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This investigation showcases the viability of producing SixGe1−x bulk single crystals via the Czochralski technique. A high Si content in Ge-rich SiGe wafers is highly desirable for various applications in quantum technology, particularly as strain-relaxed buffers for the realization of hole spin qubits in strained Ge quantum well heterostructures. The focus lies on the bulk crystal growth of such materials and their chemical and structural quality. For this, the Czochralski process, starting from a highly pure Ge seed and melt, utilizing continuous feeding by dissolution of Si rods was performed.Si0.16Ge0.86 wafers with a diameter of up to 15 mm obtained from the bulk crystal exhibited homogeneous structural quality in contrast to the conventionally used epitaxial strain-relaxed SiGe buffers. The compositional fluctuations of Si measured throughout the wafer were below 0.4 at. % in addition to a dislocation density below 3 × 106 dislocations/cm2. Interestingly, the central region of the wafer displayed no measurable compositional fluctuations and contained less than 105 dislocations/cm2. Furthermore, the difficulties and limits of growing such SiGe crystals are discussed, such as the continuous dissolution of Si during growth and the formation of oxides in the melt during growth. The current observations indicate significant potential for further enhancement of the crystal quality and to realize higher Si concentrations using the Czochralski technique. [ABSTRACT FROM AUTHOR]

Dark field x-ray microscopy (DXFM) can visualize microstructural distortions in bulk crystals. Using the femtosecond x-ray pulses generated by x-ray free-electron lasers (XFELs), DFXM can achieve sub-μm spatial resolution and <100 fs time resolution simultaneously. In this paper, we demonstrate ultrafast DFXM measurements at the European XFEL to visualize an optically driven longitudinal strain wave propagating through a diamond single crystal. We also present two DFXM scanning modalities that are new to the XFEL sources: spatial 3D and 2D axial-strain scans with sub-μm spatial resolution. With this progress in XFEL-based DFXM, we discuss new opportunities to study multi-timescale spatiotemporal dynamics of microstructures. [ABSTRACT FROM AUTHOR]

Iron will undergo the BCC to HCP transformation under pressure, but the reverse process during the unloading path has not been fully revealed on the atomic scale. This work investigated the unloading dynamics of a HCP single crystal of iron, focusing on the microstructure evolution and related mechanical characteristics. For unloading along the normal direction of the ( 1 ¯ 2 1 ¯ 0) and (10 1 ¯ 0) planes, a mechanism for coupling between twinning and phase transformation was reported. The HCP to BCC transformation with the rod-like structure and twinning was revealed, which was well supported by previous experiments. For unloading along the normal direction of the (0001) plane, the HCP–FCC–BCC transition was observed. Significant shear stress was generated internally, leading to significant dislocations. There are multiple transition paths of the HCP to FCC phase, resulting in the formation of grain boundaries and ultimately leaving the polycrystalline structures. This process was accompanied by coupled development of dislocations, grain mergers, and phase transitions. As the unloading process gradually evolves into the stretching process, detwinning and reconstruction will occur for unloading along the normal direction of the ( 1 ¯ 2 1 ¯ 0) and (10 1 ¯ 0) planes, accompanied by grain rotation. [ABSTRACT FROM AUTHOR]

The CsPbBr3 single crystal detector emerges as a highly promising candidate among semiconductor nuclear radiation detectors, which exhibits an extensive potential application across a multitude of critical domains, particularly in nuclear physics, nuclear energy, nuclear medicine, etc. However, the polarization problem has limited the application and development of CsPbBr3 detectors and has even posed a significant hindrance to their practical implementation. In this paper, a pre-designed SnO2/CsPbBr3 hetero-junction was meticulously engineered at the interface of the Ti/CsPbBr3/Ti detector, aiming to solve the polarization problem. This paper investigates the effects of the SnO2/CsPbBr3 hetero-junction on the electrical characteristics, detection performance, and long-term stability of the detector. The final results demonstrated that the SnO2/CsPbBr3 hetero-junction had multiple beneficial effects on the CsPbBr3 detector. On the one hand, the SnO2/CsPbBr3 hetero-junction exhibited superior electron extraction efficiency when compared to the Ti/CsPbBr3 interface. On the other hand, the SnO2 layer played a crucial role in preventing the migration of ions from the CsPbBr3 crystal to the interface, as well as in blocking the permeation of atmospheric and moisture elements from the detector surface to the interface. Consequently, the SnO2/CsPbBr3 hetero-junction detector exhibited superior detection performance and enhanced long-stability when compared to the Ti/CsPbBr3/Ti detector. After the interface enhancement, the SnO2/CsPbBr3 hetero-junction detector achieved an improved energy resolution of 13.59% at an electric field of 6000 V/cm and maintained a stable energy resolution of approximately 24 ± 5% at 3000 V/cm for over 12 h. The study of the SnO2/CsPbBr3 hetero-junction detector in this work provided a new perspective for enhancing the detection performance and ensuring the long-term stability of CsPbBr3-based detectors. [ABSTRACT FROM AUTHOR]

In this paper, we demonstrate a novel strategy to introduce Fe into a Bi 2 Se 3 system through growth of crystals with nominal composition (FeSe) x Bi 2 Se 3. For x < 0.04 , Fe is shown to act mostly as a non-magnetic impurity; it uniformly enters the lattice and monotonically increases the c -lattice parameter, electronic doping level, and Shubnikov–de Haas mobility. The most striking observation is the record high Hall mobility of 8600 cm 2 /V s at 4.2 K for the smallest FeSe content (x = 0.002) that further decreases with x. Elevated mobility is accompanied by a high residual resistance ratio and a rather moderate shift of Shubnikov–de Haas oscillations to a smaller field. These findings indicate that Fe admixture cures the point defects in Bi 2 Se 3 and, thus, opens an effective way to suppress the defect subsystem in Bi 2 Se 3 -based topological insulator materials. [ABSTRACT FROM AUTHOR]

Zinc single crystals have been shocked by planar impact along the [ 10 1 ¯ 0 ] axis as well as in the off-axis direction. The evolution of compression waves has been analyzed from the free surface velocity profiles of zinc single crystal samples. A slip on the primary system is activated by impact loading in directions making angles of θ = 17°–64° with respect to the [ 10 1 ¯ 0 ] axis. The phenomenon of the formation of two plastic compression waves propagating at different velocities is observed in samples oriented at angles of 53° and 64°. The spall fracture of single crystal zinc samples oriented in different directions has been measured. It is shown that the highest value of spall strength is recorded along the highly symmetric axis of the crystal. The experimental results presented are consistent with the data published in the scientific literature on beryllium and magnesium and confirm the important role of crystalline anisotropy in the process of inelastic deformation of single crystals. [ABSTRACT FROM AUTHOR]

In this work, the first fabrication and investigation of normally-off single crystal hydrogen-sterminated diamond MOSFETs with Ga2O3 dielectric has been successfully carried out. 50-nm-thick Ga2O3 was deposited by electron-beam evaporation technique at room temperature. The maximum drain current was −36 mA/mm, which was 164 times larger than previous work. Based on the transfer characteristic curve, the threshold voltage, on/off ratio and extrinsic transconductance were −0.37 V, 2.3 × 107, and 9.8 mS/mm, respectively. The effective mobility of the MOSFET was calculated to be 264.1 cm2/V ⋅s at VGS = − 1 V. This work may significantly promote the application of H-diamond FETs. [ABSTRACT FROM AUTHOR]

This study presents systematic investigations into the growth and physical properties of EuAl3Si single crystals, encompassing magnetic, transport, and thermodynamic analyses. EuAl3Si undergoes a ferromagnetic transition at TC = 15 K. A significant reversible magnetocaloric effect was observed around TC. Strikingly, with a small change of magnetic field 2 T, the maximum values of magnetic entropy change (13.4 J/kg K), refrigerant capacity (166 J/kg), and adiabatic temperature change (7.2 K) are found. These parameters, respectively, are 60%, 148%, and 64% larger than those of the parent compound EuAl4 and suggest EuAl3Si as an excellent candidate for magnetic-refrigeration applications near the temperature of liquid hydrogen. The possible mechanism for this enhancement is also discussed. [ABSTRACT FROM AUTHOR]

The search for and fabrication of materials for the near-infrared range of the spectrum, including telecommunication windows, is an extremely important task in modern technology. This work presents the results of studies on the photoluminescence of CsPbCl3 single crystals with varying contents of ytterbium and erbium impurities, grown using the Bridgman method. The existence of electrically neutral Yb3+–VPb–Er3+ complexes within the crystal structure was confirmed. Resonant absorption of excitation radiation λ = 980 nm by Yb3+ ions reveals a three-step energy transfer channel from Yb3+ to Er3+ ions within a single complex. The estimated quantum yield of up-conversion luminescence at λ = 524 nm (0.02%) associated with erbium ions indicates the presence of electronic transitions to higher energy levels, with the possibility of subsequent emission within the third telecommunication window. [ABSTRACT FROM AUTHOR]

High-performance relaxor ferroelectric single crystals, such as Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT), play a crucial role in the applications of medical ultrasonic imaging due to their high piezoelectric properties. In this study, we successfully grew a 2-in. Eu-doped PMN–PT single crystal whose composition variation and electrical properties were systematically investigated. It was found that the PT content of the crystal boule increased gradually along the growth direction, while the change of Eu3+ content was opposite. The property results show that Eu-doped PMN–PT single crystals exhibit a remarkable piezoelectric coefficient of 3300 pC N−1 at DC-poling while maintaining the rhombohedral phase to a tetragonal phase transition temperature (TRT) at 88 °C and the coercive field (EC) at 2.7 kV cm−1, higher to the undoped single crystals. Through the study of the local structure of Eu-PMN–PT, it illustrated that the introduction of Eu3+ increased the standard deviation of an A sublattice from 3.0% to 4.8%. The dopant simultaneously enhanced a tetragonal phase ratio and local structural heterogeneity, resulting in improved piezoelectric properties and temperature stability of the crystal. We further treated the doped crystals with AC-poling to obtain ultrahigh piezoelectric performance (d33 > 4000 pC N−1) and high transparency. This work provides a new approach to achieve a relaxor ferroelectric single crystal with high performance and transparency with good temperature stability, which could be the material of choice for optoelectronic devices in the future. [ABSTRACT FROM AUTHOR]

Metallic nanolaminates are promising materials for nuclear applications due to their ability to withstand extreme radiation environments by trapping irradiation-induced defects. However, the effects of irradiation-induced voids on confined layer slips (CLS) in nanolaminates remain largely unexplored. In this study, molecular dynamics simulations are employed to investigate how void size and location impact CLS in two types of Ag/Cu nanolaminates. Nanolaminated Ag and Ag single crystals are also studied as references. The results show that voids act as obstacles, significantly increasing the critical stress for dislocation glide. The void location plays a role in the critical stress but in different ways for different slip planes. The void-induced hardening is stronger on planes with lower intrinsic critical stress; as a result, adding a void homogenizes the resistance to CLS across different slip planes. Ag/Cu type II nanolaminates, where the two crystals have a "cube-on-cube" crystallographic orientation, demonstrate reduced void-induced hardening compared to type I, where two adjacent layers possess differing crystallographic orientations. In addition, some void-containing nanolaminated Ag show lower critical stress than their single-crystal line counterparts. [ABSTRACT FROM AUTHOR]

Titanium dioxide (TiO2) and strontium titanate (SrTiO3) are widely used photocatalytic materials in photoelectrochemical (PEC) water-splitting processes. Recent advancements have aimed at improving energy conversion efficiency by loading cobalt oxide (CoOx) cocatalysts onto these materials' surfaces to enhance O2 evolution and capture photogenerated holes. Charge carrier recombination plays a crucial role in PEC reactions. This investigation explores the impact of CoOx loading on various crystal faces on the charge carrier recombination dynamics in TiO2 and SrTiO3 single crystals using the microwave photoconductivity decay (μ-PCD) technique. The results indicate that CoOx loading increases the charge carrier recombination for both TiO2 and SrTiO3 across all crystal faces, as observed from the decay curves. Additionally, different tendencies of the injected photon density and temperature dependence of the carrier lifetime, derived from μ-PCD curves, reveal that CoOx loading on TiO2 surfaces introduces the new surface recombination center that dominates the charge carrier recombination. In contrast, for SrTiO3, the surface recombination center remains unchanged across all crystal faces. Consequently, these findings suggest that while CoOx loading on SrTiO3 surfaces does not affect the charge carrier dynamics and remains effective for water splitting, it poses a risk of enhancing carrier recombination and reducing efficiency in TiO2. [ABSTRACT FROM AUTHOR]

The article discusses a theoretical and experimental investigation of the reflection of slow electrons from the surfaces of single-crystal and polycrystalline tungsten thermionic cathodes. The findings challenge traditional ideas as they confirm that the effective reflection coefficient, reff, can reach values close to unity contrary to prior belief. The reason for this occurrence has been established, which is the additional reflection of slow electrons from a potential barrier near polycrystalline surfaces. A method has been developed to separately measure electron reflection coefficients at the surfaces of thermionic cathodes and at the potential barrier of electrode spot fields with different work functions. The study reveals that the maximum values of reff are achieved on polycrystalline surfaces. Additionally, the work functions and reflection coefficients rhkl have been determined for the faces of single crystals of (110), (112), (100), (111), and (116) oriented tungsten. The proposed method enables control over cathode emission inhomogeneity and makes it possible to mitigate the negative effects of secondary electron emission by suppressing electric fields near the cathode surface. [ABSTRACT FROM AUTHOR]

Despite the overwhelming success of organic–inorganic metal halide perovskites in the field of energy harvesting, many of the aspects of these materials are not well understood even now. Specifically, the origin of multiple peaks emergence in photoluminescence (PL) spectra is widely debated. In the present work, emission spectra of mix halide perovskites, MAPb(Br1−xClx)3 (x = 0–1) on single crystal samples, have been investigated in detail. In addition to the band-to-band transition peak, two other peaks were observed. The amplitude of these two additional peaks appears to be strongly dependent on halide composition. Observed extra peaks in PL spectra were seen to be less pronounced in the pure end compositions (x = 0 and 1) and intense for intermediate compositions. It has been observed that multiple peaks seen in the bulk emission spectra are closely related to the coordination chemistry of a halide anion. X-ray absorption near edge spectroscopy indicated the existence of a different environment for the bromine anion, which might be responsible for the modification in the electronic structure with the change in halide composition. This modification in the electronic structure is suggested to be responsible for the appearance of debated multiple peak emissions in the PL spectra. These results are anticipated to pave the way for further research to enhance the understanding of the optoelectronic properties of mixed halide perovskites. [ABSTRACT FROM AUTHOR]

Yttria-stabilized zirconia (YSZ) is found in a wide range of applications, from solid-oxide fuel cells to medical devices and implants. A molecular-level understanding of the hydration of YSZ surfaces is essential for optimizing its performance and durability in these applications. Nevertheless, only a limited amount of literature is available about the surface hydration of YSZ single crystals. In this study, we employ surface-sensitive non-linear vibrational sum frequency generation spectroscopy to investigate the hydration of YSZ(100), (110), and (111) single crystal substrates under ambient laboratory conditions. Three types of hydroxyl groups were identified at all three YSZ–D2O interfaces: (i) hydroxyls on the metal sites of Zr or Y resulting from the dissociative chemisorption of water, (ii) hydroxyls from proton adsorption to O sites formed from water dissociation, and (iii) hydroxyl groups as part of the physisorbed water at the interface. [ABSTRACT FROM AUTHOR]

Electrocaloric effects of adiabatic temperature change via the application of external electric fields are explored for energy-efficient solid-state refrigeration. These effects are typically estimated from the thermodynamic analyses of polarization and field in electrocaloric materials, which implies that higher field application gives larger temperature changes. However, this may not be always true. Here, using both indirect and direct methods, we report an anomalous effect where larger thermal changes occur by applications of lower fields in a multi-domain BaTiO3 (001) single crystal. A large temperature change of 1.9 K under a low field change of 8 kV/cm at 404 K is observed in a multi-domain BaTiO3 (001) single crystal in comparison to that of 1.4 K at a high field change of 30 kV/cm. We attribute this counterintuitive effect to the interplay of the c- and a-domains in the BaTiO3 (001) single crystal under the influence of temperature and field changes. This work provides a fundamental understanding of the complex role of domains in governing the electrocaloric response of ferroelectric materials which is often overlooked but critical for their practical applications. [ABSTRACT FROM AUTHOR]

Metal halide perovskite materials (MHPs) are promising for several applications due to their exceptional properties. Understanding excitonic properties is essential for exploiting these materials. For this purpose, we focus on CsPbBr3 single crystals, which have higher crystal quality, are more stable, and have no Rashba effect at low temperatures compared to other 3D MHPs. We have estimated exciton energy positions, longitudinal-transverse splitting energy, and damping energy using low-temperature reflection spectra. Under high excitation intensity, two biexciton emissions (M-emission) and exciton–exciton scattering emission (P-emission) were observed. We assign the two M-emissions to the emission to the states of longitudinal and transverse excitons, i.e., ML and MT emissions. From the energy position of the MT emission, the biexciton binding energy has been estimated to be ∼2 meV. By analyzing P-emission obtained from the back side of the sample, we have estimated the exciton binding energy to be 17.8–23.7 meV. This estimation minimizes the influence of the wavenumber distribution in the scattering process. In addition, time-resolved transmittance measurements using pulsed white light have revealed the group velocity dispersion. Comparing experimental results with theoretical calculations using the Lorentz model clarifies that exciton dynamics in CsPbBr3 can be described with a simple Lorentz model. These insights enhance the understanding of exciton behavior and support the development of exciton-based devices using MHPs. [ABSTRACT FROM AUTHOR]

To maximize the piezoelectric performance of Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) single crystals, a pulse poling (PP) method is proposed in this study. This study investigates the effects of pulse poling on the piezoelectric and dielectric properties of these PMN–PT single crystals and explores the polarization rotation mechanisms. Our findings indicate a significant improvement in the piezoelectric properties postpulse poling. The optimal PP conditions are identified as 30 pulse numbers at a pulsed electric field of 5 kV/cm. The dielectric constant ɛT33/ɛ0 and piezoelectric coefficient d33 of PMN–0.28PT post PP are 7000–7700 and 2200–2530 pC/N, respectively, representing increases of 49% and 66% compared with those of postdirect current poling (DCP). Additionally, the domain structures of the PMN–0.28PT single crystals after various DCP and PP treatments are examined and compared using piezoelectric force microscopy. The enhanced piezoelectric properties are attributed to the finer domain structures, as well as increased domain wall density achieved through PP. This research introduces a novel domain engineering approach to improve the electromechanical properties of relaxor ferroelectric single crystals. [ABSTRACT FROM AUTHOR]

We explored the feasibility of generating a coherent longitudinal optical (LO) phonon–plasmon coupled mode in an n-type InSb single crystal with the condition that the photo-Dember effect is strongly suppressed and/or eliminated. We systematically performed terahertz time-domain spectroscopic measurements of the n-type InSb single crystal and undoped InSb crystal. The terahertz electromagnetic wave originating from the photo-Dember effect was extinguished in the n-type InSb single crystal, while the clear signal from the photo-Dember effect was detected in the undoped InSb single crystal. Meanwhile we detected the clear signal of the terahertz wave from the coherent LO-phonon–plasmon coupled mode in the n-type InSb single crystal, indicating that the photo-Dember effect is not dominant in the generation of the coherent LO-phonon–plasmon coupled mode although the photo-Dember effect has been attributed to the dominant generation mechanism of the coherent LO-phonon–plasmon coupled mode so far. We explain the present phenomenon, taking account of the fact that the impulsive stimulated Raman scattering process has a possibility of generating coherent LO-phonon–plasmon coupled modes in light-absorbing solids [Nakamura et al., Phys. Rev. B 99, 180301(R) (2019)]. [ABSTRACT FROM AUTHOR]

The configuration of a high-quality security system or computer using a Monte Carlo simulation high-quality random-number generator has been expected. The high-quality random-number generators are obtained using physical randomness phenomena. In particular, chaos is an appropriate random-number generator. First, we investigate the chaotic behavior in the Josephson junction (JJ) under irradiation with external radio frequency (RF) at 77 K using an equivalent circuit of the JJ. JJ is assumed to be an intrinsic JJ in a Bi 2 Sr 2 CaCu 2 O 8 + δ single crystal. The output voltages of the JJ behave chaotic under some conditions and are evaluated using the Lyapunov exponent, Poincaré section, and attractors. Next, random numbers were generated from the chaotic output voltage in rgw JJ under irradiation with RF and evaluated by a verification test. Thus, random-number generators can be applied using the output voltage of theJJ under irradiation with external RF. [ABSTRACT FROM AUTHOR]

Laser-driven shock compression enables an experimental study of phase transitions at unprecedented pressures and temperatures. One example is the shock Hugoniot of magnesium oxide (MgO), which crosses the B1–B2-liquid triple point at 400–600 GPa, 10 000–13 000 K (0.86–1.12 eV). MgO is a major component within the mantles of terrestrial planets and has long been a focus of high-pressure research. Here, we combine time-resolved velocimetry and pyrometry measurements with a decaying shock platform to obtain pressure–temperature data on MgO from 300 to 1500 GPa and 9000 to 50 000 K. Pressure–temperature–density Hugoniot data are reported at 1500 GPa. These data represent the near-instantaneous response of an MgO [100] single crystal to shock compression. We report on a prominent temperature anomaly between 400 and 460 GPa, in general agreement with previous shock studies, and draw comparison with equation-of-state models. We provide a detailed analysis of the decaying shock compression platform, including a treatment of a pressure-dependent optical depth near the shock front. We show that if the optical depth of the shocked material is larger than 1 μm, treating the shock front as an optically thick gray body will lead to a noticeable overestimation of the shock temperature. [ABSTRACT FROM AUTHOR]

Ferroelectric domain walls (DWs) are promising structures for assembling future nano-electronic circuit elements on a larger scale since reporting domain wall currents of up to 1 mA per single DW. One key requirement hereto is their reproducible manufacturing by gaining preparative control over domain size and domain wall conductivity (DWC). To date, most works on DWC have focused on exploring the fundamental electrical properties of individual DWs within single-shot experiments, with an emphasis on quantifying the origins of DWC. Very few reports exist when it comes to comparing the DWC properties between two separate DWs, and literally nothing exists where issues of reproducibility in DWC devices have been addressed. To fill this gap while facing the challenge of finding guidelines for achieving predictable DWC performance, we report on a procedure that allows us to reproducibly prepare single hexagonal domains of a predefined diameter into uniaxial ferroelectric lithium niobate single crystals of 200 and 300 μ m thickness, respectively. We show that the domain diameter can be controlled with an uncertainty of a few percent. As-grown DWs are then subjected to a standard procedure of current-limited high-voltage DWC enhancement, and they repetitively reach a DWC increase of six orders of magnitude. While all resulting DWs show significantly enhanced DWC values, their individual current–voltage (I–V) characteristics exhibit different shapes, which can be explained by variations in their 3D real structure reflecting local heterogeneities by defects, DW pinning, and surface-near DW inclination. [ABSTRACT FROM AUTHOR]

The dynamics of spin and charge-ordered phases in La1.67Sr0.33NiO4 single crystal have been investigated using high-frequency dielectric spectroscopy. The measurements were carried out in frequencies between 0.156 and 316 MHz and temperatures from 50 to 320 K. The intrinsic part of the response by excluding the Maxwell–Wagner relaxation region is obtained below TSDW ∼ 120 K. The intrinsic frequency-dependent real dielectric constant ɛ′ and conductivity σ′ can be well described in terms of the constant phase element revealing a complex charge-hopping process. Our results are in agreement with the spin-density-wave puddles' picture observed by the scanning micro-x-ray diffraction technique. These demonstrate that high-frequency dielectric spectroscopy can be utilized for investigating the various order phases in other transition metal oxides by considering their intrinsic responses. [ABSTRACT FROM AUTHOR]

We have applied positron annihilation spectroscopy to study the vacancy-type defects in β-Ga2O3 single crystals. The three different types of crystals were prepared by Czochralski and edge-defined film-fed growth and doped with Fe, Mg, and Sn for semi-insulating and n-type characteristics. The crystals were also subjected to 6-MeV proton irradiation for controlled introduction of mono-vacancy defects. Positron lifetime and the details of the anisotropy of the Doppler broadening signals were measured as a function of temperature, and the results were compared with the annihilation signals predicted by theoretical calculations. We find Ga vacancies in all three basic split Ga vacancy configurations to dominate the positron data in the as-grown crystals. In contrast, unrelaxed Ga vacancies are found as the main defect introduced by the irradiation. [ABSTRACT FROM AUTHOR]

Magnons are quasiparticles of spin waves, carrying both thermal energy and spin information. Controlling magnon transport processes is critical for developing innovative magnonic devices used in data processing and thermal management applications in microelectronics. The spin ladder compound S r 14 C u 24 O 41 with large magnon thermal conductivity offers a valuable platform for investigating magnon transport. However, there are limited studies on enhancing its magnon thermal conductivity. Herein, we report the modification of magnon thermal transport through partial substitution of strontium with yttrium (Y) in both polycrystalline and single crystalline S r 14 − x Y x C u 24 O 41. At room temperature, the lightly Y-doped polycrystalline sample exhibits 430% enhancement in thermal conductivity compared to the undoped sample. This large enhancement can be attributed to reduced magnon-hole scattering, as confirmed by the Seebeck coefficient measurement. Further increasing the doping level results in negligible change and eventually suppression of magnon thermal transport due to increased magnon-defect and magnon-hole scattering. By minimizing defect and boundary scattering, the single crystal sample with x = 2 demonstrates a further enhanced room-temperature magnon thermal conductivity of 19 W m − 1 K − 1 , which is more than ten times larger than that of the undoped polycrystalline material. This study reveals the interplay between magnon-hole scattering and magnon-defect scattering in modifying magnon thermal transport, providing valuable insights into the control of magnon transport properties in magnetic materials. [ABSTRACT FROM AUTHOR]

The multiferroic Y-type hexaferrites BaxSr2−xMe2Fe12−yAlyO22 (Me = Zn2+, Co2+, Mg2+, etc.) have attracted much attention due to their giant magnetoelectric (ME) effect up to room temperature and low modulated magnetic field by the chemical doping control of the complex magnetic phases. However, the research of substitution between the Me ions is rare. As doping at the Me ion site can combine the advantages of both, e.g., higher magnetic ordering temperature in Co2 and stronger ME coefficient in Mg2 Y-type hexaferrites, herein, we report the stability and switching of magnetoelectric states in the Y-type hexaferrites Ba0.5Sr1.5CoMgFe11AlO22 single crystals. Our results demonstrate that substituting half of the Mg2+ with Co2+ enhances the transition temperature of the alternating longitudinal conical phase to proper screw spin order up to room temperature compared to those Mg2 Y-type hexaferrites. Simultaneous occurrence of in-plane and out-of-plane ferroelectric polarization is observed, alongside comparable spontaneous magnetization. It was found that the in-plane spin-driven polarization can be reversible below 50 K with a substantial ME coefficient α = −8000 ps/m but becomes irreversible at 100 K. This reversal in the sign of the ME coefficient signifies the transition between two distinct ME states at high temperature. The reversibility and irreversibility of spin-induced polarization are discussed within the framework of free energy based on the ferroelectric phase, which prevail in numerous Y-type hexaferrites. Our results provide insights into understanding the role of the Me ions in the magnetoelectric coupling in Y-type hexaferrites. [ABSTRACT FROM AUTHOR]

The unique ability of ferroelectrics to generate high voltage under shock loading is limited by electrical breakdown within the shock-compressed ferroelectric material. Breakdown is a hybrid process of initiation and growth. The possible mechanisms of electrical breakdown in ferroelectric films and bulk ceramics subjected to high-pressure shock loading are discussed and experiments designed to elucidate which mechanisms govern breakdown. Gigapascal shock loading experiments were performed on poled Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 ferroelectric film specimens in the range of 32–156 μm thickness to determine the dependence of the breakdown field on thickness and on film specimens in the range of 4–16 mm length to determine the dependence of the breakdown field on the duration of shock compression. The resulting breakdown-field vs thickness and breakdown-field vs shock transit time dependencies are consistent with a hybrid electron emission initiation and Joule heating microchannel growth mechanism. Further analysis of data previously obtained on shock-compressed 0.27Pb(In1/2Nb1/2)O3–0.47Pb(Mg1/3Nb2/3)O3–0.26PbTiO3 ferrvoelectric single crystals and Pb(Zr0.65Ti0.35)O3, Pb0.99(Zr0.52Ti0.48)0.99Nb0.01O3, Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 bulk ceramics is consistent with this dual mechanism. It appears that neither chemical composition nor microstructure (single crystal vs polycrystalline) of the ferroelectric material has a significant effect on the breakdown mechanism in shocked ferroelectrics. [ABSTRACT FROM AUTHOR]

Solid–water interfaces are ubiquitous in nature and technology. In particular, technologies evolving in the green transition, such as electrocatalysis, heavily rely on the junction of an electrolyte and an electrode as a central part of the device. For the understanding of atomic-scale processes taking place at the electrolyte–electrode interface, density functional theory (DFT) has become the de facto standard. The validation of DFT's ability to simulate the interfacial solid/water interaction is crucial, and ideal simulation setups need to be identified in order to prevent avoidable systematic errors. Here, we develop a rigorous sampling protocol for benchmarking the adsorption/desorption energetics of water on metallic surfaces against experimental temperature programmed desorption, single crystal adsorption calorimetry, and thermal energy atom scattering. We screened DFT's quality on a series of transition metal surfaces, applying three of the most common exchange–correlation approximations: PBE-D3, RPBE-D3, and BEEF-vdW. We find that all three xc-functionals reflect the pseudo-zeroth order desorption of water rooted in the combination of attractive adsorbate–adsorbate interactions and their saturation at low and intermediate coverages, respectively. However, both RPBE-D3 and BEEF-vdW lead to more accurate water adsorption strengths, while PBE-D3 clearly overbinds near-surface water. We relate the variations in binding strength to specific variations in water–metal and water–water interactions, highlighting the structural consequences inherent in an uninformed choice of simulation parameters. Our study gives atomistic insight into water's complex adsorption equilibrium. Furthermore, it represents a guideline for future DFT-based simulations of solvated solid interfaces by providing an assessment of systematic errors in specific setups. [ABSTRACT FROM AUTHOR]

Piezoresponse force microscopy (PFM) is one of the most widespread methods for investigating and visualizing ferroelectric domain structures down to the nanometer length scale. PFM makes use of the direct coupling of the piezoelectric response to the crystal lattice, and hence, it is most often applied to spatially map the three-dimensional (3D) near-surface domain distribution of any polar or ferroic sample. Nonetheless, since most samples investigated by PFM are at least semiconducting or fully insulating, the electric ac field emerging from the conductive scanning force microscopy (SFM) tip penetrates the sample and, hence, may also couple to polar features that are deeply buried into the bulk of the sample under investigation. Thus, in the work presented here, we experimentally and theoretically explore the contrast and depth resolution capabilities of PFM, by analyzing the dependence of several key parameters. These key parameters include the depth of the buried feature, i.e., here a domain wall (DW), as well as PFM-relevant technical parameters such as the tip radius, the PFM drive voltage and frequency, and the signal-to-noise ratio. The theoretical predictions are experimentally verified using x-cut periodically poled lithium niobate single crystals that are specially prepared into wedge-shaped samples, in order to allow the buried feature, here the DW, to be "positioned" at any depth into the bulk. This inspection essentially contributes to the fundamental understanding in PFM contrast analysis and to the reconstruction of 3D domain structures down to a 1 μ m-penetration depth into the sample. [ABSTRACT FROM AUTHOR]

We have measured diffuse scattering in a single crystal of Cd0.9Zn0.1Te using a state-of-the-art laboratory diffractometer. A large-box atomistic simulation of a model crystal is used in conjunction with Monte Carlo modeling and the Kirkwood potential. A combination of structural relaxation in the presence of the dopant and thermal motion results in good qualitative agreement between the computed diffraction patterns of the model crystal and the measured x-ray patterns. This is shown to be rather distinct from the diffuse scattering arising from purely structural relaxations or thermal motion only. The atoms are shown to displace predominantly in ⟨1,1,1⟩ and ⟨1,0,0⟩ type directions. Our approach to Monte Carlo modeling can easily be extended to more complex defect structures to incorporate, e.g., chemical ordering on the Cd/Zn sublattice, more than one species of dopant or vacancies. [ABSTRACT FROM AUTHOR]

Single crystal Cr1.27Te2 samples were synthesized by using the chemical vapor transport method. Single crystal x-ray diffraction studies show a trigonal crystal structure with a P 3 ̄ m 1 symmetry space group. We then systematically investigate magnetic properties and critical behaviors of single crystal Cr1.27Te2 around its paramagnetic-to-ferromagnetic phase transition. The Arrott plot indicates a second-order magnetic phase transition. We estimate critical exponents β = 0.2631 ± 0.002, γ = 1.2314 ± 0.007, and TC = 168.48 ± 0.031 K by using the Kouvel–Fisher method. We also estimate other critical exponents δ = 5.31 ± 0.004 by analyzing the critical isotherm at TC = 168.5 K. We further verify the accuracy of our estimated critical exponents by the scaling analysis. Further analysis suggests that Cr1.27Te2 can be best described as a quasi-2D Ising magnetic system. [ABSTRACT FROM AUTHOR]

Achieving the formation of target open crystalline lattices from colloidal particles is of paramount importance for their potential application in photonics. Examples of such desired structures are the diamond, tetrastack, and pyrochlore lattices. Here, we demonstrate that the self-assembly of tetravalent patchy particles results in the selective formation of cubic tetrastack crystals, both in the bulk and in the systems subjected to external fields exerted by the solid substrate. It is demonstrated that the presence of an external field allows for the formation of well-defined single crystals with a low density of defects. Moreover, depending on the strength of the applied external field, the mechanism of epitaxial growth changes. For weakly attractive external fields, the crystallization occurs in a similar manner as in the bulk, since the fluid does not wet the substrate. Nonetheless, the formed crystal is considerably better ordered than the crystals formed in bulk, since the surface induces the ordering in the first layer. On the other hand, it is demonstrated that the formation of well-ordered cubic tetrastack crystals is considerably enhanced by the increase in external field strength, and the formation of the thick crystalline film occurs via a series of layering transitions. [ABSTRACT FROM AUTHOR]

We report the real-valued static and complex-valued quasi-static anisotropic permittivity parameters of rare-earth scandate orthorhombic single crystal GdScO3 (GSO), TbScO3 (TSO), and DyScO3 (DSO). Employing continuous-wave terahertz spectroscopy (0.2–1 THz), the complex permittivity was extracted using an anisotropic ambient-film-ambient model. Data obtained from multiple samples of the same oxides and different surface cuts were analyzed simultaneously. The zero-frequency limit of the modeled data indicates that at room temperature the real part of the dielectric tensor components for GSO are ɛa = 22.7, ɛb = 19.3, and ɛc = 28.1; for DSO, ɛa = 20.3, ɛb = 17.4, and ɛc = 31.1; and for TSO, ɛa = 21.6, ɛb = 18.1, and ɛc = 30.3, with a, b, and c crystallographic axes constituting the principal directions for the permittivity tensor. These results are in excellent agreement with expectations from theoretical computations and with scarcely available data from previous experimental studies. Furthermore, our results evidence a noticeable attenuation, which increases with frequency, and are very significant especially at the higher frequency end of the measurement and along the c-direction in all samples. We suggest the attenuation is most likely caused by the onset of absorption due to long-wavelength active optical phonon modes. These results are important for electronic and potential sub-terahertz applications (e.g., quarter-wave plate) benefiting from the large index contrast along different directions in these materials. [ABSTRACT FROM AUTHOR]

The Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) ferroelectric single crystals have been commercially available as important components in medical ultrasound transducers due to their excellent piezoelectric and electromechanical coupling performance. The variation in piezoelectric and dielectric properties of PMN-PT single crystals with ambient temperature is an important application indicator. In this work, the PMN-PT single crystals after direct current poling (DCP) and alternating current poling (ACP) were subjected to the cyclic thermal treatment process. The thermal cycling stability and microstructural changes in PMN-PT single crystals were investigated. The ACP single crystals exhibit a higher dielectric constant ε 33 T / ε 0 (6500–7600) and piezoelectric coefficient d33 (2100–2500 pC N−1) compared to the DCP single crystals (ε 33 T / ε 0 of 4100–5000, d33 of 1200–1300 pC N−1). Under thermal cycling at 60 °C, the DCP and ACP single crystals exhibit good thermal cycling stability after 150 cycles. Microstructural observations show that the domain structure of the DCP single crystals exhibits "staggered domain walls, inhomogeneous domain size, variety of domain structure," while the relatively homogeneous stripe-like domains were observed in the ACP single crystals. After thermal cycling, new fine striped domains appear in both the DCP and ACP single crystals due to the instability of rotated polarization, but the piezoelectric and dielectric properties are not greatly affected. This work provides an intensive understanding of the effects of thermal cycling on the domain structure, which is useful for applications. [ABSTRACT FROM AUTHOR]

The present study focuses on the oxygen (O)-ion implantation-induced structural and electronic modifications in the single crystals of strontium-titanate (s-STO) using synchrotron-based x-ray diffraction (XRD), x-ray photoemission spectroscopy (XPS), and resonant x-ray photoemission spectroscopy. The crystallinity of the epitaxially aligned phases of s-STO is confirmed through XRD. This direct evidence of heavy ion implantation is supported by the Monte Carlo-based simulation of stopping and range of ions in matter/transport of ions in matter. XPS at different core levels is performed to detect the exact oxidation state of Ti ions in s-STO. The dominance of Ti3+ over Ti4+ upon oxygen implantation suggests the disorder in the perovskite material, primarily in the form of oxygen vacancies (VO). The confirmation of VO is explicitly shown by the enhancement in the spectral area of the assigned peak in the O 1s XPS. Resonant photoemission spectroscopy measurements were performed by varying photon energy from 32 to 46 eV to understand the nature of the valence band electronic structure of s-STO. The resonance in the different hybridized states of s-STO is confirmed by the spectral features of constant initial state plots. There is a correlation between the defective state of Ti and the oxygen-deficient state. The transformation from SrTiO3 to SrTiO2.5, partially or completely, is essentially required to underline any modification in the electronic properties of s-STO. s-STO is in a mixed state of an ionic conductor and an electronic conductor. This study outlines the creation of VO due to O-ion implantation and investigates the changes in the electronic structures of s-STO. [ABSTRACT FROM AUTHOR]

Application of the coherent thermodynamic model [W. Holzapfel and S. Klotz, J. Chem. Phys. 155, 024506 (2021)] for H2O ice Ih to the more detailed data for D2O ice Ih provides better insight into the contributions from quenched proton disorder and offers a new basis for understanding the apparent differences between the data for thermal expansion measured with neutron diffraction on polycrystalline samples [A. Fortes, Acta Crystallogr., Sect. B: Struct. Sci., Cryst. Eng. Mater. 74, 196 (2018) and A. Fortes, Phys. Chem. Chem. Phys 21, 8264 (2019)] and macroscopic dilatation measurements on single crystals [D. Buckingham et al., Phys. Rev. Lett. 121, 185505 (2018)]. The comparison points to contributions from defects effecting the two techniques in different ways. The uncertainties in thermodynamic data due to the contributions from proton disorder and additional defects are compared with the "reference data" [R. Feistel and W. Wagner, J. Phys. Chem. Ref. Data 35, 1021 (2006)] for H2O ice Ih. [ABSTRACT FROM AUTHOR]

With large-scale non-equilibrium molecular dynamics simulations and in situ x-ray diffraction analysis, we conducted a systematic investigation into the effects of pre-existing shear strain (γ x y ) on the shock response of single crystal iron. Our findings reveal significant effects of γ x y on the deformation of the crystal structure during shock loading, leading to noticeable alterations in the propagation of shock waves. Specifically, during the elastic stage, the presence of γ x y results in a reduction of shock strength, consequently diminishing the magnitude of elastic lattice strain (ε e ). In the plastic stage, γ x y stimulates the α – ε phase transformation, and structure deformation undergoes a transition from the sequential activity of dislocation-to-transformation to the synchronous activity of dislocation and transformation. This transition inhibits the propagation of plastic waves and consequently broadens the elastic regime. Additionally, the introduction of γ x y activates different slip systems, as it alters the corresponding resolved shear stress. Concurrently, the presence of γ x y triggers the activation of different high-pressure phase variants. Our investigation sheds light on the fundamental physics of iron under shock compression and the influence of pre-existing shear strain on its behavior. [ABSTRACT FROM AUTHOR]

High-fidelity constitutive models are critical for accurate meso-scale continuum modeling and prediction of shock initiation of crystalline energetic materials (EMs). While empirically calibrated or atomistic-guided anisotropic elastoplastic models of EM such as cyclotetramethylene-tetranitramine (HMX) and cyclotrimethylene-trinitramine (RDX) capture important micromechanical phenomena (such as dislocation evolution, slip-resistance, and anisotropic elasticity), the computational cost of using anisotropic single-crystal plasticity models can become prohibitive for meso-scale computations of void-collapse and hotspot formation in microstructures. Thermo-mechanically representative, isotropic, pressure, temperature, and rate-dependent material constitutive models are practical alternatives for meso-scale simulations of the shock response of microstructures. To this end, this work constructs physically consistent isotropic plasticity from anisotropic single-crystal plasticity models for HMX and RDX. State-of-the-art crystal plasticity models for HMX and RDX are used to compute the stress states in single crystals oriented in three different directions relative to shocks generated by impact at velocities ranging from 100 to 1000 m/s. Post-shock von Mises stress fields for the three orientations are then used to calibrate the strain-rate hardening coefficient and the reference strain rate for a rate-dependent Johnson–Cook (JC) yield surface model. We compare the pressures and the post-shock von Mises stresses between the JC and the anisotropic models to show that the isotropic computations closely approximate the averaged deformation response of the three different crystal orientations. We then model the interaction of a shock generated by a 500 m/s impact with a 0.5 μm void and show that the pressures and the deviatoric stresses obtained using the isotropic model closely match those computed from anisotropic models for both HMX and RDX. The resulting isotropic J2 plastic flow model for HMX and RDX can be employed to perform meso-scale simulations for energy localization due to shear bands and void collapse in the two materials. [ABSTRACT FROM AUTHOR]

PtS2, a member of the group 10 transition metal dichalcogenides (TMDs), has received extensive attention because of its excellent electrical properties and air stability. However, there are few reports on the preparation of single-crystal PtS2 in the literature, and the growth mechanism of single crystal PtS2 is not well elucidated. In this work, we proposed a method of preparation that combines magnetron sputtering and chemical vapor transport to obtain monocrystalline PtS2 on a SiO2/Si substrate. By controlling the growth temperature and time, we have synthesized a single crystalline PtS2 of hexagonal shape and size of 1–2 μm on a silicon substrate. Combining the molecular dynamics simulation, the growth mechanism of single crystal PtS2 was investigated both experimentally and theoretically. The synthesis method has a short production cycle and low cost, which opens the door for the fabrication of other TMDs single crystals. [ABSTRACT FROM AUTHOR]

A Landau–Devonshire thermodynamic energy density function for ferroelectric wurtzite aluminum scandium nitride (Al1−xScxN) solid solution is developed. It is parametrized using available experimental and theoretical data, enabling the accurate reproduction of composition-dependent ferroelectric properties, such as spontaneous polarization, dielectric permittivity, and piezoelectric constants, for both bulk and thin films. The maximum concentration of Sc for the wurtzite structure to remain ferroelectric is found to be 61 at. %. A detailed analysis of Al1−xScxN thin films reveals that the ferroelectric phase transition and properties are insensitive to substrate strain. This study lays the foundation for quantitative modeling of novel ferroelectric wurtzite solid solutions. [ABSTRACT FROM AUTHOR]

The trap centers have a significant impact on the electronic properties of lead tungstate (PbWO4), suggesting their crucial role in optoelectronic applications. In the present study, we investigated and revealed the presence of shallow trap centers in PbWO4 crystals through the utilization of the thermally stimulated current (TSC) method. TSC experiments were performed in the 10–280 K range by applying a constant heating rate. The TSC spectrum showed the presence of a total of four peaks, two of which were overlapped. As a result of analyzing the TSC spectrum using the curve fit method, the activation energies of revealed centers were found as 0.03, 0.11, 0.16, and 0.35 eV. The trapping centers were associated with hole centers according to the comparison of TSC peak intensities recorded by illuminating the opposite polarity contacts. Our findings not only contribute to the fundamental understanding of the charge transport mechanisms in PbWO4 crystals but also hold great promise for enhancing their optoelectronic device performance. The identification and characterization of these shallow trap centers provide valuable insights for optimizing the design and fabrication of future optoelectronic devices based on PbWO4. [ABSTRACT FROM AUTHOR]

An extension of a constitutive law for 1,3,5-triamino-2,4,6-trinitrobenzene (TATB) is proposed with a focus on the calibration of a crystal plasticity law. TATB, a highly anisotropic energetic molecular crystal used in explosive formulations, can be subjected to high-pressure and high-temperature conditions, either under high strain-rate deformation or shock loading. The existing thermodynamically consistent model, fully informed by molecular dynamics (MD) simulations, includes nonlinear elasticity as well as a phase-field by reaction pathway formalism under large strain for the modeling of TATB behavior upon pressure as well as its well-known twinning–buckling deformation mechanism. However, it has been observed that TATB single crystal can accommodate large deformations through dislocation-mediated plasticity, a feature not included in the mesoscale model. In the present work, we take advantage of the microscopic flow surface, previously computed through MD calculations, to calibrate a crystal plasticity law, extending the capability of the continuum model currently limited to low velocity impacts and moderate strain rate. Indeed, the microscopic flow surface, defined as a 3D stress-at-first-defect-nucleation contains all information about TATB single crystal mechanical response under directional shear loading, including twinning, buckling, and plastic events. The calibration process uses differential evolution optimization to calibrate TATB basal and transverse slip systems critical stresses to reproduce the microscopic flow surface. Finally, the response of a TATB single crystal to directional loading is investigated in order to evaluate the new model. [ABSTRACT FROM AUTHOR]

To obtain high-performance THz-wave-emitting devices made of single crystals of Bi 2 Sr 2 CaCu 2 O 8 + δ (Bi2212), a high-temperature superconductor, an understanding of the device characteristics based on crystal characteristics can be a key issue because, in principle, the electrical properties of the intrinsic Josephson junctions (IJJs) constructed in Bi2212 crystals highly depend on crystal conditions, such as carrier concentration, crystal homogeneities, and crystal defects. To evaluate the tendencies of the device characteristics associated with crystal characteristics, we prepared Bi2212 crystals with different Bi/Sr ratios (x = 0.05 , 0.15, and 0.25) and δ values (annealed under N 2 or O 2 gas flow conditions). The unit cell parameter c decreased as the Bi/Sr ratio or δ increased. For the same annealing conditions under N 2 gas flow, the superconducting transition temperature as well as the size of the hysteresis loop of the current–voltage characteristics and emission characteristics were significantly suppressed for the sample with x = 0.25 compared with the corresponding values for the samples with x = 0.05 and 0.15. The experimental results clearly indicate that parameters, such as the Bi/Sr ratio and annealing conditions, are crucial factors in determining the electrical characteristics of a device. This information can be a useful guide for the preparation of crystals for IJJ THz-wave devices that can be fine-tuned according to the desired device characteristics. [ABSTRACT FROM AUTHOR]

To control the growth of layered two-dimensional structures, such as transition metal dichalcogenide materials or heterostructures, understanding the growth mechanism is crucial. Here, we report the synthesis of ultra-thin MoO2 nanoplatelets through the sublimation of MoO3. Rhombus MoO2 nanoplatelets with the P21/c space group were characterized using various microscopic and spectroscopic techniques. Introducing sulfur sources into the chemical vapor deposition system also leads to the formation of monoclinic MoO2 nanoflakes due to the incomplete sulfurization of MoO3. With a gradual increase in the vapor concentration of sulfur, MoO3 undergoes stepwise reduction into MoS2/MoO2 and eventually into MoS2. Additionally, utilizing MoO2 as a precursor for Mo sources enables the formation of monolayer MoS2 single crystals. This work provides an effective approach for growing MoO2 nanoplatelets and elucidates the mechanism behind the stepwise sulfurization of MoO3. [ABSTRACT FROM AUTHOR]

Nickel/bismuth (Ni/Bi) bilayers have recently attracted attention due to the occurrence of time-reversal symmetry breaking in the superconducting state. Here, we report on the structural, magnetic, and electric characterization of thin film Ni/Bi bilayers with several Bi thicknesses. We observed the formation of a complex layered structure depending on the Bi thickness caused by the inter-diffusion of Bi and Ni which leads to the stabilization of NiBi 3 at the Bi/Ni interface. The superconducting transition temperature and the transition width are highly dependent on the Bi thickness and the layer structure. Magnetoelectric transport measurements in perpendicular and parallel magnetic fields were used to investigate the temperature-dependent upper critical field within the framework of the anisotropic Ginzburg–Landau theory and the Werthamer–Helfand–Hohenberg model. For thicker samples, we observed a conventional behavior, similar to that shown by NiBi 3 bulk samples, including a small Maki parameter (α M = 0), no spin–orbit scattering (λ S O = 0) and nearly isotropic coherence length (γ = ξ ⊥ (0) / ξ ∥ (0) ≈ 1). The values obtained for these properties are close to those characterizing NiBi 3 single crystals. On the other hand, in very thin samples, the Maki parameter increases to about α M = 2.8. In addition, the coherence length becomes anisotropic (γ = 0.32) and spin–orbit scattering (λ S O = 1.2) must be taken into account. Our results unequivocally show that the properties characterizing the superconducting state in the Ni/Bi are strongly dependent on the sample thickness. [ABSTRACT FROM AUTHOR]

As one of the promising room temperature nuclear radiation detection materials, the all-inorganic perovskite CsPbBr3 single crystal has been receiving much attention in recent years. Even though the performance of the CsPbBr3 detector is improving continuously, the disadvantages of detection instability have not been solved fundamentally, and this instability is mainly caused by ionic migration in the CsPbBr3 single crystal itself. In this paper, a reasonable ionic migration model is proposed based on an in-depth study of the current hysteresis phenomenon and ionic migration mechanism in the Ti/CsPbBr3/Ti detector. The model shows that the ions migrate to the anode or cathode under an external electric field, and the accumulated ions subsequently form an inverted internal electric field inside the crystal and carrier transport barriers at the metal–semiconductor interface simultaneously. The photoelectric characteristic and ionic migration activation energy (E a i o n) fitting results also prove the rationality of the ionic migration model. Furthermore, the ionic migration model can also be used to explain the left-shift of the energy response peak and the decrease in the normalized charge collection efficiency in the Ti/CsPbBr3/Ti detector. This paper systematically investigates the intrinsic origin of migrated ions and the influence of ionic migration on detection stability, which will provide a potential solution to improve detection stability by suppressing ionic migration in the near future. [ABSTRACT FROM AUTHOR]

The dependence of the dielectric permittivity of ferroelectric materials on electric field magnitude impacts the performance of ferroelectric devices. In a ferroelectric generator, a shock wave travels through the ferroelectric element and depolarizes it, and surface charges are released from the element electrodes, resulting in the generation of a megawatt power level for several microseconds. The dielectric properties of the compressed and uncompressed zones of the ferroelectric element affect the generated voltage and energy. The results of previous studies indicate that the low-field dielectric permittivity of poled Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 (PZT 95/5) ferroelectrics in the uncompressed zone differs significantly from the high-field permittivity. Herein, the results are presented from the experimental investigation of the high-field permittivity of poled uncompressed PZT 95/5 ferroelectric ceramics and films, PZT 52/48 ferroelectric ceramics, and rhombohedral 0.27Pb(In1/2Nb1/2)O3–0.47Pb(Mg1/3Nb2/3)O3–0.26PbTiO3 (0.27PIN-PMN-0.26PT) and 0.68Pb(Mg1/3Nb2/3)O3–0.32PbTiO3 (0.68PMN-0.32PT) ferroelectric single crystals. The dependences of the permittivity on the electric field were determined using a pulsed electric field ranging from 0.1 to 10 kV/mm. The data indicate that the application of a pulsed high electric field results in a fourfold increase in the relative permittivity of PZT 95/5 ceramics and films over the small signal value (from 300 to 1200), and a threefold increase in the permittivity of single-domain [111]c cut and poled 0.27PIN-PMN-0.26PT crystals (from 700 to 2100), while a high electric field does not have a significant impact on the permittivity of PZT 52/48 ceramics or 0.27PIN-PMN-0.26PT and 0.68PMN-0.32PT crystals cut and poled in the domain engineered [001]c or [011]c direction. [ABSTRACT FROM AUTHOR]