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We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in magnetoelectrically coupled heterostructures. Theoretically, we show how a piezoelectric/ferromagnetic (PE/FM) combination can lead to non-volatility in pseudo-magnetization exhibiting overall ferroelectric-like behavior. The pseudo-magnetization can be manipulated by extremely low voltages especially when the FM is a low-barrier nano-magnet. Using a circuit model benchmarked against experiments, we determine the switching energy, delay, switching probability and retention time of the envisioned 1T/1C memory device in terms of magnetic and circuit parameters and discuss its thermal stability in terms of a key parameter called back-voltage vm which is an electrical measure of the strain-induced magnetic field. Taking advantage of ferromagnetic resonance measurements, we experimentally extract values for vm in CoFeB films and circular nano-magnets deposited on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 which agree well with the theoretical values. Our experimental findings indeed indicate the feasibility of the proposed novel device and confirm the assumed parameters in our modeling effort. [ABSTRACT FROM AUTHOR]

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1−xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1−xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic–ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator. [ABSTRACT FROM AUTHOR]

Purpose: Demonstrating multifield and inverse contrast switching of magnetocaloric high contrast ratio MRI labels that either have increasing or decreasing moment versus temperature slopes depending on the material at physiological temperatures and different MRI magnetic field strengths. Methods: Two iron‐rhodium samples of different purity (99% and 99.9%) and a lanthanum‐iron‐silicon sample were obtained from commercial vendors. Temperature and magnetic field‐dependent magnetic moment measurements of the samples were performed on a vibrating sample magnetometer. Temperature‐dependent MRI of different iron‐rhodium and lanthanum‐iron‐silicon samples were performed on 3 different MRI scanners at 1 Tesla (T), 4.7T, and 7T. Results: Sharp, first‐order magnetic phase transition of each iron‐rhodium sample at a physiologically relevant temperature (~37°C) but at different MRI magnetic fields (1T, 4.7T, and 7T, depending on the sample) showed clear image contrast changes in temperature‐dependent MRI. Iron‐rhodium and lanthanum‐iron‐silicon samples with sharp, first‐order magnetic phase transitions at the same MRI field of 1T and physiological temperature of 37°C, but with positive and negative slope of magnetization versus temperature, respectively, showed clear inverse contrast image changes. Temperature‐dependent MRI on individual microparticle samples of lanthanum‐iron‐silicon also showed sharp image contrast changes. Conclusion: Magnetocaloric materials of different purity and composition were demonstrated to act as diverse high contrast ratio switchable MRI contrast agents. Thus, we show that a range of magnetocaloric materials can be optimized for unique image contrast response under MRI‐appropriate conditions at physiological temperatures and be controllably switched in situ. [ABSTRACT FROM AUTHOR]

We have successfully developed a Seebeck coefficient Standard Reference Material (SRM™), Bi2Te3, that is essential for interlaboratory data comparison and for instrument calibration. Certification measurements were performed using a differential steady-state technique on 10 samples (15 measurements) randomly selected from a batch of 390 bars. The certified Seebeck coefficient values are provided from 10 to 390 K, and they are further supported by transient measurements. The availability of this SRM will validate measurement results, leading to a better understanding of the structure/property relationships and underlying physics of potential high-efficiency thermoelectric materials. [ABSTRACT FROM AUTHOR]

Magnetization measurements of soft-magnetic materials can be affected if they are characterized using a superconducting solenoid. Recording hysteresis loops while stepping the magnetic field can cause an apparently inverted hysteresis, if due to the pinned remanent flux in the magnet the field at the sample location exceeds the sample’s coercive field. Hysteresis loops recorded while sweeping the field can also be affected by ramping rate. The sweeping-rate dependence is caused by leakage currents resulting from the persistent switch and synchronization issues regarding collection of magnetic moment and field data. The resulting errors can be estimated by measuring paramagnetic dysprosium oxide. [ABSTRACT FROM AUTHOR]