline nickel for both cases. [ABSTRACT FROM AUTHOR]

Nanofibrillated cellulose (NFC) consists of ultrafine cellulose structures in which the fibrils can have widths in the range from about 5 to 100 nm. NFC has been studied and developed in the paper industry, using bleached pulp from wood as the raw material. One of the issues in the application of NFC is their heat resistance to thermal degradation. The production process of NFC results in a decrease in their pyrolysis temperature during the nanofibrillation of bleached pulp; however, the details behind the reason and mechanisms are still unclear. In this study, NFC was prepared from bleached hardwood and softwood pulp by mechanical nanofibrillation using a grinder, and the pyrolysis behavior was investigated. For both bleached pulps, a decrease in the pyrolysis temperature was observed after nanofibrillation. The results suggest that the decrease in the pyrolysis temperature from nanofibrillation is not due to damage of the crystalline cellulose by nano fibrillation, but the damage of the hemicellulose components in the surface of the cellulose microfibrils or the interface between the crystalline cellulose and hemicellulose. If the hemicellulose on the surface of crystalline cellulose could be removed from the NFC, then the decrease in the pyrolysis temperature could be suppressed. [ABSTRACT FROM AUTHOR]

2H MoTe2 (molybdenum ditelluride) has generated significant interest because of its superconducting, nonvolatile memory, and semiconducting of new materials, and it has a large range of electrical properties. The combination of transition metal dichalcogenides (TMDCs) and two dimensional (2D) materials like hexagonal boron nitride (h-BN) in lateral heterostructures offers a unique platform for designing and engineering novel electronic devices. We report the fabrication of highly conductive interfaces in crystalline ionic liquid-gated (ILG) field-effect transistors (FETs) consisting of a few layers of MoTe2/h-BN heterojunctions. In our initial exploration of tellurium-based semiconducting TMDs, we directed our attention to MoTe2 crystals with thicknesses exceeding 12 nm. Our primary focus centered on investigating the transport characteristics and quantitatively assessing the surface interface heterostructure. Our transconductance (gm) measurements indicate that the very efficient carrier modulation with an ILG FET is two times larger than standard back gating, and it demonstrates unipolarity of the device. The ILG FET exhibited highly unipolar p-type behavior with a high on/off ratio, and it significantly increased the mobility in MoTe2/h-BN heterochannels, achieving improvement as one of the highest recorded mobility increments. Specifically, we observed hole and electron mobility values ranging from 345 cm2 V−1 s−1 to 285 cm2 V−1 s−1 at 80 K. We predict that our ability to observe the intrinsic, heterointerface conduction in the channels was due to a drastic reduction of the Schottky barriers, and electrostatic gating is suggested as a method for controlling the phase transitions in the few layers of TMDC FETs. Moreover, the simultaneous structural phase transitions throughout the sample, achieved through electrostatic doping control, presents new opportunities for developing phase change devices using atomically thin membranes. [ABSTRACT FROM AUTHOR]

Phase-Change Materials (PCMs) are widely applied in dynamic optical modulation due to the dramatic changes in their complex refractive index caused by temperature variation. As the functionality varies, the application of a single PCM cannot meet the compact, efficient and broadband needs of optical modulators. In this work, we combine vanadium dioxide (VO2) and a chalcogenide (Ge2Sb2Te5 (GST) or In3SbTe2 (IST)) to obtain a VO2–GST/IST multiple-stack film that is optimized by a genetic algorithm. This film has a wide spectrum and high modulation properties with three self-switchable modes varied by temperature, including transmission, absorption and reflection. The optimal results are an average normal transmittance, absorbance, and reflectance of 0.76, 0.91, 0.86 in 3–5 μm and 0.72, 0.90, 0.90 in 8–14 μm under different temperature ranges. The film enhances the transmission and absorption properties due to the formation of anti-reflective coating and Fabry–Perot resonance. Compared with GST, the film maintains high reflectance due to the metal-like interface reflection of crystalline IST, which exhibits metallic properties. For different polarization states, the film demonstrates great directional insensitivity when the incidence angles vary from 0° to 60°. The designed self-adaptive multistage infrared radiative thermo-optic modulator has promising implications for optical fuse, fiber-optic communication and energy storage fields. [ABSTRACT FROM AUTHOR]

During subduction, metamorphic dehydration reactions in the downgoing slab release fluids, generating fluid overpressure. It has been suggested that fluid is driven to flow upward by buoyancy, but a sufficiently high permeability allowing formation of a fluid percolation network is required. Traditionally, fluid percolation has been identified based on the textural equilibrium assumption by measuring the dihedral angle at the triple junction of grains. According to this theory, grain boundaries generally cannot be infiltrated by fluid, and only the grain edge can form a fluid flow channel. We argue that this theory is insufficient because we have found that water from fluid can be adsorbed into the crystalline interface, that is, a layered mineral interlayer, a crack, or a grain boundary. The high pressure in a subducting slab drives water adsorption into the crystalline interface, forming a low‐dimensional fluidic phase, and thus fluid percolation is achieved. Because water adsorbed in the interface is fluidic, water diffusion drives fluid transport in the subducting slab. Due to water adsorption, fluid overpressure at the dehydration front may release, so that dehydration embrittlement may be excluded. Stable water adsorption in the subduction‐slab conditions is determined here by combining molecular dynamics simulations and thermodynamic calculations. Analysis based on simulations shows that water adsorption requires crystalline surfaces which do not form hydrogen bonds well. Plain Language Summary: Fluids are released during dehydration reactions of hydrous minerals in downgoing slabs. As the density of fluid is smaller than that of rock, buoyancy drives the upward flow of the fluid. However, if fluid domains are isolated rather than well connected in porous rock, this fluid flow may be inhibited. The traditional textural equilibrium theory used to determine whether there is percolation of the fluid network excludes the infiltration of fluid into grain boundaries. However, here, we show that under high pressure, water from fluid can be adsorbed into a crystalline interface, forming a fluidic phase, and thus facilitating fluid percolation. The crystalline interface we study here is the interlayer of layered minerals, but in analogy, the understanding provided in this study can be generalized to other crystalline interfaces, for example, cracks or grain boundaries. If the crystalline surfaces do not form hydrogen bonds well, water adsorption can occur. Fluid migration in a slab is mediated by water within the crystalline interface. Water adsorption into crystalline interface may also play the role of transmitting earthquake‐triggering fluid overpressure, so that brittle failure may be excluded. Stable adsorption of water is identified here with a thermodynamic study based on atomic‐scale simulations. Key Points: Water from fluid can be adsorbed into crystalline interfaces under a high pressure, becoming a fluidic low‐dimensional phaseThis low‐dimensional phase facilitates fluid percolation and migration in a subducting slabWater adsorption into crystalline interface releases fluid overpressure, so that dehydration embrittlement may be excluded [ABSTRACT FROM AUTHOR]

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1−xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1−xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic–ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator. [ABSTRACT FROM AUTHOR]

The interfacial stiffness for nematic–smectic B (nm–smB) interface in a liquid crystalline (LC) material is calculated using Capillary Wave Theory (CWT) and molecular dynamics simulations. The Gay–Berne (GB) pair potential with parameters κ, κ′, μ, and ν equal to 3, 5, 2, and 1 is used to model the LC material. Using a smart three-step recipe, we have obtained an nm–smB phase coexistence in our simulations where the nm and smB directors are nearly parallel to each other and perpendicular to the interface normal. The density profiles are used to compute the nm–smB coexisting density range, the interfacial width, and its position. The smectic phase is differentiated from the nematic phase by using the local bond order parameter (q6q6), which has helped us to demonstrate that the interface is indeed rough. Finally, the interfacial stiffness of the nm–smB interface is computed by following the CWT analysis and is found to be γ ̃ n m − s m B = 0.398 61 k B T / σ e e 2 = 0.044 29 / σ s s 2 , where σee and σss are the length and diameter of the GB LC particles. [ABSTRACT FROM AUTHOR]

Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces. [ABSTRACT FROM AUTHOR]

The 5d two‐dimensional electron gas (2DEG) based on KTaO3 (KTO) exhibits a lot of exotic properties such as stronger spin‐orbit coupling (SOC) and higher superconductivity transition temperature than those of SrTiO3 (STO)‐based 3d 2DEGs, whereas it has much lower electron mobility. Herein, the property of the 5d 2DEGs is investigated including the carrier mobility and Rashba SOC by interfacing both amorphous and crystalline STO with the crystalline KTO. Metallic 2DEGs are achieved at both interfaces of amorphous and crystalline STO‐capped KTO. Notably, the amorphous STO/KTO heterointerface has a larger carrier concentration and higher Hall mobility than the crystalline STO/KTO counterparts at low temperatures, which stems from two kinds of carriers. In contrast, the 5d 2DEG formed at the crystalline interface exhibits much stronger Rashba SOC as revealed through magnetotransport measurement. The deduced maximum strength of Rashba SOC and spin‐splitting energy are ≈8.56 × 10−12 eV m and ≈33.52 meV, respectively. Our results provide new insights on designing on‐demand properties of KTO‐based conducting interfaces. [ABSTRACT FROM AUTHOR]

The oxide-semiconductor interface is a key element of MOS transistors, which are widely used in modern electronics. In silicon electronics, SiO2 is predominantly used. The miniaturization requirement raises a problem regarding the growing of heterostructures with ultrathin oxide layers. Two structural models of interface between crystalline Si and cristobalite SiO2 are studied by using DFT-based computer modelling. The structures of several Si/SiO2 superlattices (SL), with layer thicknesses varied within 0.5–2 nm, were optimized and tested for stability. It was found that in both models the silicon lattice conserves its quasi-cubic structure, whereas the oxide lattice is markedly deformed by rotations of the SiO4 tetrahedra around axes perpendicular to the interface plane. Based on the analysis of the calculated total energy of SLs with different thicknesses of the layers, an assessment of the interface formation energy was obtained. The formation energy is estimated to be approximately 3–5 eV per surface Si atom, which is close to the energies of various defects in silicon. Elastic strains in silicon layers are estimated at 5–10%, and their value rapidly decreases as the layer thickens. The elastic strains in the oxide layer vary widely, in a range of 1–15%, depending on the interface structure. [ABSTRACT FROM AUTHOR]

We investigate the magneto-optical (MO) polar Kerr enhancement of Fabry–Pérot cavities with perpendicular magnetic anisotropy for chemical and biological sensing applications. The MO cavities consist of stacked films with a half-mirrored surface layer, a dielectric interference layer, a total-reflection mirror, and a magnetic metal layer. Co80Pt20 and Al-doped ZnO (AZO) thin films were utilized as the magnetic and interference layers, respectively. The cavities produce two types of MO enhancement depending on the thickness of the magnetic layer. The sample with a thick magnetic layer as a total-reflection mirror generates a single peak in the polar Kerr spectrum. Contrarily, inserting a several-nanometer-thick CoPt layer into the AZO layer produces a resonant-type spectrum. Although both samples generate large MO enhancement factors (>50), the magnetic properties significantly differ. The AZO/CoPt/AZO interference layer controls the crystalline and interface conditions and produces a square-shaped out-of-plane hysteresis loop with a large Kerr rotation angle. Moreover, the use of an ultrathin CoPt film significantly reduces the saturation magnetization field. Thus, Fabry–Pérot cavities with a CoPt/AZO interference layer may serve as high-sensitivity, low-energy-consumption sensor elements. [ABSTRACT FROM AUTHOR]

We calculate the degree to which the final structure of the local groundstate in a liquid is a function of the strength of a perturbing potential applied during energy minimization. This structural susceptibility is shown to correlate well with the observed tendency of the liquid adjacent to a crystal interface to exhibit a crystalline groundstate, a feature that has been strongly linked to the observation of ultra-fast crystal growth in pure metals and ionic melts. It is shown that the structural susceptibility increases dramatically as the interaction potential between atoms is softened. [ABSTRACT FROM AUTHOR]

Spherulite-related space–charge electret properties of polypropylene (PP) have been widely discussed in the past decades. In the present paper, a less-common crystalline structure in PP—transcrystalline PP—is studied regarding its electret behavior in comparison with the typical spherulitic morphology. Polarized light microscopy and differential scanning calorimetry were employed to characterize the crystallite types and crystallinities of transcrystalline and spherulitic PP. Their electret functionality is investigated by means of thermally stimulated discharge experiments, where the cross-over phenomenon is observed on transcrystalline PP films, whereas surface-potential saturation and undercharging on the surface occur on the spherulitic samples. Besides, an asymmetrical behavior of positive and negative surface-charge stabilities is found on PP with spherulites, the negatively charged spherulitic surfaces show a better charge stability. It is shown that PP electrets are very sensitive to changes in the microscopic crystalline structures and their interfaces as well as in the molecular conformations controlled through adjustments of the respective processing steps. In addition, surface and bulk nanocomposites of PP or low-density polyethylene with inorganic particles are included in the comparison. In view of recent developments in the areas of PP-based electret-fiber filters and cellular-foam ferroelectrets, the observed changes in the charge-storage properties may have particular relevance, as the required film, fiber, or foam processing might significantly modify crystalline morphologies and nano-scale interfaces in PP electrets. Limitations in the charge-storage capabilities of interface structures may also be of interest in the context of high-voltage electrical-insulation materials where reduced space–charge accumulation and slightly increased charge transport can be advantageous. [ABSTRACT FROM AUTHOR]

OER (oxygen evolution reaction) is a critical reaction in several storage and conversion systems for renewable and clean electrochemical energies, including solar fuel devices, metal–air batteries, as well as regenerative fuel and water splitting cells. Regarding the shortcomings of OER, apart from the sluggish kinetics and high reaction overpotential, the reaction rate and overpotential are difficult to be optimized simultaneously. Herein, a novel hierarchical particle–sheet-structured Fe-doped NixP electrocatalyst is developed, which presents abundant interfaces between crystalline particle and amorphous sheet. The OER overpotential is reduced to 204 mV at 20 mA cm−2 current density, while it is reduced to 225 and 231 mV at 100 and 300 mA cm−2, respectively. The Fe-doped NixP electrocatalyst also shows fast reaction kinetics, whose Tafel slope is a remarkable 25 mV dec−1. For an electrolytic cell whose cathode and anode are Pt/C/NF and Fe–NixP/NF, respectively, a mere 1.446 V voltage is necessary to drive a 10 mA cm−2 current density for achieving overall water-splitting property. Notably, it also works stably at considerably high current densities of 500 and 1000 mA cm−2, representing high potential for commercial applications. [ABSTRACT FROM AUTHOR]

Crystallization processes of amorphous germanium–tin (GeSn) under low-energy electron-beam irradiation were examined using transmission electron microscopy (TEM). Freestanding amorphous GeSn thin films were irradiated with a 100 keV electron beam at room temperature. The amorphous GeSn was athermally crystallized by electron-beam irradiation, when the electron flux exceeded the critical value. Heterogeneous structures consisting of nano- and micro-crystallites were formed after crystallization of amorphous GeSn with ∼24 at. % Sn in the as-sputtered amorphous state. In situ TEM observations of structural changes under electron-beam irradiation revealed that random nucleation and growth of nanocrystallites occur at the early stage of crystallization, followed by rapid formation of micro-grains surrounding the nanocrystals. It has been suggested that the growth of micro-grains progresses via supercooled liquid Sn at the amorphous/crystalline interface. The resultant GeSn grains with a size of a few micrometers contained ∼15 at. % Sn, much larger than the solubility limit of Sn in Ge (∼1 at. % Sn). [ABSTRACT FROM AUTHOR]

We investigate how varying molecular topology of polymers influences crystallization in thin polymer films. In particular, we simulate linear and star polymers of fixed mass having a progressively increasing number of arms (f ≤ 16) in a system where the linear polymer exhibits crystallization in a thin film geometry, but no apparent crystallization in the corresponding bulk material. The degree of crystallization of the polymer film at long times decreases progressively with increasing f, and no crystallization is observed beyond f = 8. Crystallization for smaller values of f develops as a sigmoidally shaped wavefront initiating from the supporting crystalline interface. We suggest that large shape fluctuations and the competition of length scales of star polymers with high f lead to inhibited crystallization. [ABSTRACT FROM AUTHOR]

The contact of heterogeneous materials with different atomic structures and concentrations becomes omnipresent in modern materials. The differences across the interface introduce various gradients that could alter thermodynamic and kinetic behaviors of the materials. Here, we report a spontaneous melting of the interface formed by a crystalline metal and an amorphous solid at the temperature below their respective equilibrium melting temperatures. The transformation can even become continuous with disappearance of all known features of the first-order melting transition. We show that the change in the nature of melting in the interface region is caused by random disordering induced by interdiffusing atomic elements or impurities in the crystalline phase and the presence of a strong concentration gradient constrained by the sample geometry. [ABSTRACT FROM AUTHOR]

The modifying influence of aluminium phosphide to the morphology of primary Si and eutectic Si was investigated in hypereutectic Al-20Si alloys via adding Al-Cu-P master alloy (0.5, 1, 20 wt.%). Microstructural results showed when Al-Cu-P addition from 0 to 0.5%, primary Si phase decreases and eutectic Si phase size remains invariable; when addition higher than 0.5%, primary Si phase keeps invariable, eutectic Si phase size increases. To prove the nucleation effect of AlP on Si phase, interfacial properties of Si/AlP interface were investigated using first-principles calculations. Results showed the AlP(100)/Si(100) interface energy is between −1.45 J/m2 and −1.38 J/m2 for Al-terminated and P-terminated AlP model, both is much smaller than liquid Si/crystalline Si interface (0.34 J/m2), consolidates that AlP particles possess strong nucleation potency for Si phases. Therefore, the modifying influence of AlP to the morphology Si phase is well clarified as a function of AlP content in Al-20Si alloys. [ABSTRACT FROM AUTHOR]

Hybrid inorganic–organic semiconductor (HIOS) interfaces are of interest for new photovoltaic devices operating above the Shockley–Queisser limit. Predicting energy band alignment at the interfaces is crucial for their design, but represents a challenging problem due to the large scales of the system, the energy precision required and a wide range of physical phenomena that occur at the interface. To tackle this problem, many‐body perturbation theory in the non‐self‐consistent GW approximation, orbital relaxation corrections for organic semiconductors, and line‐up potential method for inorganic semiconductors which allows for tractable and accurate computing of energy band alignment in crystalline van‐der‐Waals hybrid inorganic–organic semiconductor interfaces are used. In this work, crystalline tetracene physisorbed on the clean hydrogen‐passivated 1 × 2 reconstructed (100) silicon surface is studied. Using this computational approach, it is found that the energy band alignment is determined by an interplay of the mutual dynamic dielectric screening of two materials and the formation of a dipole layer due to a weak hybridization of atomic/molecular orbitals at the interface. The significant role of the exchange‐correlation effects in predicting band offsets for the hybrid inorganic–organic semiconductor interfaces is also emphasized. [ABSTRACT FROM AUTHOR]

In order to investigate the synergistic effect of different deformation modes (dislocations and local atomistic rearrangements) on the strength of mixed crystalline and amorphous materials, tensile and compressive deformation analyses of a two-dimensional binary system with various microstructures is performed through molecular dynamics simulations. The binary system is composed of atoms with two different atomic radii. By varying the mixing ratio and the interaction force between different atoms, 66 binary system models with various structures are represented, and each model is classified into three categories, crystalline, amorphous, and mixed crystalline/amorphous, through structural analysis. Deformation analysis shows that the strength of the mixed crystalline/amorphous models tends to be weaker than that of the crystal and amorphous models. The is because the edge of the force chain in the amorphous phase appears at the crystalline/amorphous interface, where dislocation release from the interface to the crystalline phase occurs easily. [ABSTRACT FROM AUTHOR]

Extensive molecular dynamics simulations of xenon in two classes of zeolite crystal systems, one consisting of purely intra-crystalline space and the other with both intra- and inter-crystalline space are reported. The latter mimics a typical poly-crystalline sample of zeolite. Comparison of results from these two systems provides insights into the structure and dynamics in the presence of inter-crystalline space. The temperature, as well as the distance between the crystallites, has been varied. The density distribution and diffusivities calculated inside the poly-crystalline system show that the interfacial region between the crystal and the inter-crystalline region acts as a bottleneck for diffusion through the system. At lower temperatures, the particles are trapped at the interface due to the pronounced energy minima present in that region. With the increase in temperature, the particles are able to overcome this barrier frequently, and the transport across the inter-crystalline region is increased. A ballistic or superdiffusive motion is seen in the inter-crystalline region along all the axes except along the axis which has the inter-crystalline space. The transition time for ballistic to diffusive motion increases with the increase in the length of the inter-crystalline space. Velocity auto- and cross correlation functions exhibit strong oscillations and exchange of kinetic energy along directions perpendicular to the direction of the inter-crystalline space. These results explain why uptake and PFGNMRmeasurements exhibit lower values for diffusivity for the same system when compared to Quasi- Elastic Neutron Scattering. Thus, using molecular dynamics simulations, we were able to correlate the difference of diffusivity values measured using various experimental methods where these intercrystalline regions are common. [ABSTRACT FROM AUTHOR]

2D electron gases (2DEGs) formed at oxide interfaces provide a rich testbed for fundamental physics and device applications. While the discussion of the physical origins of this phenomenon continues, the recent discovery of oxide 2DEGs at non-epitaxial interfaces between amorphous and crystalline oxides provides useful insight into this debate. Furthermore, using amorphous oxides offers a low-cost route towards realizing 2DEGs for device applications. In this work, the band offsets of a simple model system of an amorphous-crystalline oxide interface are investigated. The model system consists of amorphous Al2O3 grown on single-crystalline (001) SrTiO3. X-ray photoelectron spectroscopy is employed to study the chemical states, bandgap, and band offsets at the interface. The density of ionic defects near the interface is found to be below the detection limit, and the interface is found to be insulating. Analysis of the relative band structure yields significant interfacial barriers, exceeding 1.05 eV for holes and 2.0 eV for electrons. The barrier for holes is considerably larger than what is known for related material systems, outlining the promise of using amorphous Al2O3 as an effective and simple insulator, an important building block for oxide-based field effect devices. [ABSTRACT FROM AUTHOR]

Invited for this issue's Front Cover is the group of Prof. Anthony O'Mullane from the School of Chemistry and Physics, Queensland University of Technology (QUT). The cover picture shows the presence of crystalline and amorphous domains in an electrodeposited IrO2 film which demonstrate different activity for the oxygen evolution reaction. The presence of amorphous/crystalline interfaces was found to improve the stability of the electrocatalyst. Cover design by Thi Hong Nga Ngo. Read the full text of the Research Article at 10.1002/celc.202300438. [ABSTRACT FROM AUTHOR]

Skin effect that all eigenmodes within a frequency range become edge states is dictated by the topological properties of complex eigenvalues unique in non-Hermitian systems. The prevailing attempts to realize such a fascinating effect are confined to either one-dimensional or nonreciprocal systems exhibiting asymmetric couplings. Here, inspired by a recent model Hamiltonian theory, we propose a realistic reciprocal two-dimensional (2D) photonic crystal (PhC) system that shows the desired skin effect. Specifically, we establish a routine for designing such non-Hermitian systems via revealing the inherent connections between the nontrivial eigenvalue topology of order-2 exceptional points (EPs) and the skin effects. Guided by the proposed strategy, we successfully design a 2D PhC that possesses the EPs with nonzero eigenvalue winding numbers. The spectral area along a specific wavevector direction is then formed by leveraging the symmetry of the macroscopic geometry and the unit cell. The projected-band-structure calculations are performed to demonstrate that the desired skin effect exists at the specific crystalline interfaces. We finally employ time-domain simulations to vividly illustrate this phenomenon by exciting a pulse at the center of a finite-sized PhC. Our results form a solid basis for further experimental confirmations and applications of the skin effect. [ABSTRACT FROM AUTHOR]

Polymer materials with excellent physicochemical and electrical properties are desirable for energy storage applications in advanced electronics and power systems. Here, Al2O3@ZrO2 nanoparticles (A@Z) with a core-shell structure are synthesized and introduced to a P(VDF-HFP) matrix to fabricate P(VDF-HFP)/A@Z nanocomposite films. Experimental and simulation results confirm that A@Z nanoparticles increase the crystallinity and crystallization temperature owing to the effect of the refined crystal size. The incorporation of A@Z nanoparticles leads to conformational changes of molecular chains of P(VDF-HFP), which influences the dielectric relaxation and trap parameters of the nanocomposites. The calculated total trapped charges increase from 13.63 μC of the neat P(VDF-HFP) to 47.55 μC of P(VDF-HFP)/5 vol%-A@Z nanocomposite, indicating a substantial improvement in trap density. The modulated crystalline characteristic and interfaces between nanoparticles and polymer matrix are effective in inhibiting charge motion and impeding the electric conduction channels, which contributes to an improved electrical property and energy density of the nanocomposites. Specifically, a ~200% and ~31% enhancement in discharged energy density and breakdown strength are achieved in the P(VDF-HFP)/5 vol%-A@Z nanocomposite. [ABSTRACT FROM AUTHOR]

At present, the purchasing prices for silicon-based photovoltaic modules with 20% efficiency and more are between 20 and 40 EURct/Wp. These numbers correspond to 40 to 80 EUR/m2 and are in the same range as the mounting costs (material prices plus salaries) of such modules. Installers and operators of photovoltaic systems carefully balance the module and mounting costs when deciding among modules of different efficiencies. This contribution emulates the installer's decision via a simple, analytical module mounting decision (Mo2De) model. A priori, the model, and the resulting conclusions are completely independent of the photovoltaically active material inside the modules. De facto, however, based on the present state (cost, efficiency, reliability, bankability, etc.) of modules fabricated from (single) crystalline Si cells, conclusions on other photovoltaic materials might also be drawn: On the one hand, the model suggests that lower-efficiency modules with efficiencies below 20% will be driven out of the market. Keeping in mind their installation costs, installers will ask for large discounts for lower-efficiency modules. Technologies based on organic semiconductors, CdTe, CIGS, and even multicrystalline Si, might not survive in the utility market, or in industrial and residential applications. Moreover, this 20% mark will soon reach 23%, and finally will stop at around 25% for the very best, large-area (square meter sized) commercial modules based on single crystalline silicon only. On the other hand, it also seems difficult for future higher-efficiency modules based on tandem/triple cells to compete with standard Si-based reference modules. Compared to their expected higher efficiency, the production costs of tandem/triple cell modules and, therefore, also their required markup in sales, might be too high. Depending on the mounting cost, the Mo2De-model predicts acceptable markup values of 1 EURct/Wp (for low mounting costs of around 10 EUR/m2) to 11 EURct/Wp (for high mounting costs of 100 EUR/m2) if the module efficiency increases from 23% to 30%. Therefore, a 23% to 24% module efficiency, which is possible with silicon cells alone, might be enough for many terrestrial photovoltaic applications. [ABSTRACT FROM AUTHOR]

The potential of zero charge (PZC) is a fundamental property that describes the electrode/electrolyte interface. The determination of the PZC at electrode/ionic liquid interfaces has been challenging due to the lack of models that fully describe these complex interfaces as well as the non-standardized approaches used to characterize them. In this work, we present a method that combines electrode immersion transient and impedance measurements for the determination of the PZC. This combined approach allows the distinction of the potential of zero free charge (pzfc), related to fast double layer charging on a millisecond timescale, from a potential of zero charge on a timescale of tens of seconds related to slower ion transport processes at the interface. Our method highlights the complementarity of these electrochemical techniques and the importance of selecting the correct timescale to execute experiments and interpret the results. [ABSTRACT FROM AUTHOR]

The development of accident-tolerant materials is of great significance for preventing the zirconium–water reactions and improving the inherent safety of nuclear reactors. In this study, ZrC/Ni multilayers with average layer thicknesses of 5, 10, 20, 50, and 100 nm were designed and successfully fabricated by magnetron sputtering. The characterization results of GIXRD, SEM, AFM, TEM, etc., show that the series of films are mainly composed of alternately deposited Ni crystalline layers and ZrC amorphous layers, and the interface is clear. The films were irradiated with 50 keV He+ with a fluence of 1.0 × 1017 ions/cm2 at room temperature, and the films with different layer thicknesses kept the original phase composition. It was found that an amorphous transition layer with a thickness of about 30 nm appeared between the amorphous and crystalline interface of the 100 nm film by TEM characterization. The analysis shows that this layer is formed by the mixing of Ni and Zr elements induced by irradiation, which is not conducive to He+ migration and produces large-sized helium bubbles. The appearance of the transition layer improves the irradiation stability of the amorphous/crystalline composite film, thus providing a theoretical basis for the application of this type of material in fuel cladding. [ABSTRACT FROM AUTHOR]

In this work, the epitaxial semipolar (11–22) AlN was prepared on nonpolar m-sapphire substrate by combining sputtering and high-temperature annealing. According to our systematic measurements and analysis from XRD, Raman spectra, and AFM, the evolution of crystalline structure and morphology was investigated upon increasing AlN thickness and annealing duration. The annealing operation intensively resets the lattice and improves the crystalline quality. By varying the film thickness, the contribution from the AlN-sapphire interface on crystalline quality and lattice parameters during the annealing process was investigated, and its contribution was found to be not so obvious when the thickness increased from 300 nm to 1000 nm. When the annealing was performed under durations from 1 to 5 h, the crystalline quality was found unchanged; meanwhile, the evolution of morphology was pronounced, and it means the crystalline reorganization happens prior to morphology reset. Finally, the annealing treatment enabled a zig-zag morphology on the AlN template along the sapphire [0001] direction in the plane, which potentially affects the subsequent device epitaxy process. Therefore, our results act as important experience for the semipolar nitride semiconductor laser device preparation, particularly for the epitaxy of microcavity structure through providing the crystalline evolution. [ABSTRACT FROM AUTHOR]

Direct wafer bonding of β-Ga2O3 and N-polar GaN at a low temperature was achieved by acid treatment and atmospheric plasma activation. The β-Ga2O3/GaN surfaces were atomically bonded without any loss in crystalline quality at the interface. The impact of post-annealing temperature on the quality of bonding interfaces was investigated. Post-annealing at temperatures higher than 700 °C increases the area of voids at bonded interfaces probably due to the difference in the coefficient of thermal expansion. The integration of β-Ga2O3 on the GaN substrate achieved in this work is one of the promising approaches to combine the material merits of both GaN and Ga2O3 targeting the fabrication of novel GaN/β-Ga2O3 high-frequency and high-power electronics as well as optoelectronic devices. [ABSTRACT FROM AUTHOR]

The focus of this investigation is the interface regions in crystalline Fe-nanoparticles as well as amorphous nanograins with an average grain size of about 4 nm. The iron nanograins have been compacted under external pressure; the resulting region of the contact between the grains is called an interface. It was found that the interface was three-dimensional with an atomic order different from that present in the neighboring nanograins. The structure of the interfacial region between adjacent amorphous grains has been found to be similar to those in crystalline Fe-nanograins. In other words, the structure of the interface formed under external pressure is independent of the structure of the adjacent grains. The effect of the structure of the interfaces on the magnetic hyperfine interactions and the magnetic moments is studied. In addition, the atomic structures of the interfaces have been studied by means of synchrotron high energy X-ray diffraction. The results obtained are presented in the form of radial distribution functions suggesting the following atomic structure of interfaces: (1) a short-range order of clusters with distorted bcc cells and (2) a middle-range (mesoscopic) order different from that of the bcc cells. [ABSTRACT FROM AUTHOR]

Phase‐change material (PCM) devices are one of the most mature nonvolatile memories. However, their high power consumption remains a bottleneck problem limiting the data storage density. One may drastically reduce the programming power by patterning the PCM volume down to nanometer scale, but that route incurs a stiff penalty from the tremendous cost associated with the complex nanofabrication protocols required. Instead, here a materials solution to resolve this dilemma is offered. The authors work with memory cells of conventional dimensions, but design/exploit a PCM alloy that decomposes into a heterogeneous network of nanoscale crystalline domains intermixed with amorphous ones. The idea is to confine the subsequent phase‐change switching in the interface region of the crystalline nanodomain with its amorphous surrounding, forming/breaking "nano‐bridges" that link up the crystalline domains into a conductive path. This conductive‐bridge switching mechanism thus only involves nanometer‐scale volume in programming, despite of the large areas in contact with the electrodes. The pore‐like devices based on spontaneously phase‐separated Ge13Sb71O16 alloy enable a record‐low programming energy, down to a few tens of femtojoule. The new PCM/fabrication is fully compatible with the current 3D integration technology, adding no expenses or difficulty in processing. [ABSTRACT FROM AUTHOR]

The issue of accumulated seashell waste has been increasingly addressed in the studies of its applicability as a secondary source of calcium carbonate. In this work, the mechanism of the thermo-oxidative degradation of two types of mollusk shells (Dosinia exoleta—DE and oyster Ostrea edulis—OE) was investigated using simultaneous thermal analysis. Physicochemical characterization of raw and calcined materials was performed by XRD and SEM techniques. Results show that increasing powder particle size and heating rate affect the degradation of investigated shells differently and have a significant contribution to released quantities of CO2. It was proposed that the calcination rate of DE powders is determined by the strain-induced collapse of CO2-deficient calcite at its interface with crystalline CaO rods-like structure, with simultaneous expulsion of CO2. A much higher CO2 concentration was identified during the degradation of OE powders, favoring the carbonation reaction and, consequently, increasing the temperature and activation energy of the investigated reaction. Under elevated CO2 concentration, the CaO aggregation step is enhanced by slower reaction kinetics at lower temperatures since both CO2 desorption and structural transformations are probably hindered. The proposed mechanism leads to a meaningful correlation between thermodynamic quantities (enthalpy–entropy compensation) in the form of an iso-kinetic relationship. [ABSTRACT FROM AUTHOR]

Mixtures of nonfullerene acceptors (NFAs) are prepared to fine‐tune bulk heterojunction (BHJ) thin‐film morphologies. The acceptor phase resulting from these mixtures has unique physical properties with excellent optoelectronic processes that dictate the output of organic photovoltaic (OPV) devices. Remarkable short‐circuit current densities (JSC) and fill factors (FFs) are achieved due to the formation of better crystalline fibrils that suppress geminate recombination, leading to improved charge transport with enhanced crystallinity and aligned cascading energy levels confirm efficient exciton diffusion and dissociation, yielding more effective exciton recycling. The decreased Urbach energy and suppressed energetic disorder account for the improvement in the open‐circuit voltage (VOC). A maximum power conversion efficiency of 17.86% is obtained, underscoring the importance of using specific material interactions to produce a suitable morphology and manage energy loss, resulting in ideal organic solar cell (OSC) devices. [ABSTRACT FROM AUTHOR]

Keywords: Iridium oxide; oxygen evolution reaction; electrodeposition; surface area; annealingThe Front Cover shows the presence of crystalline and amorphous domains in an electrodeposited IrO2 film which demonstrate different activity for the oxygen evolution reaction. The presence of amorphous/crystalline interfaces was found to improve the stability of the electrocatalyst. Cover design by Thi Hong Nga Ngo. More information can be found in the Research Article by T. H. Nga Ngo et al...By Thi Hong Nga Ngo; Jonathan Love and Anthony P. O'MullaneReported by Author; Author; Author [Extracted from the article]

The concave behaviour of the Porod invariant observed during the calcination of CaCO3 powder samples suggests the following picture of the evolving internal structure of the samples. The outset sample is formed by a crystalline CaCO3 phase and a void phase. During the calcination, the first phase shrinks in volume at fixed density since the temperature increase breaks down the crystalline structure at the interface, leading to the formation of an amorphous phase comprising an equal number of CO2 and CaO atomic groups. The last groups gradually condense, forming a third phase of solid CaO of constant density and increasing volume fraction, while the companion CO2 groups flow out of the sample. The amorphous phase occupies, with a variable density, all the volume left free by the other two phases. At the end of the calcination, both the volume fraction of the first phase and the density of the amorphous phase vanish so that the sample will again be made up of two phases: the voids and the solid CaO. Best‐fitting the resulting theoretical expressions of the Porod invariant and of the Porod law coefficient to the observed values, one can determine the matter densities, volume fractions and specific surface areas of the phases. [ABSTRACT FROM AUTHOR]

The development of ethanol electrooxidation catalysts with high activity and robust stability is essential for the commercialization of direct ethanol fuel cells. However, because of their low C1 selectivity, the electrocatalytic efficiency of catalysts for complete ethanol oxidation is still far from satisfying. Herein, a novel 2D Pd--Au heterogeneous catalyst for enhancing C1 selectivity to achieve highly efficient ethanol oxidation through phase and interphase engineering is designed. It is found that owing to the plentiful amorphous/crystalline interphases, the selectivity of C1 pathway on Pd--Au heterocatalyst can be improved up to 33.2% at a low potential, 10.4 times higher than commercial Pd/C (3.2%). Furthermore, 89.1% of initial mass activity of Pd--Au HNS can be retained after the accelerated degradation test of 2000 potential cycles, much higher than those of Pd NS (39.3%), commercial Pd/C (34.4%), and Pt/C (11.4%). The CO stripping and in situ Fourier transform infrared experiments reveal that 2D Pd--Au heterocatalyst, with intricate design of the amorphous Pd domain and the crystalline Au cluster interface, has better antipoisoning properties and stronger C--C bond cleavage ability than pure Pd nanosheets. Density functional theory calculations further demonstrate that the introduction of Au clusters switches on the electroactivity of amorphous Pd as the electron pump to accomplish the complete oxidation of ethanol, in which the selectivity for C1 pathway is significantly boosted whereas the typical C2 pathway is substantially blocked. [ABSTRACT FROM AUTHOR]

The shear of a crystalline interface by a matrix dislocation is an elementary phenomenon of plasticity that generates a three-dimensional elastic field difficult to express. However, in the case of a flat interface and two elastic isotropic media, the present work shows that this field can be described starting from an explicit form of the Green tensor associated with a point force exerted in one of the crystals. Indeed, the knowledge of this tensor makes it possible to express the displacement field of a dislocation in the final form of a surface integral. Because the shear is limited by a matrix branch and an interfacial branch, the dislocation can be called 'hybrid dislocation' or HD. If the two branches are straight, the field is that of an angular HD. Moreover, if the crystals are identical, the field becomes that of an angular matrix dislocation whose field is well known since Yoffe (1960). By applying the superimposition theorem, it becomes possible to determine the field of more complex configurations, such as those sometimes observed during the transmission of the plastic slip through the interfaces. [ABSTRACT FROM AUTHOR]

Mathematical analysis is performed to examine the reflection and transmission phenomena of plane waves at the corrugated interface of crystalline structure separating two distinct monoclinic thermoelastic media. Analysis of this phenomena is achieved adopting classical dynamic coupled, Lord–Shulman, and Green–Lindsay theories. Using Rayleigh's methods, the expressions of reflection and transmission coefficients of reflected and transmitted waves are deduced for the case of corrugated as well as plane interfaces. The influence of corrugation and frequency parameters on reflection and transmission coefficients for all three theories has been extensively analyzed with a comparative approach. Findings of the study are demonstrated through numerical and graphical results. Furthermore, the obtained result is validated with the preexisting result. [ABSTRACT FROM AUTHOR]

Coarse-grained descriptions of dislocation motion in crystalline metals inherently represent a loss of information regarding dislocation-dislocation interactions. In the present work, we consider a coarse-graining framework capable of re-capturing these interactions by means of the dislocation-dislocation correlation functions. The framework depends on a convolution length to define slip-system-specific dislocation densities. Following a statistical definition of this coarse-graining process, we define a spatial correlation function which will allow the arrangement of the discrete line system at two points—and thus the strength of their interactions at short range—to be recaptured into a mean field description of dislocation dynamics. Through a statistical homogeneity argument, we present a method of evaluating this correlation function from discrete dislocation dynamics simulations. Finally, results of this evaluation are shown in the form of the correlation of dislocation densities on the same slip-system. These correlation functions are seen to depend weakly on plastic strain, and in turn, the dislocation density, but are seen to depend strongly on the convolution length. Implications of these correlation functions in regard to continuum dislocation dynamics as well as future directions of investigation are also discussed. [ABSTRACT FROM AUTHOR]

In this work, the irreversible effects of an applied electric field on the magnetotransport properties of LaAlO3/SrTiO3 conducting interfaces are investigated, with focus on their multiband character. Samples of different types, namely with either crystalline or amorphous LaAlO3 overlayer, are studied. The two‐band analysis highlights the similarity of the electronic properties of crystalline and amorphous interfaces, regardless much different carrier densities and mobilities. Furthermore, filling and depletion of the two bands follow very similar patterns, at least in qualitative terms, in the two types of samples. In agreement with previous works on crystalline interfaces, it is observed that an irreversible charge depletion takes place after application of a first positive back gate voltage step. Such charge depletion affects much more, in relative terms, the higher and three‐dimensional dyz, dzx bands than the lower and bidimensional dxy, driving the system through the Lifshitz transition from two‐band to single band behavior. The quantitative analysis of experimental data evidences the roles of disorder, apparent in the depletion regime, and temperature. Noteworthy, filling and depletion of the two bands follow very similar patterns in crystalline and amorphous samples, at least in qualitative terms, regardless much different carrier densities and mobilities. [ABSTRACT FROM AUTHOR]

Poor plasticity and small dimension are the main disadvantages of metallic glass. Diffusion bonding and composite fabrication between bulk metallic glasses (BMGs) and crystal metal are promising methods of addressing these disadvantages. In this study, the long‐term atomic diffusion behavior in the glass transition temperature (Tg) is investigated to avoid the formation of the crystalline phase at the interface. Diffusion‐coupled Ni/Zr48Cu36Ag8Al8 BMG is successfully fabricated by sputtering deposition. The diffusivities of Ni in Zr48Cu36Ag8Al8 metallic glass are calculated by using the thin‐film solution of Fick's second law. The diffusivities of Ni in Zr48Cu36Ag8Al8 alloy are functions of annealing temperature and time because of the dominant effect of the free volume. High‐resolution transmission electron microscopy results show that there are no crystals formed at the interface of diffusion‐coupled Ni/Zr48Cu36Ag8Al8 BMG below Tg, and mutual element diffusion occurs near the interface. Analysis of the diffusion behavior and microstructure indicates that the long‐term annealing below Tg can be applied to the diffusion bonding of BMG and crystal metal. [ABSTRACT FROM AUTHOR]

Solid-phase epitaxy (SPE) and other three-dimensional epitaxial crystallization processes pose challenging structural and chemical characterization problems. The concentration of defects, the spatial distribution of elastic strain, and the chemical state of ions each vary with nanoscale characteristic length scales and depend sensitively on the gas environment and elastic boundary conditions during growth. The lateral or three-dimensional propagation of crystalline interfaces in SPE has nanoscale or submicrometer characteristic distances during typical crystallization times. An in situ synchrotron hard x-ray instrument allows these features to be studied during deposition and crystallization using diffraction, resonant scattering, nanobeam and coherent diffraction imaging, and reflectivity. The instrument incorporates a compact deposition system allowing the use of short-working-distance x-ray focusing optics. Layers are deposited using radio-frequency magnetron sputtering and evaporation sources. The deposition system provides control of the gas atmosphere and sample temperature. The sample is positioned using a stable mechanical design to minimize vibration and drift and employs precise translation stages to enable nanobeam experiments. Results of in situ x-ray characterization of the amorphous thin film deposition process for a SrTiO3/BaTiO3 multilayer illustrate implementation of this instrument. [ABSTRACT FROM AUTHOR]