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Background: The aim of the study is to analyse the demographic and anatomical details of the Huschke's foramen (HF) which have not been previously studied and to present a new clinical perspective.Materials and Methods: Multidetector computed tomography (MDCT) images of 495 patients were retrospectively evaluated. Presence of a HF, its' size, relations to side, age and gender were noted for every patient. Size of the foramen was measured in the axial plane, as well as on the reconstructed coronal and sagittal planes.Results: Of the 495 patients 99 (20%) had HF. There was no significant difference between females and males according to the presence of the HF and the side of the HF. When the dimension of the left- and the right-sided HFs were compared, there were no significant differences on none of the axes for the patients with unilateral or bilateral HF. There was no significant linear correlation between age and the dimension in the axial axis, the dimension in the sagittal axis and the dimension in the coronal axis CONCLUSIONS: The present work presenting morphologic and statistical variables of HF provides data for further studies which will indicate risk factors of herniation through HF. By the aid of MDCT, which is sensitive method for detection of the HF because of its thin sections, high spatial resolution, and multiplanar capabilities, lesions which were previously diagnosed as dehiscence were found to be defects. [ABSTRACT FROM AUTHOR]

This paper has reported the fabrication and characterization of pristine, and silver (Ag)-doped nanostructured ZnO/CuO composite thin films that have not been previously reported. The thin films were synthesized by the successive ionic layer adsorption and reaction (SILAR) technique. The morphological, crystalline structure, optical and electrical characterizations of the films have been achieved utilizing scanning electron microscopy (SEM), energy-dispersive spectrometry (EDS), atomic force microscopy (AFM), X-ray diffraction (XRD) analysis, Fourier transform ınfrared spectrum (FTIR) analysis, ultraviolet–visible (UV–Vis) spectrophotometry and the four-point probe measurements. Particle sizes of pristine and Ag-doped ZnO/CuO thin films were found to vary from 32 to 58 nm. Crystallite size was changed from 16.40 to 18.90 nm with changing Ag dopant in the ZnO/CuO composite film. FTIR spectra that have the absorption peaks at ~ 725 and ~ 510 cm−1 referred to the stretching vibration of Zn–O and Cu–O bonds during the synthesis of ZnO/CuO nanofilms. The bandgap values of ZnO/CuO composite films increased from 2.05 to 2.36 eV as Ag content increased from 0 to 2 M%. The activation energies of the samples were obtained from the Arrhenius plots of σ versus 1/T. The multiple activation process was observed. It was noteworthy that Ag-doping results in a significant difference in conductivity at all temperature values. [ABSTRACT FROM AUTHOR]

In this study, we investigated the electrical properties of Sn/SiOxNy/p-Si metal-insulator layer-semiconductor (MIS) structure. Silicon oxynitride (SiOxNy) thin film was grown on chemically cleaned p-Si substrate by the plasma nitridation process. The chemical composition and surface morphology of the thin film were analyzed using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Electrical measurements of the devices (e.g. current-voltage (I-V ), capacitance-voltage (C-V ), capacitance and conductance-frequency characteristics (C-f and G-f )) were performed at room temperature. The characteristic parameters of the SiOxNy/p-Si interface such as energy position, interface state density and relaxation time constant were obtained from admittance measurements over a wide range of frequencies (from 1 to 500 kHz) for the values of the forward bias between 0.0 V ≤ V ≤ 1.1 V. The values of the interface state density and their relaxation time constant changed from 3.684 × 1013 cm− 2 eV− 1 to 3.216 × 1012 cm− 2eV− 1 and from 1.770 × 10− 5 s to 6.277 × 10− 7 s, respectively. The obtained values of the interface state density were compared to those of the oxides grown by the other techniques. The experimental results clearly show that the density and location of interface states has a significant effect on electrical characteristics of the MIS structure. [ABSTRACT FROM AUTHOR]

Awake craniotomy is a special method to prevent motor deficits during the resection of lesions that are located in, or close to, functional areas. Although it is more commonly performed in adult patients, reports of pediatric cases undergoing awake craniotomy are limited in the literature. In our clinic, where we frequently use awake craniotomy in adult patients, we performed this method in 2 selected pediatric cases for lesion surgery. At an early age, these 2 cases diagnosed with epilepsy presented cerebral lesions, but since the lesions enclosed functional areas, surgical resection was not regarded as a treatment option at this time. In these 2 pediatric cases, we successfully completed lesion surgery with awake craniotomy. The method and the techniques employed during surgery are presented concomitant with other reports in the literature. © 2016 S. Karger AG, Basel [ABSTRACT FROM AUTHOR]

Thin films of polyaniline (PANI) titanium dioxide (TiO) nanocomposites prepared with and without surfactant (tetradecyltrimethylammonium bromide, TTAB) were formed by spin coating onto chemically cleaned p-type silicon substrates. The current-voltage characteristics of the Au/PANI TiO/ p- Si/Al and Au/PANI TiO TTAB/ p- Si/Al heterojunctions had rectifying behavior with the potential barrier formed between the polymeric thin films and p- Si semiconductor, and they were analyzed on the basis of the standard thermionic emission (TE) theory. Cheung functions combined with conventional forward I- V characteristics were used to obtain diode parameters such as barrier height, ideality factor and series resistance ( R). The values of barrier height, ideality factor and R were found as 0.496±0.003 eV, 2.313±0.067 and 23.633±7.554 Ω for the Au/PANI TiO/ p- Si/Al device; 0.494±0.003 eV, 2.167±0.018 and 12.929±2.217 Ω for the Au/PANI TiO TTAB/ p- Si/Al device. In addition, the energy distributions of the interface state density of the devices were determined from the forward I- V characteristics by taking into account the bias dependence of the ideality factor and barrier height. It was seen that the PANI TiO TTAB/ p- Si device had slightly higher interface state density values than those of the PANI TiO/ p- Si device. [ABSTRACT FROM AUTHOR]

The article focuses on the effect of Ranunculus constantinopolitanus, an alternative herbal remedy for curing rheumatological joint pain in Turkey. Drawn from the data gathered by the researchers in the country, R. constantinopolitanus is found to have a tendency to cause phytocontact dermatitis as manifested by the nine cases reported in conjunction to such inflammation.