Search

Two-dimensional (2D) MoS2 with appealing physical properties is a promising candidate for next-generation electronic and optoelectronic devices, where the ultrathin MoS2 is usually laid on or gated by a dielectric oxide layer. The oxide/MoS2 interfaces widely existing in these devices have significant impacts on the carrier transport of the MoS2 channel by diverse interface interactions. Artificial design of the oxide/MoS2 interfaces would provide an effective way to break through the performance limit of the 2D devices but has yet been well explored. Here, we report a high-performance MoS2-based phototransistor with an enhanced photoresponse by interfacing few-layer MoS2 with an ultrathin TiO2 layer. The TiO2 is deposited on MoS2 through the oxidation of an e-beam-evaporated ultrathin Ti layer. Upon a visible-light illumination, the fabricated TiO2/MoS2 phototransistor exhibits a responsivity of up to 2,199 A/W at a gate voltage of 60 V and a detectivity of up to 1.67 × 1013 Jones at a zero-gate voltage under a power density of 23.2 µW/mm2. These values are 4.0 and 4.2 times those of the pure MoS2 phototransistor. The significantly enhanced photoresponse of TiO2/MoS2 device can be attributed to both interface charge transfer and photogating effects. Our results not only provide valuable insights into the interactions at TiO2/MoS2 interface, but also may inspire new approach to develop other novel optoelectronic devices based on 2D layered materials. [ABSTRACT FROM AUTHOR]

The morphology and structural stability of metal/2D semiconductor interfaces strongly affect the performance of 2D electronic devices and synergistic catalysis. However, the structural evolution at the interfaces has not been well explored particularly at atomic resolution. In this work, we study the structural evolution of Au nanoparticles (NPs) on few-layer MoS2 by high resolution transmission electron microscope (HRTEM) and quantitative high-angle annular dark field scanning TEM. It is found that in the transition of Au from nanoparticles to dendrites, a dynamically epitaxial alignment between Au and MoS2 lattices is formed, and Moiré patterns can be directly observed in HRTEM images due to the mismatch between Au and MoS2 lattices. This epitaxial alignment can occur in ambient conditions, and can also be accelerated by the irradiation of high-energy electron beam. In situ observation clearly reveals the rotation of Au NPs, the atom migration inside Au NPs, and the transfer of Au atoms between neighboring Au NPs, finally leading to the formation of epitaxially aligned Au dendrites on MoS2. The structural evolution of metal/2D semiconductor interfaces at atomic scale can provide valuable information for the design and fabrication of the metal/2D semiconductor nano-devices with desired physical and chemical performances. [ABSTRACT FROM AUTHOR]