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The conversion of CO2 into liquid fuels, using only sunlight and water, offers a promising path to carbon neutrality. An outstanding challenge is to achieve high efficiency and product selectivity. Here, we introduce a wireless photocatalytic architecture for conversion of CO2 and water into methanol and oxygen. The catalytic material consists of semiconducting nanowires decorated with core-shell nanoparticles, with a copper-rhodium core and a chromium oxide shell. The Rh/CrOOH interface provides a unidirectional channel for proton reduction, enabling hydrogen spillover at the core-shell interface. The vectorial transfer of protons, electrons, and hydrogen atoms allows for switching the mechanism of CO2 reduction from a proton-coupled electron transfer pathway in aqueous solution to hydrogenation of CO2 with a solar-to-methanol efficiency of 0.22%. The reported findings demonstrate a highly efficient, stable, and scalable wireless system for synthesis of methanol from CO2 that could provide a viable path toward carbon neutrality and environmental sustainability. [ABSTRACT FROM AUTHOR]

Research into Zinc Blende III–V compound semiconductors has focused almost entirely on growth on (001)-oriented substrates for more than five decades. This is because high-quality epitaxial layers can be achieved relatively smoothly when III–Vs are grown on (001) substrates. However, emerging technologies generated renewed interest in the growth of high-quality III–Vs on (111)-oriented substrates. Prime examples of these applications are devices based on spin transport, and low-anisotropy tensile-strained quantum dots for quantum computing applications. Growth on (111) substrates could also help understand the growth of complex chalcogenides. Exploring these applications requires high-quality epitaxial thin films on (111) substrates. Here, we demonstrate for the first time the atomically smooth and defect-free growth of nanoscale InGaAs/InAlAs superlattice on InP(111)-oriented substrate using molecular beam epitaxy (MBE). This was achieved by optimizing the substrate misorientation angle and growth conditions. The growth optimization was guided by scanning transmission electron microscopy Moiré geometrical phase analysis and density functional theory calculations. It is shown that ensuring the step-flow growth mode for each ternary layer is the most effective way of achieving high-quality epitaxial structures on (111)-oriented substrates. This work sets the stage for developing InGaAs/InAlAs/InP(111) electronic and photonic structures with properties that can be tuned with strain-mediated piezoelectric field engineering in high-quality epitaxial thin films. The reported observations should help optimize epitaxy in other Zinc Blende material systems for the structure that could benefit from the tunable piezoelectric effects. [ABSTRACT FROM AUTHOR]

A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patterning of the Si substrate to form micrometer-scale pillars and subsequent electrochemical porosification. The investigation of the epitaxial Ge crystalline quality by X-ray diffraction, transmission electron microscopy and etch-pits counting demonstrates the full elastic relaxation of defect-free microcrystals. The achievement of dislocation free heteroepitaxy relies on the interplay between elastic deformation of the porous micropillars, set under stress by the lattice mismatch between Ge and Si, and on the diffusion of Ge into the mesoporous patterned substrate attenuating the mismatch strain at the Ge/Si interface. Many complex devices rely on epitaxial growth with high crystallinity and accurate composition. Here authors report epitaxial growth of Ge on deep etched porous Si pillars to provide a fully compliant substrate enabling elastic relaxation of defect free Ge microcrystals. [ABSTRACT FROM AUTHOR]

The energy resolution in hyperspectral imaging techniques has always been an important matter in data interpretation. In many cases, spectral information is distorted by elements such as instruments' broad optical transfer function, and electronic high frequency noises. In the past decades, advances in artificial intelligence methods have provided robust tools to better study sophisticated system artifacts in spectral data and take steps towards removing these artifacts from the experimentally obtained data. This study evaluates the capability of a recently developed deep convolutional neural network script, EELSpecNet, in restoring the reality of a spectral data. The particular strength of the deep neural networks is to remove multiple instrumental artifacts such as random energy jitters of the source, signal convolution by the optical transfer function and high frequency noise at once using a single training data set. Here, EELSpecNet performance in reducing noise, and restoring the original reality of the spectra is evaluated for near zero-loss electron energy loss spectroscopy signals in Scanning Transmission Electron Microscopy. EELSpecNet demonstrates to be more efficient and more robust than the currently widely used Bayesian statistical method, even in harsh conditions (e.g. high signal broadening, intense high frequency noise). [ABSTRACT FROM AUTHOR]

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in planview geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film. [ABSTRACT FROM AUTHOR]

Due to the increasing desire for nanoscale optoelectronic devices with green light emission capability and high efficiency, ternary III‐N‐based nanorods are extensively studied. Many efforts have been taken on the planar device configuration, which lead to unavoided defects and strains. With selective‐area molecular‐beam epitaxy, new "Russian Doll"‐type InGaN/AlGaN quantum wells (QWs) have been developed, which could largely alleviate this issue. This work combines multiple nanoscale characterization methods and k∙p theory calculations so that the crystalline structure, chemical compositions, strain effects, and light emission properties can be quantitatively correlated and understood. The 3D structure and atomic composition of these QWs are retrieved with transmission electron microscopy and atom probe tomography while their green light emission has been demonstrated with room‐temperature cathodoluminescence experiments. k∙p theory calculations, with the consideration of strain effects, are used to derive the light emission characteristics that are compared with the local measurements. Thus, the structural properties of the newly designed nanorods are quantitatively characterized and the relationship with their outstanding optical properties is described. This combined approach provides an innovative way for analyzing nano‐optical‐devices and new strategies for the structure design of light‐emitting diodes. [ABSTRACT FROM AUTHOR]

1 In a 71-year-old man who 3 years ago had undergone ESD for high-grade dysplasia and focal intramucosal carcinoma in the left colon, high-grade dysplasia recurrence was detected in the area previously treated. ESD for dysplasia in IBD is feasible, but long-term follow-up data are lacking especially for the management of dysplasia recurrence in an area previously treated by ESD [2][3][4][5]. [Extracted from the article]

Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission wavelengths less than 250 nm have remained inaccessible. Here we show that Al-rich AlGaN nanowires with much improved compositional uniformity can be achieved in a new growth paradigm, wherein a precise control on the optical bandgap of ternary AlGaN nanowires can be achieved by varying the substrate temperature. AlGaN nanowire LEDs, with emission wavelengths spanning from 236 to 280 nm, are also demonstrated. [ABSTRACT FROM AUTHOR]