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Phonon diffraction and interference patterns are observed at the atomic scale, using molecular dynamics simulations in systems containing crystalline silicon and nanometric obstacles, such as voids or amorphous inclusions. The diffraction patterns due to these nano-architectured systems of the same scale as the phonon wavelengths are similar to the ones predicted by the simple Fresnel–Kirchhoff integral. The few differences between the two approaches are attributed to the nature of the interface and the anisotropy of crystalline silicon. Based on the wave description of phonons, these findings can provide insights into the interaction of phonons with nano-objects and can have applications in smart thermal energy management. [ABSTRACT FROM AUTHOR]

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1−xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi2Se3, but along the (111) crystallographic direction on BaF2 (111) and Pb1−xEuxSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic–ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator. [ABSTRACT FROM AUTHOR]

We investigate the magneto-optical (MO) polar Kerr enhancement of Fabry–Pérot cavities with perpendicular magnetic anisotropy for chemical and biological sensing applications. The MO cavities consist of stacked films with a half-mirrored surface layer, a dielectric interference layer, a total-reflection mirror, and a magnetic metal layer. Co80Pt20 and Al-doped ZnO (AZO) thin films were utilized as the magnetic and interference layers, respectively. The cavities produce two types of MO enhancement depending on the thickness of the magnetic layer. The sample with a thick magnetic layer as a total-reflection mirror generates a single peak in the polar Kerr spectrum. Contrarily, inserting a several-nanometer-thick CoPt layer into the AZO layer produces a resonant-type spectrum. Although both samples generate large MO enhancement factors (>50), the magnetic properties significantly differ. The AZO/CoPt/AZO interference layer controls the crystalline and interface conditions and produces a square-shaped out-of-plane hysteresis loop with a large Kerr rotation angle. Moreover, the use of an ultrathin CoPt film significantly reduces the saturation magnetization field. Thus, Fabry–Pérot cavities with a CoPt/AZO interference layer may serve as high-sensitivity, low-energy-consumption sensor elements. [ABSTRACT FROM AUTHOR]

Spherulite-related space–charge electret properties of polypropylene (PP) have been widely discussed in the past decades. In the present paper, a less-common crystalline structure in PP—transcrystalline PP—is studied regarding its electret behavior in comparison with the typical spherulitic morphology. Polarized light microscopy and differential scanning calorimetry were employed to characterize the crystallite types and crystallinities of transcrystalline and spherulitic PP. Their electret functionality is investigated by means of thermally stimulated discharge experiments, where the cross-over phenomenon is observed on transcrystalline PP films, whereas surface-potential saturation and undercharging on the surface occur on the spherulitic samples. Besides, an asymmetrical behavior of positive and negative surface-charge stabilities is found on PP with spherulites, the negatively charged spherulitic surfaces show a better charge stability. It is shown that PP electrets are very sensitive to changes in the microscopic crystalline structures and their interfaces as well as in the molecular conformations controlled through adjustments of the respective processing steps. In addition, surface and bulk nanocomposites of PP or low-density polyethylene with inorganic particles are included in the comparison. In view of recent developments in the areas of PP-based electret-fiber filters and cellular-foam ferroelectrets, the observed changes in the charge-storage properties may have particular relevance, as the required film, fiber, or foam processing might significantly modify crystalline morphologies and nano-scale interfaces in PP electrets. Limitations in the charge-storage capabilities of interface structures may also be of interest in the context of high-voltage electrical-insulation materials where reduced space–charge accumulation and slightly increased charge transport can be advantageous. [ABSTRACT FROM AUTHOR]

Crystallization processes of amorphous germanium–tin (GeSn) under low-energy electron-beam irradiation were examined using transmission electron microscopy (TEM). Freestanding amorphous GeSn thin films were irradiated with a 100 keV electron beam at room temperature. The amorphous GeSn was athermally crystallized by electron-beam irradiation, when the electron flux exceeded the critical value. Heterogeneous structures consisting of nano- and micro-crystallites were formed after crystallization of amorphous GeSn with ∼24 at. % Sn in the as-sputtered amorphous state. In situ TEM observations of structural changes under electron-beam irradiation revealed that random nucleation and growth of nanocrystallites occur at the early stage of crystallization, followed by rapid formation of micro-grains surrounding the nanocrystals. It has been suggested that the growth of micro-grains progresses via supercooled liquid Sn at the amorphous/crystalline interface. The resultant GeSn grains with a size of a few micrometers contained ∼15 at. % Sn, much larger than the solubility limit of Sn in Ge (∼1 at. % Sn). [ABSTRACT FROM AUTHOR]

2D electron gases (2DEGs) formed at oxide interfaces provide a rich testbed for fundamental physics and device applications. While the discussion of the physical origins of this phenomenon continues, the recent discovery of oxide 2DEGs at non-epitaxial interfaces between amorphous and crystalline oxides provides useful insight into this debate. Furthermore, using amorphous oxides offers a low-cost route towards realizing 2DEGs for device applications. In this work, the band offsets of a simple model system of an amorphous-crystalline oxide interface are investigated. The model system consists of amorphous Al2O3 grown on single-crystalline (001) SrTiO3. X-ray photoelectron spectroscopy is employed to study the chemical states, bandgap, and band offsets at the interface. The density of ionic defects near the interface is found to be below the detection limit, and the interface is found to be insulating. Analysis of the relative band structure yields significant interfacial barriers, exceeding 1.05 eV for holes and 2.0 eV for electrons. The barrier for holes is considerably larger than what is known for related material systems, outlining the promise of using amorphous Al2O3 as an effective and simple insulator, an important building block for oxide-based field effect devices. [ABSTRACT FROM AUTHOR]

THz and DC losses in crystalline states of GeSbTe and AgInSbTe phase-change material systems are re-examined and discussed. Although a simple free carrier transport has been assumed so far in the GeSbTe (GST) system, it is shown through recent experimental results that a series sequence of intragrain and intergrain (tunneling) transport, as recently formulated in Shimakawa et al., 'The origin of non-Drude terahertz conductivity in nanomaterials,' Appl. Phys. Lett. 100, 132102 (2012) may dominate the electronic transport in the commercially utilized GST system, producing a non-Drude THz conductivity. The extracted physical parameters such as the free-carrier density and mobility are significantly different from those obtained from the Drude law. These physical parameters are consistent with those obtained from the DC loss data, and provide further support for the model. Negative temperature coefficient of resistivity is found even in the metallic state, similar to amorphous metals, when the mean free path is short. It is shown that the concept of minimum metallic conductivity, often used in the metal-insulator transition, cannot be applied to electronic transport in these materials. [ABSTRACT FROM AUTHOR]

Quasiphase matching (QPM) is a widely used theory in crystal to analyze the character of second-harmonic generation (SHG) emitted from it. Based on the structural features of collagen type I, where the constituted fibrils in collagen function as a crystal which has the structure of two-dimensional (2D) quasicrystalline, in this paper, we use the QPM theory on collagen for SHG emission direction study under the excitation of laser light through a microscope. The effects of numerical aperture NA, as well as the structural parameters, such as QPM order (m,l) and collagen period a=d1+d2 associated with the fibrils diameter (d1), packing density and interfibrils structure (d2), etc., on SHG emission angle φ have been investigated. Our theoretical results show that collagen period a has threshold effect on φ to present forward or backward SHG emission and NA has minor influence on this threshold value a. Collagen period of a has more significant influence on SHG emission angle φ when a is smaller than the threshold value. In reality, we realize that diameter of collagen fibrils d1 plays a major role on forward or backward emission of SHG. Here, for example, (we assume d1=a/2), when d1≤95 nm [(m,l)=(1,0)], the backward SHG shows up at any magnitude of NA, while when d1≥150 nm [(m,l)=(1,0)], SHG presents forward emission feature under all circumstances. Between them, SHG emits from forward direction to backward direction as the increase in NA. The QPM order (m,l) has nonlinear impact on SHG emission angle φ and has different degrees of influence on different collagen period a. Our theoretical results are highly consistent with the experiments results demonstrated by other researchers and provide a proper explanation of the phenomenon of appreciable backward SHG signals appearing in collagen type I. Our established theoretical model of applying QPM theory in 2D quasicrystalline fibrils is therefore confirmed to be a suitable model for dealing with SHG in type I collagen. [ABSTRACT FROM AUTHOR]

We develop a computationally efficient method for the theoretical analysis of thermophoresis of nanoparticles and adatoms on crystalline surfaces (thermal tweezers) for efficient parallel nanofabrication. The analysis of surface diffusion of particles or adatoms in the presence of strong temperature gradients is conducted through the direct determination of probability distributions for diffusing particles, using the numerical solution of the Smoluchowski diffusion equation with varying (temperature-dependent) diffusion constant. The local values of the diffusion constant are determined from the Fokker–Planck equation for the considered crystalline potential of the substrate and local temperature. Steady-state and nonsteady-state particle distributions on the surface are obtained and analyzed in the presence of optically-induced strong temperature gradients. Detailed comparison of this approach with the previously obtained results from the Monte Carlo simulations of the Langevin equation is conducted, demonstrating high computational efficiency, and accuracy of the new method in the high-friction regime. Applicability conditions for the developed method are also determined and discussed. [ABSTRACT FROM AUTHOR]

The amorphous (a-) CoFeB/crystalline (c-) MgO based tunneling system interface has been studied by means of quantitative high resolution transmission electron microscopy from atomic to micrometer length scales with increasing annealing temperatures. On the micron scale an irregular nucleation is found. On the atomic scale a long-range order is induced by the MgO interface, explaining the high tunnel magnetoresistance values >100% even for not fully crystallized CoFeB/MgO/CoFeB tunnel junctions. [ABSTRACT FROM AUTHOR]

In this paper, the impact of iron contamination on the conversion efficiency of single-crystalline p-type silicon solar cells is investigated by means of the combination of numerical simulations and experimental data, taking into account the more recent results about the properties of iron in single-crystalline silicon. Numerical simulations highlight the fill factor losses due to the injection-level dependence of the bulk lifetime, which attenuates the decrease of the open circuit voltage and thus that of the solar cell conversion efficiency with iron concentration. Gettering and hydrogenation effects are quantified by means of experimental results obtained from voluntarily contaminated solar cells and integrated in the simulations. The results show that iron appears to be a metallic impurity rather well tolerated in p-type single-crystalline silicon solar cells, because its injection-level dependent bulk lifetime, like its abilities to be gettered and to be passivated by hydrogenation, limits its influence on the solar cell conversion efficiency. [ABSTRACT FROM AUTHOR]

We have studied the depth dependence and temperature behavior of the ordering of smectic-A films close to the smectic A-nematic transition, deposited on grated glass. X-ray grazing incidence geometry in reflection mode through the glass substrate was used to characterize the samples. Our results indicate the presence of a structure similar to the helical twist grain boundary phase. The structure has two maxima, one close to the glass-liquid crystal interface and another about 8 μm above the surface. The structure at 8 μm is the one that dominates at higher temperatures. In addition, we find that order is preserved to temperatures close to the nematic-isotropic transition temperature for the deeper gratings. We find also a dependence of the orientation of the structure with the depth of the grating and the elastic constant of the liquid crystal. [ABSTRACT FROM AUTHOR]

This article studies theoretically and experimentally the recombination at the amorphous/crystalline silicon interface of a heterojunction with intrinsic thin layer (HIT) structure without metallization. We propose a physical model to calculate the interface recombination rate under illumination. This model calculates the effective lifetime τeff as a function of the average excess minority carrier concentration 〈Δn〉. In order to test the model, we prepared a set of HIT structures. The dependence of τeff vs 〈Δn〉 of the samples is measured using the quasi-steady-state photoconductance technique. By fitting our model to the experimental data, we determine the a-Si:H/c-Si interface parameters and the doping density of the amorphous layer. [ABSTRACT FROM AUTHOR]

We propose a ray optics model to calculate the trapping force on a dielectric particle located on the interface between two media and illuminated by a focused evanescent field beam. Such a focused evanescent beam is produced by a high numerical aperture objective with a central obstruction whose size satisfies the total internal reflection condition on the interface. The dependence of the lifting force on the obstruction size, the particle size, and the distance of the particle from the interface is revealed. [ABSTRACT FROM AUTHOR]

A three-dimensional transient temperature field model (TTFM) is proposed for the general problem of laser-induced out-of-equilibrium annealing of a bilayer device, which is made up of a bulk material covered by a transparent layer. The TTFM solves the moving-boundary problem with a deterministic relation between the interface velocity and temperature in contrast to preceding problem-dependent models, which use an interface-tracking heuristic algorithm. The TTFM is the first step to model many temperature-driven phenomena such as diffusion and segregation in laser annealing. Both computed transient temperature field and melted-zone dimensions of a SiO2/Si example device, which is irradiated by a focused visible (532 nm) laser, are in very good agreement with experimental measurements. [ABSTRACT FROM AUTHOR]

End of range (EOR) defects are the most commonly observed defects in ultrashallow junction devices. They nucleate at the amorphous-crystalline interface upon annealing after amorphization due to ion implantation. EOR defects range from small interstitial clusters of a few atoms to {311} defects and dislocation loops. They are extrinsic defects and evolve during annealing. Li and Jones [Appl. Phys. Lett., 73, 3748 (1998)] showed that {311} defects are the source of the projected range dislocation loops. In this article, the same theory is applied to EOR dislocation loops to model the nucleation and evolution of the loops. The model is verified with experimental data and accurately represents the nucleation, growth, and Ostwald ripening stages of dislocation loop evolution. The density and the number of interstitials trapped by dislocation loops are compared with the experimental results for several annealing times and temperatures. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Laser micro-Raman spectroscopy was used to examine the silicon substrates machined by single-point diamond turning at machining scales ranging from 10 to 1000 nm under plane strain conditions. The results showed that the subsurface layer was partially transformed to amorphous, the extent of amorphization depending strongly on the undeformed chip thickness. The intensities of the crystalline phase and the amorphous phase show opposite tendencies with respect to the undeformed chip thickness. In brittle regime machining, Raman spectra differ depending on the test locations. The intensity of the amorphous phase reaches maximum near the ductile–brittle transition boundary. In ductile regime machining, the intensity of the amorphous phase decreased sharply as the undeformed chip thickness decreased. This work provides technological insights into the possibility of direct manufacturing of subsurface damage-free optical and optoelectronic products of silicon by ductile machining without the need for or with a decreased need for subsequent etching or chemomechanical polishing. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We synthesized a single phase GdSi[sub 2] film on a Si(111) substrate with an interfacial SiO[sub 2] layer. In order to take account of the role of the interfacial SiO[sub 2] layer, systematic investigations on clean and oxidized Si substrates were done by using in situ reflection of high energy electron diffraction, x-ray diffraction, and atomic force microscopy of the silicides formed with post annealing. Our result showed that the interfacial SiO[sub 2] layer enhanced the structural transformation of the initial GdSi[sub 1.7] hexagonal phase into the GdSi[sub 2] orthorhombic phase above the decomposition temperature of SiO[sub 2](∼800 °C). We proposed a reaction mechanism for the GdSi[sub 2] film formation with the help of the interfacial SiO[sub 2] layer. The measured electrical resistivity of the Gd-silicide film strongly depends on the silicide phase. [ABSTRACT FROM AUTHOR]

Structural and compositional analyses of a MnSi layer have been performed to elucidate the growth mechanism. The MnSi layer was grown by reactive deposition epitaxy in the presence of an Sb flux. The existence of Sb was found at the MnSi/Si interface and on the surface of MnSi layer by secondary ion mass spectrometry. In addition, x-ray photoelectron spectroscopy measurement shows that MnSb is formed on the surface of the grown MnSi layer. On the atomic scale, scanning transmission electron microscopy observations reveal the existence of an Sb–Mn–Sb structure at the interface between the MnSi layer and the Si substrate. The formation of the MnSb plays an important role for the improvement of crystalline quality of the silicide layer, acting both as a surfactant and as a compliant substrate for stress relief. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Presents information on a study which developed a theory of behavior of foreign solid inclusions in a liquid being crystallized. Methodology of the study; Results and discussion on the study; Conclusions.

Examines the modeling and experimental results of ion-beam-induced interfacial amorphization in silicon. Dependence on substrate temperature, ion flux and nuclear energy deposition at the amorphous/crystalline interface; Basis of the model on ballistic transport effects; Generation of a thermal ion-beam-induced defect; Thermally activated recombination of defects.

Studies the precipitation and growth of Ge crystallites formed via a two-step process of hydrothermal oxidation of Si1-xGexO2 and subsequent chemical reduction in forming gas. Ge-particle distributions; Particle diameters and their position relative to the Si/oxide interface with closed circles.

GaSe, a layered semiconductor, may be grown on the Si(111) surface by molecular beam epitaxy. The crystalline quality is relatively good, in the sense that the MeV [sup 4]He ion minimum channeling yield (∼30%) is as low as that of state-of-the-art bulk material, and the interface is atomically abrupt. The initial film deposits are epitaxial islands, and subsequent growth is in the Frank-van der Merwe mode. With the islands already relaxed at the nucleation stage and coalescing to essentially uniform coverage with the first monolayer of deposition, GaSe on Si(111) provides an example of van der Waals epitaxy. However, it is difficult to understand how epitaxy (crystallographic alignment with the substrate) can occur in such a case, where the film is incommensurate starting from the initial nuclei. A mechanism for alignment of the islands is proposed: they are aligned with the silicon substrate through the influence of dangling bonds at their perimeter, being “quasi-commensurate” by virtue of their small lateral size. Although discommensurate regions are created as the islands grow laterally, there is simply no change in their orientation. [ABSTRACT FROM AUTHOR]

Focuses on a study which measured the root-mean-square width of the buried crystalline/amorphous silicon(001)/silicon oxide[sub2] interface. Properties of metal-oxide semiconductor devices; Reverse correlation of interface width and oxide thickness; Difference between the rate of smoothing for wet and dry oxides.

Deals with a study which described the motion of an amorphous-crystalline interface in silicon induced by low energy recoils. Model description; Results; Discussion.

Presents a study which examined thermal and diffusion-induced stresses in crystalline solids. Description of the preliminary relation of thermodynamics; Components of the total strain; Details of numerical calculations for the directional crystallization method.

Presents information on a study which investigated carrier injection and transport in single crystalline paraffin on the basis of time-of-flight (TOF) data and direct current-photo injection experiments. Questions with regard to the microscopic behavior of charge carriers; Experimental setup; Results of TOF experiments; Discussion of photoinduced dielectric breakdown behavior.

Provides information on a study on the photoemission results from aluminum and rubidium interfaces within single crystals of Bi[sub2]Sr[sub2]CaCu[sub2]O[sub8]. Observation on the behavior of high-temperature superconductors; Adsorption capacity of rubidium and aluminum; Oxidation components of aluminum.

Presents a study which examined the graphoepitaxial growth of germanium on the textured natural crystalline surface relief duplicated on a foreign substrate. Methods; Results; Discussion.

Deals with the preparation of Pb(Zr,Ti)O3 (PZT) thin films by sol gel processing. Investigation on the crystalline phases of thin films; Properties of PZT thin films; Discussion on electro-optic effects in PZT thin films prepared by chemical methods.

Derives a bond-orbital theory for the hydrostatic photoelastic effect for three-dimensionally coordinated crystalline structures. Bond-orbital calculation of dielectric response; Discussion on photoelastic effect.

Presents experimental evidence that heat is generated at unexpectedly high temperatures during rapid deformation of at least some crystalline and polymeric solids. Observation of the heat by infrared sensors; Level of the infrared emissions and the blackbody temperatures; Association of the origins of the high temperatures with mechanical processes.

The magnetocaloric effect in single crystalline Nd0.5Sr0.5MnO3 (NSMO 0.5) is investigated by computing the field dependent entropy change (ΔS) and adiabatic temperature change (ΔTad). At the charge ordering temperature (TCO), the value of ΔSmax is found to be much higher than ΔSmax reported in polycrystalline samples. This “giant” entropy change is attributed to interplay (stronger in single crystals) among spin, charge, lattice, and orbital degrees of freedom resulting in a field induced transition at TCO. In contrast, the change in entropy associated with Curie temperature (TC) is very low. The direct measurements of the field induced temperature change (ΔT) are in agreement with the computed value of ΔS. The presence of short-range correlations with charge/orbital order (COO) above and below TC may be responsible for the suppression of the negative MCE at TC. A critical exponent analysis of the paramagnetic (PM) to ferromagnetic (FM) transition using magnetization data yields mean-field-like values, which is likely to be operative in inhomogeneous systems such as NSMO 0.5 with correlated COO clusters larger than lattice parameter. [ABSTRACT FROM AUTHOR]

The orientation ratio (OR) is a key issue to achieve high density in longitudinal recording media. Recent recording media have seed layers which exclusively promote small grain growth of the recording layer. In this paper, the effect of seed layers on OR was investigated by the use of various seed materials deposited twice. OR tends to decrease as the thickness of the seed layer is increased; however, the degree of decrease is quite different with seed material. A seed material with small Young’s modulus is preferable for a large OR. These results suggest that OR depends on the interface stress which is relieved as seed layer thickness is increased. Moreover, the relation between the stress in the seed layer and OR was also considered with a multilayer model. [ABSTRACT FROM AUTHOR]

We demonstrate how epitaxial FM (Ni) films can be grown by ECD directly onto GaAs(001) without outdiffusion or surface segregation of As or Ga. The thickness dependence of electrical and magnetic properties (saturation magnetic moment) verify the good quality of the layers and indicate that electrochemical deposition is a suitable candidate for the growth of epitaxial Ni films with sharp interfaces on GaAs(001). X-ray photoelectron spectroscopy (XPS) analysis on electroplated (epitaxial) Ni films showed no interdiffusion for annealing up to 250 °C. Annealing at higher temperatures, up to 350 °C, significantly increases both the As outdiffusion and the Schottky barrier heights, which indicates the correlation between intermixing and the diode quality. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

FeTaCN films were deposited on quartz substrates by cosputtering of Fe and TaC targets at room temperature with different N[SUB2] flow rate ratios in the sputtering gas. The as-deposited films were postannealed in vacuum for 30 min at various temperatures. The effects of annealing temperature on the N[SUB2] flow rate ratio and film thickness on the magnetic properties and microstructure of the film were investigated. X-ray diffraction and transmission electron microscopy analyses show that the as-deposited FeTaCN film has a nanocrystalline structure or mixing phases of nanocrystalline and amorphous. Nanocrystalline as-deposited film with good soft magnetic properties (in-plane coercivity Hc∥= 1∼2 Oe and 4πMs=12-14kG) can be obtained by controlling the N[SUB2] flow rate ratio and film thickness. The soft magnetic properties can be improved by postannealing the as-deposited film at 200-300 °C as the N[SUB2] flow rate ratio is higher than 5 vol %. For the Fe[SUB71.03Ta[SUB 6.1]C[SUB 7.2]N[SUB 15.67] film, the Hc∥ value decreases as the film thickness is increased when the annealing temperature is lower than 400 °C. After annealing at 300 °C, its Hc∥ is about 3.57 Oe as the film thickness is 50 nm and Hc∥ will decrease to 0.18 Oe as the film thickness is increased to 1000 nm. [ABSTRACT FROM AUTHOR]

Passivation-mediated growth was used to control the interface crystalline order and the magnetic continuity in epitaxial Co films on several GaAs(001) surfaces. Using Se, S, and O passivated layers on GaAs before Co deposition, we observed a variety of interface structures depending on the substrate condition. With the help of transmission electron microscopy (TEM) images, we show that a perfect and well-ordered crystalline growth at the initial stage of deposition for Co/Se/GaAs ensures a better growth for thicker film. The magnetic properties of Co overlayers on all the substrates were studied by magnetic linear dichroism in angular distribution (MLDAD) in photoemission and found to be different depending on the film crystallinity. By combining the TEM and MLDAD results, we conclude that Co film on Se/GaAs, which has an ordered interface, is a good candidate for use as a spin filter from the viewpoint of spin-injection mechanism. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Reports on the experimental observation of the longitudinal resonance mode in ferromagnets with a wandering axis. Analysis of the magnetic properties of an amorphous solid; Definition of the ferromagnetic resonance phenomenon in crystalline compounds; Properties of amorphous compounds.

Presents information on a study that analyzed the irradiation of natural and ultrapure synthetic crystalline quartz by a stationary electron beam. Experimental procedure; Results and discussion on the study.

Compares the transmission spectra of undoped crystalline αAl[sub2]O[sub3] synthesized by several growth techniques. Factors attributed to the salient features in the below-band-gap region; Summary of salient room-temperature transmission features.

Measurements of intrinsic magnetic parameters are important in the study of magnetic devices. A micromagnetic model is set up for a perpendicular disk media, including a recording layer (RL, CoCrPt-SiO2, 6 nm), a 12-nm nonmagnetic interlayer and an amorphous soft underlayer (a-SUL, FeCo, 42 nm), in order to study the measurement methods of the crystalline anisotropy and magnetostriction constants in the RL. The effects of the a-SUL on the magnetic properties of the RL are studied by calculating the hysteresis loops. The contributions of the RL and a-SUL to the torque curves of the whole media are calculated respectively. If the intrinsic stress at the interface between the RL and interlayer is along one of the in-plane directions, the crystalline anisotropy constant K1 and magnetostriction field Hms can be determined simultaneously from the simulated in-plane torque curves. [ABSTRACT FROM AUTHOR]

We have studied the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage characteristics of fluorinated amorphous carbon (a-C:F[sub x]) films using metal/a-C:F[sub x]/Si and metal/a-C:F[sub x]/metal structures, respectively. Samples annealed in a vacuum were also studied. The C-V curves of the as-deposited sample are stretched about the voltage axis. Interface state density of 4.1x10[sup 11] cm[sup -2] eV[sup -1] at the midgap was calculated. Annealing the sample deposited on Si in a vacuum caused more frequency dispersion in the C-V and G-V curves, probably due to the diffusion of carbon into silicon. The bulk density of states for samples deposited on metal, measured by space-charge-limited current technique, decreased from 4x10[sup 18] eV[sup -1] cm[sup -3] for the as-deposited sample, to 7x10[sup 17] eV[sup -1] cm[sup -3] for the annealed sample. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]