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Heusler magnetic alloys offer a wide variety of electronic properties very promising for spintronics and magnonics. Some alloys exhibit a spin gap in their band structure at the Fermi energy, the so-called half-metal magnetic (HMM) behavior. This particular property leads to two very interesting properties for spintronics, i.e., fully polarized current together with ultra-low magnetic damping, two key points for spin-transfer-torque based devices. This Tutorial gives experimental details to grow and characterize Heusler Co2MnZ compounds in thin films (Z = Al, Si, Ga, Ge, Sn, Sb) by using molecular beam epitaxy in order to get the proper predicted electronic properties. A first part of this Tutorial is dedicated to control the stoichiometry as best as possible with some methods to test it. The chemical ordering within the lattice was examined by using electron diffraction during growth, regular x-ray diffraction, and scanning transmission electron microscopy. In particular, standard x-ray diffraction is carefully analyzed depending on the chemical ordering in the cubic cell and shown to be inefficient to distinguish several possible phases, on the contrary to electron microscopy. The electronic properties, i.e., magnetic moment, spin polarization, and magnetic damping were reviewed and discussed according to the stoichiometry of the films and also theoretical predictions. Polycrystalline films were also analyzed, and we show that the peculiar HMM properties are not destroyed, a good news for applications. A clear correlation between the spin polarization and the magnetic damping is experimentally demonstrated. At least, our study highlights the major role of stoichiometry on the expected properties. [ABSTRACT FROM AUTHOR]

The helicity of three‐dimensional (3D) topological insulator surface states has drawn significant attention in spintronics owing to spin‐momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice‐versa, through the Rashba–Edelstein effect. However, experimental signatures of these surface states to the spin‐charge conversion are extremely difficult to disentangle from bulk state contributions. Here, spin‐ and angle‐resolved photo‐emission spectroscopy, and time‐resolved THz emission spectroscopy are combined to categorically demonstrate that spin‐charge conversion arises mainly from the surface state in Bi1 − xSbx ultrathin films, down to few nanometers where confinement effects emerge. This large conversion efficiency is correlated, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba–Edelstein response. Both surface state robustness and sizeable conversion efficiency in epitaxial Bi1 − xSbx thin films bring new perspectives for ultra‐low power magnetic random‐access memories and broadband THz generation. [ABSTRACT FROM AUTHOR]

Reducing the thickness of a material to its two-dimensional (2D) limit can have dramatic consequences for its collective electronic states, including magnetism, superconductivity, and charge and spin ordering. An extreme case is TiTe2, where a charge density wave (CDW) emerges in the single-layer, which is absent for the bulk compound, and whose origin is still poorly understood. Here, we investigate the electronic band structure evolution across this CDW transition using temperature-dependent angle-resolved photoemission spectroscopy. Our study reveals an orbital-selective band hybridisation between the backfolded conduction and valence bands occurring at the CDW phase transition, which in turn leads to a significant electronic energy gain, underpinning the CDW transition. For the bulk compound, we show how this energy gain is almost completely suppressed due to the three-dimensionality of the electronic band structure, including via a kz-dependent band inversion which switches the orbital character of the valence states. Our study thus sheds new light on how control of the electronic dimensionality can be used to trigger the emergence of new collective states in 2D materials. [ABSTRACT FROM AUTHOR]

Electronic band structures in solids stem from a periodic potential reflecting the structure of either the crystal lattice or electronic order. In the stoichiometric ruthenate Ca3Ru2O7, numerous Fermi surface-sensitive probes indicate a low-temperature electronic reconstruction. Yet, the causality and the reconstructed band structure remain unsolved. Here, we show by angle-resolved photoemission spectroscopy, how in Ca3Ru2O7 a C2-symmetric massive Dirac semimetal is realized through a Brillouin-zone preserving electronic reconstruction. This Dirac semimetal emerges in a two-stage transition upon cooling. The Dirac point and band velocities are consistent with constraints set by quantum oscillation, thermodynamic, and transport experiments, suggesting that the complete Fermi surface is resolved. The reconstructed structure—incompatible with translational-symmetry-breaking density waves—serves as an important test for band structure calculations of correlated electron systems. [ABSTRACT FROM AUTHOR]

The strong impact of molecular beam epitaxy growth and Synchrotron Radiation characterization tools in the understanding of fundamental issues in nanomagnetism and spintronics is illustrated through the example of fully epitaxial MgO-based Magnetic Tunnel Junctions (MTJs). If ab initio calculations predict very high tunnel magnetoresistance (TMR) in such devices, some discrepancy between theory and experiments still exists. The influence of imperfections in real systems has thus to be considered like surface contaminations, structural defects, unexpected electronic states, etc. The influence of possible oxygen contamination at the Fe/MgO(001) interface is thus studied, and is shown to be not so detrimental to TMR as predicted by ab initio calculations. On the contrary, the decrease of dislocations density in the MgO barrier of MTJs using Fe1-xVx electrodes is shown to significantly increase TMR. Finally, unexpected transport properties in Fe1-XCox/MgO/ Fe1-XCox (001) are presented. With the help of spin and symmetry resolved photoemission and ab initio calculation, the TMR decrease for Co content higher than 25% is shown to come from the existence of an interface state and the shift of the empty D1 minority spin state towards the Fermi level. [ABSTRACT FROM AUTHOR]

Spin-polarization and magnetic damping are measured for several polycrystalline films with each of them being made of a different single Co2Mn-based Heusler compound. As several epitaxial Co2Mn-based Heusler compounds are shown to be half-metal magnetic materials with full spin-polarization and ultralow magnetic damping, we explore here these properties but in polycrystalline films. Co2MnSi, Co2MnGe, and Co2MnGa thin films were grown on glass substrates and analyzed in situ by electron diffraction and spin-resolved photoemission and ex situ by transmission electron microscopy and ferromagnetic resonance. Despite the polycrystalline state of the films, they still exhibit high spin polarizations and very low magnetic damping coefficients. The latter are at least of the same order as the best epitaxial films using regular ferromagnetic materials. The key point to achieve such properties is to control the Heusler stoichiometry as best as possible. [ABSTRACT FROM AUTHOR]

Abstract: The organic spinterface describes the spin‐polarized properties that develop, due to charge transfer, at the interface between a ferromagnetic metal (FM) and the molecules of an organic semiconductor. However, assembling this interface may degrade the properties of its constituents. To circumvent this issue, one can separate the molecular and FM films using a less reactive nonmagnetic metal (NM). Spin‐resolved photoemission spectroscopy measurements on the prototypical system Co(001)//Cu/Mn‐phthalocyanine (MnPc) reveal at room temperature a high spin polarization P of the Cu/MnPc spinterface atop ferromagnetic Co. Surprisingly, it is found that the Cu thickness dependence of P remains essentially constant up to 10 monolayers (ML), which is inconsistent with the description of indirect exchange coupling between the Co layer and the molecule's Mn site. Ab initio calculations account for this fundamental discrepancy by showing that the topmost Cu layer before MnPc adsorption is already significantly spin‐polarized, and contributes to the formation of the Cu/MnPc spinterface atop Co. The results open a route toward 1) integrating electronically fragile molecules within organic spinterfaces and 2) electrically manipulating molecular spin chains using the well‐documented spin‐transfer torque properties of the FM/NM bilayer. [ABSTRACT FROM AUTHOR]

We investigated in detail the structural, chemical, and magnetic properties of Fe at the interface with MgO. The samples were grown by molecular-beam epitaxy and analyzed by using reflection high-energy electron diffraction, scanning tunneling microscopy, Auger electron spectroscopy, x-ray photoemission spectroscopy (XPS), x-ray-absorption spectroscopy (XAS), and x-ray magnetic circular dichroism (XMCD) measurements. We discuss the presence or absence of C and O contaminants at the surface of the metallic film. We actually show that when growing the first Fe layer on the initial MgO substrate, a carbon contamination at the surface of the annealed Fe layer is observed leading to a C(2×2) surface structure. We propose a method to eliminate this carbon contamination and to get interfaces free of carbon. On the other hand, we observed that the reactivity of the Fe surface to oxygen contamination is greatly influenced by the presence of carbon or absence on the surface. The influence of oxygen adsorption at the Fe surface on the MgO growth will also be discussed. Concerning the hybridization between Fe or Co with MgO, XPS, and XAS-XMCD analyses clearly demonstrate that the charge transfer is weak, and that the magnetization at the interface is larger than in bulk (3μB/at for Fe). With such clean interfaces, reproducible magnetoresistance equal to 160% are obtained on Fe/MgO(3 nm)/Fe(001) 100×100 μm2 tunnel junctions at room temperature in our laboratory. Finally, we show that pollution at the bottom Fe/MgO interface modify drastically spin-dependent tunneling properties. [ABSTRACT FROM AUTHOR]

We report on the magnetization at the Cr/MgO interface, which we studied through two complementary techniques: angle-resolved photoemission spectroscopy and polarized neutron reflectivity. We experimentally observe an enhanced interface magnetization at the interface, yet with values much smaller than the ones reported so far by theoretical and experimental studies on Cr(001) surfaces. Our findings cast some doubts on the interpretations on previous works and could be useful in antiferromagnetic spin torque studies. [ABSTRACT FROM AUTHOR]

Two-dimensional electron gases (2DEGs) at transition-metal oxide (TMO) interfaces, and boundary states in topological insulators, are being intensively investigated. The former system harbors superconductivity, large magneto-resistance, and ferromagnetism. In the latter, honeycomb-lattice geometry plus bulk spin-orbit interactions lead to topologically protected spin-polarized bands. 2DEGs in TMOs with a honeycomb-like structure could yield new states of matter, but they had not been experimentally realized, yet. We successfully created a 2DEG at the (111) surface of KTaO3, a strong insulator with large spin-orbit coupling. Its confined states form a network of weakly-dispersing electronic gutters with 6-fold symmetry, a topology novel to all known oxide-based 2DEGs. If those pertain to just one Ta-(111) bilayer, model calculations predict that it can be a topological metal. Our findings demonstrate that completely new electronic states, with symmetries not realized in the bulk, can be tailored in oxide surfaces, promising for TMO-based devices. [ABSTRACT FROM AUTHOR]

Present methods for producing semiconducting-metallic graphene networks suffer from stringent lithographic demands, process-induced disorder in the graphene, and scalability issues. Here we demonstrate a one-dimensional metallic-semiconducting-metallic junction made entirely from graphene. Our technique takes advantage of the inherent, atomically ordered, substrate-graphene interaction when graphene is grown on SiC, in this case patterned SiC steps, and does not rely on chemical functionalization or finite-size patterning. This scalable bottom-up approach allows us to produce a semiconducting graphene strip whose width is precisely defined to within a few graphene lattice constants, a level of precision beyond modern lithographic limits, and which is robust enough that there is little variation in the electronic band structure across thousands of ribbons. The semiconducting graphene has a topographically defined few-nanometre-wide region with an energy gap greater than 0.5?eV in an otherwise continuous metallic graphene sheet. [ABSTRACT FROM AUTHOR]

As silicon is the basis of conventional electronics, so strontium titanate (SrTiO3) is the foundation of the emerging field of oxide electronics. SrTiO3 is the preferred template for the creation of exotic, two-dimensional (2D) phases of electron matter at oxide interfaces that have metal-insulator transitions, superconductivity or large negative magnetoresistance. However, the physical nature of the electronic structure underlying these 2D electron gases (2DEGs), which is crucial to understanding their remarkable properties, remains elusive. Here we show, using angle-resolved photoemission spectroscopy, that there is a highly metallic universal 2DEG at the vacuum-cleaved surface of SrTiO3 (including the non-doped insulating material) independently of bulk carrier densities over more than seven decades. This 2DEG is confined within a region of about five unit cells and has a sheet carrier density of ∼0.33 electrons per square lattice parameter. The electronic structure consists of multiple subbands of heavy and light electrons. The similarity of this 2DEG to those reported in SrTiO3-based heterostructures and field-effect transistors suggests that different forms of electron confinement at the surface of SrTiO3 lead to essentially the same 2DEG. Our discovery provides a model system for the study of the electronic structure of 2DEGs in SrTiO3-based devices and a novel means of generating 2DEGs at the surfaces of transition-metal oxides. [ABSTRACT FROM AUTHOR]

The electronic state of cerium has been investigated by core-level and valence band photoemission spectroscopy in ultra-thin films of a Ce-Pd monocrystalline compound obtained by epitaxial growth. Careful characterization of the surface leads us to the conclusion that the Ce configuration admixture is strongly reduced in the surface layer. By evaporating one extra monolayer of Pd, we were able to obtain core-level photoemission spectra without any surface contribution and to evidence an exceptional configuration mixing for the bulk ground state. The 4 f spectral function obtained from photoemission measurements at the N4,5 threshold also exhibits a very singular behavior and shed some new light on the description of highly-hybridized 4 f states in Ce compounds. [ABSTRACT FROM AUTHOR]

Band inversions are key to stabilising a variety of novel electronic states in solids, from topological surface states to the formation of symmetry-protected three-dimensional Dirac and Weyl points and nodal-line semimetals. Here, we create a band inversion not of bulk states, but rather between manifolds of surface states. We realise this by aliovalent substitution of Nb for Zr and Sb for S in the ZrSiS family of nonsymmorphic semimetals. Using angle-resolved photoemission and density-functional theory, we show how two pairs of surface states, known from ZrSiS, are driven to intersect each other near the Fermi level in NbGeSb, and to develop pronounced spin splittings. We demonstrate how mirror symmetry leads to protected crossing points in the resulting spin-orbital entangled surface band structure, thereby stabilising surface state analogues of three-dimensional Weyl points. More generally, our observations suggest new opportunities for engineering topologically and symmetry-protected states via band inversions of surface states. Bulk band inversions in solids may unlock topological surface phenomena and symmetry-protected states. Here, the authors generate a surface state band inversion in the nonsymmorphic semimetal NbGeSb, leading to protected crossing points in the resulting spin-orbital entangled surface band structure. [ABSTRACT FROM AUTHOR]

We show, for the first time, that the density of states of a magnetic thin film covered by an insulating barrier may be measured by using spin-resolved X-ray photo-mission spectroscopy (SR-XPS). The basic idea is the lack of density of states of an insulator from the top of the valence band to the Fermi level. In this range of energy, the density of states of the underneath magnetic layer can be identified. This simple principle is demonstrated here for the (001) Fe/MgO system. From SR-XPS measurements, a polarization fully integrated in the κ space and corrected from remanence near 42% is obtained. Furthermore, we evidence a weak Fe-O hybridization and an enhancement of the Fe magnetic moment at the interface with MgO. These results are in agreement with previous ab initio calculations and certainly explain the fact that the Fe polarization is not destroyed in contact with MgO. [ABSTRACT FROM AUTHOR]

The ability of the full Heusler alloy Co1.5Fe1.5Ge(001) (CFG) to be a Half-Metallic Magnetic (HMM) material is investigated. Epitaxial CFG(001) layers were grown by molecular beam epitaxy. The results obtained using electron diffraction, X-ray diffraction, and X-ray magnetic circular dichroism are consistent with the full Heusler structure. The pseudo-gap in the minority spin density of state typical in HMM is examined using spin-resolved photoemission. Interestingly, the spin polarization found to be negative at EF in equimolar CoFe(001) is observed to shift to positive values when inserting Ge in CoFe. However, no pseudo-gap is found at the Fermi level, even if moderate magnetization and low Gilbert damping are observed as expected in HMM materials. Magneto-transport properties in MgO-based magnetic tunnel junctions using CFG electrodes are investigated via spin and symmetry resolved photoemission. [ABSTRACT FROM AUTHOR]