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Biocellulose or bacterial cellulose (BC) is a biocompatible (nano) material produced with a threedimensional network structure composed of microfibrils having nanometric diameters obtained by the Gluconacetobacter xylinus bacteria. BC membranes present relatively high porosity, allowing the incorporation or synthesis in situ of inorganic nanoparticles for multifunctional applications and have been used as flexible membranes for incorporation of magnetic nanocomposite. In this work, highly stable superparamagnetic iron oxide nanoparticles (SPION), functionalized with polyethylene glycol (PEG), with an average diameter of 5 nm and a saturation magnetization of 41 emu/g at 300K were prepared. PEG-Fe2O3 hybrid was dispersed by mixing a pristine BC membrane in a stable aqueous dispersion of PEG-SPION. The PEG chains at PEG-SPION's surface provide a good permeability and strong affinity between the BC chains and SPION through hydrogen-bonding interactions. PEG-SPION also allow the incorporation of higher content of nanoparticles without compromising the mechanical properties of the nanocomposite. Structural and magnetic properties of the composite have been characterized by XRD, SEM, energy-dispersive X-ray spectroscopy (EDX), magnetization, Raman spectroscopy, and magnetic force microscopy. [ABSTRACT FROM AUTHOR]

Mobility spectrum analysis (MSA) is a process of recovering the spectrum of carrier mobilities in an electronic material from a magnetic-field-dependent Hall measurement. This paper first presents a set of useful general properties of MSA that are true for all MSA methods. One such property is that Hall data can be classified as either "physical," with at least one spectrum of carrier mobilities that exactly fits the data, or "unphysical," where no mobility spectra exactly fit the data and the analysis must find approximate solutions. Almost all experimental Hall data collected at seven or more magnetic fields are slightly unphysical. The closest approximate solution for such unphysical data is always a set of discrete-carrier mobilities. A new method for multicarrier MSA is presented to display the likely properties of the discrete carriers as two-dimensional spectra vs both mobility and carrier density instead of one-dimensional spectra vs only mobility, as in previous methods. Measurement uncertainties are included as a fundamental part of the analysis so that the user can easily view the resultant uncertainty in the derived carrier properties. A separate method is also presented for reliably determining a smooth, high-entropy spectrum of carrier mobilities, which is constructed as the maximum-entropy linear combination of discrete-carrier solutions to the Hall data. An example using calculated Hall data corresponding to acoustic phonon scattering shows that the technique could potentially be used to measure the continuous mobility distributions that result from different scattering mechanisms. [ABSTRACT FROM AUTHOR]

To study the initiation and development of interfacial electrical damage in multi-layer dielectrics, an aging test of 3-layer polyimide films was conducted under pulsed voltage with a repetitive frequency of 500 Hz and a maximal amplitude of 30 kV. The variation in the damage morphology with the number of applied pulses was analyzed by a statistical method. The circuit current and partial discharge at different aging stages was measured, and the Fourier transform infrared spectrum analysis results of the aged and unaged sample regions were compared. The results demonstrate that the partial discharge in the dielectric interface gap, which is unavoidable in manufacturing, is the main cause of damage. It initiates from the interface and grows into the interior of the dielectric with the application of pulses. When there are no macroscopic defects on dielectric films, damage presents a punctiform morphology. The damage process can be divided into the following three stages: surface roughening damage, steady growth stage of damage points, and pre-breakdown stage. Differing from dielectrics without macroscopic defects, dielectrics with original void defects present transverse dendritic damage channels that initiate from the edge of the defect. [ABSTRACT FROM AUTHOR]

A detailed consideration of the discrete mobility-spectrum analysis (DMSA) method and its application to transport studies in HgCdTe is given. First, a brief review of the methods of the analysis of field dependences of the Hall coefficient and conductivity in HgCdTe-based structures with a multi-carrier mobility spectrum is presented. The advantages and drawbacks of these methods, which include original mobility-spectrum analysis by Beck and Anderson, multi-carrier fitting and iterative approach by Dziuba and Górska, and the later developments of these techniques, are considered. The properties of the envelope of the mobility spectrum are analyzed, and the specifics of DMSA are presented. Analysis of some magnetic-field B dependences of conductivity tensor components σxx(B) and σxy(B) presented in the literature is performed with DMSA, and the results are compared to those obtained with other methods. [ABSTRACT FROM AUTHOR]

This paper determines all the 13 elastic constants Cij of monoclinic β-Ga2O3, which has never been achieved since the discovery of this crystal about 100 years ago. We used resonant ultrasound spectroscopy with laser-Doppler interferometry, where the resonant-mode identification was unambiguously made by comparing measured and calculated displacement distributions on the vibrating specimen surface. Using more than 110 resonance frequencies, we inversely determined the Cij: C11 = 242.8 ± 2.9, C22 = 343.8 ± 3.8, C33 = 347.4 ± 2.5, C44 = 47.8 ± 0.2, C55 = 88.6 ± 0.5, C66 = 104.0 ± 0.5, C12 = 128 ± 0.1, C13 = 160 ± 1.5, C23 = 70.9 ± 2.1, C15 = –1.62 ± 0.05, C25 = 0.36 ± 0.01, C35 = 0.97 ± 0.03, and C46 = 5.59 ± 0.69 GPa. We also performed a density-functional-theory calculation and found that the local density approximation yields both the lattice parameters and Cij closer to the measurements than the generalized gradient approximation. Strong elastic-stiffness anisotropy is found in the diagonal elastic constants: C11 is smaller than C22 and C33 by ∼30%, and the difference between C44 and C66 exceeds 50%. Our measurements also reveal anomalous Poisson's ratios: ν21 and ν31 exceed 0.5, and ν23 and ν32 are almost zero. We explain these unusual elastic properties with the truss-like deformation of the tetrahedra-octahedra network and confirm this view with the ab- initio calculation. [ABSTRACT FROM AUTHOR]

There is a growing concern within the surface science community that the massive increase in the number of XPS articles over the last few decades is accompanied by a decrease in work quality including in many cases meaningless chemical bond assignment. Should this trend continue, it would have disastrous consequences for scientific research. While there are many factors responsible for this situation, the lack of insight of physical principles combined with seeming ease of XPS operation and insufficient training are certainly the major ones. To counter that, we offer a comprehensive tutorial written in the form of a step-by-step guide starting from experimental planning, through sample selection and handling, instrument setup, data acquisition, spectra analysis, and results presentation. Six application examples highlight the broad range of research questions that can be answered by XPS. The topic selection and the discussion level are intended to be accessible for novices yet challenging possible preconceptions of experienced practitioners. The analyses of thin film samples are chosen for model cases as this is from where the bulk of XPS reports presently emanate and also where the author's key expertise lies. At the same time, the majority of discussed topics is applicable to surface science in general and is, thus, of relevance for the analyses of any type of sample and material class. The tutorial contains ca. 160 original spectra and over 290 references for further reading. Particular attention is paid to the correct workflow, development of good research practices, and solid knowledge of factors that impact the quality and reliability of the obtained information. What matters in the end is that the conclusions from the analysis can be trusted. Our aspiration is that after reading this tutorial each practitioner will be able to perform error-free data analysis and draw meaningful insights from the rich well of XPS. [ABSTRACT FROM AUTHOR]

High Energy Lasers (HELs) used for defense applications require operational distances ranging from few hundred meters to several kilometers. As the distance increases, the incident beam properties and, consequently, the anticipated effect delivered to the sample become less predictable. Therefore, the direct observation of the event induced by the laser can become an asset. In this paper, we propose a novel spectroscopic method that analyses in real time the spectral components present in the flames produced during the interaction of a HEL with a metallic piece at a long distance. This method was used on aluminum and carbon steel samples placed 200m away from the laser system. It was discovered that the aluminum and iron oxides created as a by-product of the HEL reaction with the samples emitted clear fingerprint signatures that could be detected remotely using a spectroscopic receiver placed beside the HEL beam director. The real-time assessment of the laser-induced effect can be achieved by monitoring the temporal evolution of the oxide signatures, hence providing information to the operator about the reaction and the nature of the sample illuminated. [ABSTRACT FROM AUTHOR]

In this paper, we present new insight in the degradation and subsequent recovery of charge carrier lifetime upon light soaking at 75 °C observed in float-zone silicon wafers. Variations of doping type, dielectric passivation schemes and thermal treatments after layer deposition were performed. The degradation was only observed for p-type float-zone silicon wafers passivated with passivation schemes involving silicon nitride layers. An influence of thermal treatments after deposition was found. N-type wafers did not degrade independent of their passivation scheme. Room temperature re-passivation experiments showed the degradation to affect the wafer bulk, and photoluminescence studies demonstrated fine lateral striations of effective lifetime. We conclude that the degradation is caused by bulk defects that might be related to hydrogen complexes. [ABSTRACT FROM AUTHOR]

Thermal stability of optical near field transducers is an important issue for heat-assisted magnetic recording (HAMR), which affects HAMR system lifetime. In this paper, dark-field scattering spectroscopy was used to study the stability of nanometer-scaled Au lollipop transducers that were subjected to thermal annealing. Variation in relative peak intensity and red-shifting in peak position can be observed in scattering spectra for transducer after annealing. Based on the optical characterizations on Au thin films and calculations of Mie scattering by finite-difference time domain simulations, the measured changes in transducer scattering properties can reflect annealing-induced variations in optical properties and dimensional feature size for the Au lollipop transducer. Dark-field scattering spectroscopy can be a promising method to examine HAMR near field transducer thermal stability. [ABSTRACT FROM AUTHOR]

The fundamental of the generation and propagation of the atmospheric pressure nonequilibrium plasma jets has recently attracted significant interests. In this paper, investigations on the effects of the parameters of the pulsed dc voltages on the optical emission intensity of the plasma jet and the bullet propagation behavior are carried out based on the temporal-spatial resolved optical emission spectroscopy measurements and the high-speed photography. It is found that, with the increase in the applied voltage, the bullet propagates out from the nozzle earlier and accelerates to higher peak-velocities. The increase in the pulse frequency exerts no significant influences on the optical emission of the plasma jet and the bullet propagation velocity. But it can induce the bullet propagates out from the nozzle earlier. Besides, it is interesting to notice that, with the increase in the pulse width in the beginning, the bullet propagates out from the nozzle with longer delay time. However, when the pulse width is increased to be more than 100 μs, the delay time of the bullet propagating out from the nozzle becomes much shorter. On the other hand, with the increase in the pulse width, the optical emission intensity of the plasma jet drops and the maximum bullet velocity decreases too. Detailed analysis shows that it may be due to the accumulation of the charges and radicals, which can shorten the prebreakdown of the discharge inside the syringe and result in the bullet propagating out earlier from the nozzle. [ABSTRACT FROM AUTHOR]

A novel material, ZrScW2PO12, with negative thermal expansion (NTE) behavior, at least from 138 to 1300 K, and intense photoluminescence (PL) property is first reported in this paper. Temperature dependent Raman and PL spectral studies indicate that the material holds an orthorhombic structure down to about 74K and exhibits NTE property in the temperature range. The intense PL covering nearly the whole visible region was observed and can be deconvoluted into four bands, which present different shifts with elevation of temperature. The abundant optical property may be attributed to n- and p-type like co-doping effect and the specific structure with the abnormal thermal expansion property of the material. The integrated properties might suggest potential applications of this material in light emitting diodes and other light emitting devices. [ABSTRACT FROM AUTHOR]

In this paper, we propose a new device of spintronics by embedding two FeN4 molecules into armchair graphene nanoribbon and sandwiching them between N-doped graphene nanoribbon electrodes. Our first-principle quantum transport calculations show that the device is a perfect spin filter with high spin-polarizations both in parallel configuration (PC) and antiparallel configuration (APC). Moreover, negative differential resistance phenomena are obtained for the spin-down current in PC, and the spin-up and spin-down currents in APC. These transport properties are explained by the bias-dependent evolution of molecular orbitals and the transmission spectra. [ABSTRACT FROM AUTHOR]

Reflectance anisotropy (RA) spectra of naturally oxidized (001) surfaces of GaAs and InAs crystals are measured for photon energies from 1.5 up to 5.5 eV. The differential high-accuracy RA spectra reveal features substantially different from those caused by either a reconstruction of clean surface or a built-in near-surface electric field. Models of atomic structure with anisotropic transition layers of excess arsenic atoms specific for GaAs(001)/oxide and InAs(001)/oxide interfaces are proposed. In conformity with these models, a general theory of reflectance anisotropy is developed for semiconductor/ oxide interfaces within the Green's function technique. The theory takes into account the combined effect of local field due to interface dipoles and of intrinsic near-surface strain of the crystal. Measured RA spectra are analyzed in the model of valence-bond dipoles occupying a rectangular lattice in a multilayer medium. Comparing the measured and calculated spectra, we conclude that RA spectra of oxidized GaAs(001) and InAs(001) surfaces are simultaneously influenced by interface and near-surface anisotropies. The former is responsible for the broad-band spectral features which are associated with polarizability of the valence bonds attached to As atoms at the crystal/oxide interface. The near-surface anisotropy is due to inherent uniaxial straining the nearsurface region of crystal. The effect of strain on RA spectra is experimentally and theoretically substantiated for GaAs crystal wafers undergone a uniaxial applied stress. Basically, this work results in the following. It establishes the physical nature of different levels of RA spectra observed in a majority of papers, but never analyzed. It demonstrates how the studied features of RA spectra could be applied for optical characterization of strained interfaces and atomic layers. [ABSTRACT FROM AUTHOR]

Similar to other semiconductor technology, doping of carbon nanotube (CNT) thin film is of great significance for performance improvement or modification. However, it still remains a challenge to seek a stable and effective dopant. In this paper, we unitize several spectroscopic techniques and electrical characterizations under various conditions to investigate the effects of typical dopants and related methods. Nitric acid (HNO3) solution, I2 vapor, and CuI nanoparticles are used to modify a series of ultrathin CNT networks. Although efficient charge transfer is achieved initially after doping, HNO3 is not applicable because it suffers from severe reliability problems in structural and electrical properties, and it also causes a number of undesired structural defects. I2 vapor doping at 150 °C can form some stable C-I bonding structures, resulting in relatively more stable but less efficient electrical performances. CuI nanoparticles seem to be an ideal dopant. Photonic curing enables the manipulation of CuI, which not only results in the construction of novel CNT-CuI hybrid structures but also encourages the deepest level of charge transfer doping. The excellent reliability as well as processing feasibility identify the bright perspective of CNT-CuI hybrid film for practical applications. [ABSTRACT FROM AUTHOR]

This paper reports initial the demonstration of prototype Ge1-x-ySixSny light emitting diodes with distinct direct and indirect edges and high quality I-V characteristics. The devices are fabricated on Si (100) wafers in heterostructure pin geometry [n-Ge/i-Ge1-x-ySixSny/p-Ge(Sn/Si)] using ultra low-temperature (T<300 °C) depositions of the highly reactive chemical sources Si4H10, Ge4H10, Ge3H8, and SnD4. The Sn content in the i-Ge1-x-ySixSny layer was varied from ~3.5% to 11%, while the Si content was kept constant near 3%. The Si/Sn amounts in the p-layer were selected to mitigate the lattice mismatch so that the top interface grows defect-free, thereby reducing the deleterious effects of mismatch-induced dislocations on the optical/electrical properties. The spectral responsivity plots of the devices reveal sharp and well-defined absorption edges that systematically red-shift in the mid-IR from 1750 to 2100 nm with increasing Sn content from 3.5% to 11%. The electroluminescence spectra reveal strong direct-gap emission peaks and weak lower energy shoulders attributed to indirect gaps. Both peaks in a given spectrum red-shift with increasing Sn content and their separation decreases as the material approaches direct gap conditions in analogy with binary Ge1-ySny counterparts. These findings-combined with the enhanced thermal stability of Ge1-x-ySixSny relative to Ge1-ySny and the observation that ternary alloy disorder does not adversely affect the emission properties—indicate that Ge1-x-ySixSny may represent a practical target system for future generations of group-IV light sources on Si. [ABSTRACT FROM AUTHOR]

In this paper, the results of the investigation of cathodic plasma electrolytic oxidation (CPEO) of molybdenum at 160V in a mixed solution of borax, water, and ethylene glycol are presented. Real-time imaging and optical emission spectroscopy were used for the characterization of the CPEO. During the process, vapor envelope is formed around the cathode and strong electric field within the envelope caused the generation of plasma discharges. The spectral line shape analysis of hydrogen Balmer line Hβ (486.13 nm) shows that plasma discharges are characterized by the electron number density of about 1.4 × 1021m-3. The electron temperature of 15 000K was estimated by measuring molybdenum atomic lines intensity. Surface morphology, chemical, and phase composition of coatings formed by CPEO were characterized by scanning electron microscopy with energy dispersive x-ray spectroscopy and x-ray diffraction. The elemental components of CPEO coatings are Mo and O and the predominant crystalline form is MoO3. [ABSTRACT FROM AUTHOR]

We report in this paper the results of an experimental study on the spectral and dynamical characteristics of plasma emission induced by 1 mJ picoseconds (ps) Nd-YAG laser using spatially resolved imaging and time resolved measurement of the emission intensities of copper sample. This study has provided the experimental evidence concerning the dynamical characteristics of the excitation mechanisms in various stages of the plasma formation, which largely consolidate the basic scenarios of excitation processes commonly accepted so far. However, it is also clearly shown that the duration of the shock wave excitation process induced by ps laser pulses is much shorter than those observed in laser induced breakdown spectroscopy employing nanosecond laser at higher output energy. This allows the detection of atomic emission due exclusively to He assisted excitation in low pressure He plasma by proper gating of the detection time. Furthermore, the triplet excited state associated with He I 587.6 nm is shown to be the one most likely involved in the process responsible for the excellent spectral quality as evidenced by its application to spectrochemical analysis of a number of samples. The use of very low energy laser pulses also leads to minimal destructive effect marked by the resulted craters of merely about 10 μm diameter and only 10 nm deep. It is especially noteworthy that the excellent emission spectrum of deuterium detected from D-doped titanium sample is free of spectral interference from the undesirable ubiquitous water molecules without a precleaning procedure as applied previously and yielding an impressive detection limit of less than 10 μg/g. Finally, the result of this study also shows a promising application to depth profiling of impurity distribution in the sample investigated. [ABSTRACT FROM AUTHOR]

In this paper, the local magnetic properties of La-doped Fe3O4 (5% and 10%) bulk and Nanoparticles (NPs) samples were studied by measuring hyperfine interactions in a wide range of temperature from 10 to 900 K with perturbed γ-γ angular correlation spectroscopy using 111In(111Cd) and 140La(140Ce) as probe nuclei. Results for the temperature dependence of the magnetic hyperfine field (Bhf) for bulk and NP samples, pure and doped with La show that its behavior follows a second order Brillouin-like transition from which the Curie temperature (TC) was determined (TC∼ 855 K). Results also show two different regions in NP samples: the core where a minor fraction of probe nuclei with well defined magnetic dipole frequency was observed and the shell where a major fraction with broad distributed electric quadrupolar frequency (surface effect in NP) was observed. The Verwey transition TV ∼120 K, due the order disorder phase, was also observed in all samples. The results are discussed in terms of the magnetic exchange interaction between Fe2+ and Fe3+ ions in the two regions of NP. [ABSTRACT FROM AUTHOR]

In this paper, we present a new type of concealed and buried chemical detection system by stimulating and enhancing spectroscopic signatures with multifrequency excitations, which includes a low frequency gradient dc electric field, a high frequency microwave field, and higher frequency infrared (IR) radiations. Each excitation frequency plays a unique role. The microwave, which can penetrate into the underground and/or pass through the dielectric covers with low attenuation, could effectively transform its energy into the concealed and buried chemicals and increases its evaporation rate from the sample source. Subsequently, a gradient dc electric field, generated by a Van De Graaff generator, not only serves as a vapor accelerator for efficiently expediting the transportation process of the vapor release from the concealed and buried chemicals but also acts as a vapor concentrator for increasing the chemical concentrations in the detection area, which enables the trace level chemical detection. Finally, the stimulated and enhanced vapors on the surface are detected by the IR spectroscopic fingerprints. Our theoretical and experimental results demonstrate that more than sixfold increase in detection signal can be achieved by using this proposed technology. The proposed technology can also be used for standoff detection of concealed and buried chemicals by adding the remote IR and/or thermal spectroscopic and imaging detection systems. [ABSTRACT FROM AUTHOR]

Characteristics of a double-power electrode dielectric barrier discharge of an argon plasma jet generated at the atmospheric pressure are investigated in this paper. Time-averaged optical emission spectroscopy is used to measure the plasma parameters, of which the excitation electron temperature is determined by the Boltzmann's plot method whereas the gas temperature is estimated using a fiber thermometer. Furthermore, the Stark broadening of the hydrogen Balmer Hβ line is applied to measure the electron density, and the simultaneous presence of comparable Doppler, van der Waals, and instrumental broadenings is discussed. Besides, properties of the jet discharge are also studied by electrical diagnosis. It has been found that the electron densities in this argon plasma jet are on the order of 1014 cm-3, and the excitation temperature, gas temperature, and electron density increase with the applied voltage. On the other hand, these parameters are inversely proportional to the argon gas flow rate. [ABSTRACT FROM AUTHOR]

In 1948 Tellegen [Philips Res. Rep. 3, 81 (1948)] suggested that an assembly of the lined up electric-magnetic dipole twins can construct a new type of an electromagnetic material. Until now, however, the problem of creation of the Tellegen medium is a subject of strong discussions. An elementary symmetry analysis makes questionable an idea of a simple combination of two (electric and magnetic) dipoles to realize local materials with the Tellegen particles as structural elements. In this paper we show that in search of sources with local junctions of the electrical and magnetic properties one cannot rely on the induced parameters of small electromagnetic scatterers. No near-field electromagnetic structures and no classical motion equations for point charges give a physical basis for realization of sources with a local junction of the electrical and magnetic properties. We advance a hypothesis that local magnetoelectric (ME) particles should be physical objects with eigenmode oscillation spectra and nonclassical symmetry breaking effects. Our studies convincingly prove this assumption. We show that a quasi-two-dimensional ferrite disk with magnetic-dipolar-mode oscillations is characterized by unique symmetry features with topological phases resulting in appearance of the ME properties. An entire ferrite disk can be characterized as a combined system with the eigenelectric and eigenmagnetic moments. The fields near such a particle are distinguished by special symmetry properties. The questions raised in this paper give new insights into a problem of realization of local ME composites. [ABSTRACT FROM AUTHOR]

A fruitful approach to study the Fermi level position in GaInNAs/GaAs quantum wells (QWs) has been proposed in this paper. This approach utilizes contactless electroreflectance (CER) spectroscopy and a very simple design of semiconductor structures. The idea of this design is to insert a GaInNAs quantum well (QW) into a region of undoped GaAs layer grown on n-type GaAs substrate. The possible pinning of the Fermi level in the GaInNAs QW region modifies band bending in this system. In CER spectra both QW transitions and GaAs-related Franz-Keldysh oscillations (FKOs) are clearly observed. The analysis of QW transitions allows one to determine the band gap discontinuity at GaInNAs/GaAs interface whereas the analysis of FKOs allows one to determine the built-in electric field in the GaAs cap layer, and, finally, one is able to find the Fermi level pinning in GaInNAs QW region. [ABSTRACT FROM AUTHOR]

Tunable properties of materials are highly desirable in many applications. Metamaterials with negative properties (permittivity, permeability, or both) can have many applications if such properties can be made tunable or can be switched alternatively between positive and negative property behavior. This paper is a numerical study of the effect of substrate properties on the effective properties of a metamaterial slab. We present both simulation results and measurement data for a specific split-ring resonator structure for two different substrate thicknesses and demonstrate very good agreement. Then, using finite element simulation, varying the permittivity of the substrate from 1 to 14 while keeping its physical thickness fixed, we show that the resonance frequency drops from ∼16 to ∼6 GHz. Alternately, when the physical thickness of the substrate is varied from 0.05 to 2 mm, keeping its permittivity fixed, the resonance frequency decreases from ∼13.2 to ∼9.2 GHz. In each case, the effective refractive index is retrieved from the simulated S parameters (normalized reflected and transmitted fields). Our results show that the properties of metamaterials can be effectively tuned by changing the substrate properties. If the metamaterials are negative index materials, the effective refractive index can also be agilely switched between negative and positive values. This numerical study can serve as a guide for the design of voltage tunable dielectric substrates for realizing tunable metamaterials. [ABSTRACT FROM AUTHOR]

In the growing field of high-field terahertz (THz) spectroscopy, many ultrafast research labs are equipped to perform single-pulse (one-dimensional) THz measurements. We describe a simple and versatile method to modify one-dimensional THz experimental setups to generate two variably delayed THz pulses. This method optimizes the use of pump power to create two high-field THz pulses. Adding only a beam splitter and delay stage, research groups can access the wealth of information only available through two-dimensional (2D) measurements. We also provide useful guidance to those new to some challenges of 2D THz spectroscopy. [ABSTRACT FROM AUTHOR]

We report on a simple method for the characterization of optical absorption in semiconductors at photon energies below the bandgap energy. Therefore, we perform spatially resolved and intensity dependent deflection spectroscopy to measure the local optical absorption. To separate the absorption mechanisms, we take advantage of different intensity scaling of these mechanisms and extract the material parameters by fitting intensity dependent absorption to a physical model. This model takes into account relevant optical absorption processes like linear absorption from defect states, two-photon absorption, and the Franz–Keldysh effect. The method is exemplarily carried out for GaAs, Si, and CdTe. The literature values of the two-photon absorption coefficient are reproduced and the strength of the Franz–Keldysh effect in CdTe is determined for the first time as C FK = [ 8.7 , ... , 16.9 ] × 10 13 m − 1 s − 1 / 2 . [ABSTRACT FROM AUTHOR]

In this Tutorial, various methods of optical spectroscopy representing certain interest for magnetron discharge characterization are overviewed. The main principles, the implementation examples, and the selected results are given for each technique, accompanied by short discussions and suggestions for further reading. Both passive and active optical methods are covered, including optical absorption and laser-based techniques. The advantages and drawbacks of each diagnostic approach are critically analyzed. Special attention is devoted to the techniques extensively used by the authors in their own work, such as line ratio methods, absorption spectroscopy, interferometry, and laser-induced fluorescence. [ABSTRACT FROM AUTHOR]

In this paper, a stable and diffuse dielectric barrier discharge plasma excited by bipolar nanosecond pulse is obtained under a needle-array electrode at atmospheric pressure in air. The images of the diffuse discharge, electric characteristics, and the optical emission spectra emitted from the diffuse discharge are investigated under mono and multi needle electrodes configuration. The peak value of discharge current, the average power, the power density, the emission intensity of N2 (C3Πu →B3Πg, 0-0), and the gas temperature of the diffuse dielectric barrier discharge plasmas are investigated under different needle electrode numbers based on the waveforms of pulse voltage-current and the optical emission spectra. Moreover, the plasma area is obviously enlarged in the transverse direction when the needle electrode number is increased from 1 to 13. An area approximately 65x45mm2 diffuse discharge plasma region under 13 needle electrodes can be obtained and the discharge plasma still keeps good uniformity, which could be used for large-area surface processing in several fields spanning from biological sterilization and plasma medicine to surface modification of materials and synthesis of functional materials. [ABSTRACT FROM AUTHOR]

In this paper, we investigate the optical properties of confined electronic states in ultra-thin Al0.27Ga0.73As/GaAs/vacuum surface quantum wells by using photoreflectance spectroscopy at room temperature. Well-resolved doublet structures were found in the spectra. The energy of the features increases with decreasing well width in agreement with the predictions of a model of the transition energy between confined electron and hole states in a surface quantum well. Both the transition broadening and intensity behaviors are also well explained by the effective mass approximation theory. The offset between the un-perturbed theoretical transition energy and the experimental data has been explained by surface-state interaction effects. Moreover, the fact that the light hole ground state in the surface quantum well can be pushed out from the surface quantum well has been directly observed experimentally. [ABSTRACT FROM AUTHOR]

The dark current mechanism of extended wavelength InxGa1-xAs photo-detectors is still a debated issue. In this paper, the deep-level transient spectroscopy (DLTS) and dark current characteristics of InxGa1-xAs/InP detectors are investigated. Using trap parameters obtained from DLTS measurement, the device simulations of current-voltage characteristics are carried out by Silvaco Altas. The results reveal that the dark current at the low reverse bias voltage is associated with deep level trap induced trap assisted tunneling and Shockley-Read-Hall generation mechanism. The reduction of the deep level trap concentration in InxGa1-xAs absorption layer could dramatically suppress the dark current near zero bias in extended wavelength InxGa1-xAs/InP detectors. [ABSTRACT FROM AUTHOR]

This paper reports for the first time on a spectral degradation of photoluminescence from a-SiOx that occurs due to the storage of the samples in ambient atmosphere. The spectra of samples with an initial emission peak EPL,ini > 2.16 eV shift to lower energies. The degraded spectra have a common maximum at EPL,deg ≈ 2.16 eV. In the spectra of samples with EPL,ini < 2.16 eV, a high-energetic shoulder around EPL ≈ 2.16 eV develops. The initial photoluminescence spectra result from radiative recombination between tail states. The degraded luminescence is dominated by two effects. On the one hand, band tail luminescence still occurs. On the other hand, the prevalent emission around EPL,deg ≈ 2.16 eV originates from recombination attributed to Si = O bonds. [ABSTRACT FROM AUTHOR]

In this paper, the diffusivity in suspended monolayer graphene at low and high electric fields is investigated. The knowledge of this quantity and its dependence on the electric field is of primary importance not only for the investigation of the electronic transport properties of this material but also for the development of accurate drift-diffusion models. The results have been obtained by means of an ensemble Monte Carlo simulation. For the calculation of the diffusion coefficient, two different methods are considered, one based on the second central moment and the other one based on the Fourier analysis of velocity fluctuations, which are directly related to the noise behaviour at high frequencies. The diffusion coefficient is analyzed considering both parallel and transversal directions with regard to the applied field. Taking into account the importance of degeneracy in this material, the calculations are properly performed by considering an excess electron population obeying a linearized Boltzmann transport equation, which allows studying in an adequate fashion the diffusivity phenomena. The results show the importance of degeneracy effects at very low fields in which transport is mainly dominated by acoustic phonon scattering. Values of the diffusion coefficient larger than 40 000 cm2/Vs are obtained for a carrier concentration equal to 1012 cm-2. The correlation function of instantaneous velocity fluctuation is explained in terms of the wavevector distribution, and their power spectral density is evaluated in the THz range, showing an important dependence on the applied field and being strongly related to microscopic transport processes. [ABSTRACT FROM AUTHOR]

This paper reports on the effects of Li+, Na+, Mg2+, Ca2+, Sr2+, and Ba2+ co-doping on the scintillation properties of LaBr3:5%Ce3+. Pulse-height spectra of various gamma and X-ray sources with energies from 8 keV to 1.33 MeV were measured from which the values of light yield and energy resolution were derived. Sr2+ and Ca2+ co-doped crystals showed excellent energy resolution as compared to standard LaBr3:Ce. The proportionality of the scintillation response to gamma and X-rays of Ca2+, Sr2+, and Ba2+ co-doped samples also considerably improves. The effects of the co-dopants on emission spectra, decay time, and temperature stability of the light yield were studied. Multiple thermoluminescence glow peaks, decrease of the light yield at temperatures below 295 K, and additional long scintillation decay components were observed and related to charge carrier traps appearing in LaBr3:Ce3+ with Ca2+, Sr2+, and Ba2+ co-doping. [ABSTRACT FROM AUTHOR]

Results from a study on the charging effect of a-SiOxNy:H thin layers are presented in this paper. Issues related to structural and electrical characterization of these layers are discussed. Spectroscopic ellipsometry was used to determine accurately the layer thickness and their optical properties, while the Kelvin Force Microscopy (KFM) was applied to characterize the local electrical properties of the layers. Obtained results reveal that by tuning the Si-environment in a-SiOxNy:H thin dielectric layers, deposited in plasma assisted process, a strong modification of the surface and volume charge conduction can be achieved. Particularly, increasing Si-content in the a-SiOxNy:H layers rises the volume conduction and charges retention. Thus, local electrical properties of thin dielectric layers can be engineered in order to meet specific requirements. [ABSTRACT FROM AUTHOR]

Transmission spectra of two dimensional photonic crystals made of arrays of dielectric spheres are affected by the sphere dielectric permittivity. In this paper we present a systematic study of this influence for different compactness of the lattices. The transmission spectra were simulated by finite-different time-domain method. The system studied is a plane of spheres of dielectric permittivity [variant_greek_epsilon] (ranging from 2 to 9) arranged in triangular symmetry with varying compactness. Compactness is characterized as the ratio (R) of the sphere diameter ([uppercase_phi_synonym]) over the lattice period (Λ) and is considered from R = 1, close packed samples, to R = 0, 2. The transmission spectra of these samples are calculated for normal incident radiation of wavelengths in the interval extending from 0.8 to 5 times the sphere diameter. The sphere arrays present a number of resonant modes that appear as dips in the transmission spectra. The frequency position of the resonances is discussed in relation to those of the Mie modes of the isolated spheres and the frequency of the Bragg diffraction. For high values of [variant_greek_epsilon] and high compactness, the resonances of the single layer are dominated by the Mie modes, while for low [variant_greek_epsilon] and low compactness, the resonances tend to the Bragg diffraction values. It is possible to establish a quantitative threshold between these two regimes in terms of the effective permittivity. [ABSTRACT FROM AUTHOR]

This paper presents an ultrasonic technique for simultaneous determination of the complete set of acoustical and geometrical properties of a film or a thin layer in a stratified material embedded between two known materials using point-focus ultrasonic spectroscopy, which provides a high lateral resolution. The theoretical model of the two-dimensional spectrum Rt(θ,ω) of the stratified material is calculated as a function of six parameters of the unknown layer: longitudinal and transverse velocities cl, ct, attenuation αl, αt, density ρ, and thickness h, which fully determined the properties of the film. The experimental spectrum Re(θ,ω) can be measured by V(z,t) technique. A two-step algorithm is presented to decompose the searching process of parameters from one six-dimensional to two three-dimensional spaces. The sensitivity of the two-dimensional spectrum to individual properties and its stability against experimental noise are studied. The full set properties of a 250 μm thick stainless steel film and a 930 μm thick SiO2 thin layer of a three layered stratified material immersed in water are determined. The proposed technique used a point-focus transducer, which makes the setup simple and reliable. It allows measurement of the local properties of the film and enables precision material characterization. [ABSTRACT FROM AUTHOR]

The nature of ionic disorder and the effect of structural defects on the photocatalytic function of anatase are revisited in the light of direct experimental evidence retrieved on the molecular scale by cathodoluminescence (CL) spectroscopy. CL spectra, collected on different types of photocatalytically efficient or inefficient anatase films, embodied a composite optical response of electron-compensating majority types of ionic disorder in the anatase lattice. This paper describes the dual experimental output obtained by systematically monitoring optically active off-stoichiometry sites, as follows: (i) quantitative analyses of film stoichiometry including the interactions of different lattice-defect populations; and (ii) stability/evolution of off-stoichiometry sites upon post-fabrication annealing cycles and their effects on the photocatalytic activity of the films. CL experiments provided us with direct access to the structural state of the defective anatase lattice, thus unfolding some missing detail about the complex physicochemical interactions behind its photocatalytic efficiency. [ABSTRACT FROM AUTHOR]

Three-dimensional integration with through-silicon vias (TSVs) has emerged as an effective solution to overcome the wiring limit imposed on device density and performance. However, thermal stresses induced in TSV structures raise serious thermomechanical reliability concerns. In this paper, we analyze the near-surface stress distribution in a TSV structure based on a semi-analytic approach and finite element method, in comparison with micro-Raman measurements. In particular, the depth dependence of the stress distribution and the effect of elastic anisotropy of Si are illustrated to properly interpret the Raman data. The effects of the surface oxide layer and metal plasticity of the via material on the stress and Raman measurements are discussed. The near-surface stress characteristics revealed by the modeling and Raman measurements are important for design of TSV structures and device integration. [ABSTRACT FROM AUTHOR]

Amorphous silicon oxide SiO2, silicon nitride Si3N4, and silicon oxynitride SiOxNy are three key dielectrics in silicon devices. Implementation of nitrided oxide (oxynitride SiOxNy) as a gate dielectric in metal-oxide-semiconductor field effect transistors has been shown to significantly improve the reliability and lifetime of devices. Also, amorphous oxynitride is used as a tunnel dielectric in nonvolatile flash memory devices. The present paper is devoted to the experimental and theoretical study of silicon oxynitride electronic structure. The ionic formula of crystalline Si2N2O is deduced from the first principles. Effective masses of charge carriers in Si2N2O are calculated and compared with experimental data on tunnel injection in amorphous SiNxOy samples. Also experimental x-ray absorption and emission spectra are compared with the theoretically calculated ones. [ABSTRACT FROM AUTHOR]

The photoluminescence (PL) of Si nanocrystals (Si-nc) embedded in fused silica has been investigated under simultaneous excitations by laser and low energy proton beam. Ionodegradation of the sample, characterized by a rapid decrease and a spectral blueshift of the PL emission has been observed. These effects are associated with the creation of non-radiative centers in the Si-nc. Micro-Raman spectroscopy analysis shows that the proton beam has not changed the average size of Si-nc, but has disturbed a fraction of Si-Si bonds inside the Si-nc, which is consistent with both simulations and direct measurements. A post-annealing performed at 400 °C for 1 h can restore the structural properties of the Si-nc, but only a part of their nominal PL emission intensity is recovered. Characterization of the damage induced by low energy proton irradiation reported in this paper makes the use of light ion beams relevant for the experimental investigation of nanostructured systems, such as ionoluminescence measurements. [ABSTRACT FROM AUTHOR]

In this paper, we report a study on the optical and electrical properties of pure cotton fibers from chemically surface and morphology modified and coated with poly [2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) polymer samples by the dip-coating method. The treated and coated fibers properties were characterized by using scanning electron microscopy (SEM), photoluminescence, and I-V characteristics. The performance of fibers with the MEH-PPV polymer as a coating component was investigated and an excellent white-light emission which consists of blue-, green-, and red-light-emitting bands was demonstrated. I-V characteristics of the sandwich-type devices consisting of successive layers of ITO-PEDOT-PSS- CF/MEH-PPV-Ag show that upon light illumination the current increases in both the forward and reverse bias conditions which suggest that the photoresponse parameters for the heterojunction are better than the composite alone. [ABSTRACT FROM AUTHOR]

In this paper it is demonstrated micromagnetically the possibility to have high frequency and high power microwave emission at zero field in magnetic tunnel junctions with an off-centered vortex polarizer for current densities smaller than 107 A/cm2. We found power spectra characterized by two harmonics (around 6 GHz and 12 GHz) where the second one has the larger power. Due to the non-uniform configuration of the polarizer, the effect of the perpendicular torque is partially compensated by the Oersted field. Our predictions give rise to the design of a more compact and easily embedded spin-torque oscillators for all-on-chip applications. [ABSTRACT FROM AUTHOR]

In this paper, we examine the lattice thermal conductivity and dominant phonon scattering mechanisms of graphene. The interatomic interactions are modeled using the Tersoff interatomic potential and perturbation theory is applied to calculate the transition probabilities for three-phonon scattering. The matrix elements of the perturbing Hamiltonian are calculated using the anharmonic interatomic force constants obtained from the interatomic potential as well. The linearized Boltzmann transport equation is applied to compute the thermal conductivity of graphene for a wide range of parameters giving spectral and polarization-resolved information. The complete spectral detail of selection rules, important phonon scattering pathways, and phonon relaxation times in graphene are provided. We also highlight the specific scattering processes that are important in Raman spectroscopy-based measurements of graphene thermal conductivity, and provide a plausible explanation for the observed dependence on laser spot size. [ABSTRACT FROM AUTHOR]

In this paper, the ferroic properties of polycrystalline LuFe2O4 samples were carefully investigated, and a dissimilar charge ordered state was identified. Strong dielectric dispersion, between 350 K and 225 K; the formation of cluster glass magnetic phases in the same temperature range; and the existence of a ferrimagnetic transition at 230 K indicate the coupling between the ferroelectric and the magnetic orders. Mössbauer spectroscopic investigations, at room temperature, revealed unbalanced contributions of the ferric and ferrous iron ions to the charge ordered state. [ABSTRACT FROM AUTHOR]

In this paper, we study the relationship between nanoparticles' structure/composition and the chemical nature of the molecules to be identified in surface enhanced Raman scattering (SERS) spectroscopy. Three types of nanoparticles (NPs) were synthesized, including Ag, Au, and silver coated by gold (Ag@Au), in order to study the resulting enhancement effects. When a rhodamine 6G dye molecule was used to assemble the NPs, it was found that Ag NPs exhibited the highest enhancement activity. However, when a thiol containing 3-amino-1,2,4-triazole-5-thiol molecule was used to assemble the NPs, it was found that the Ag@Au NPs exhibited high Raman activity as well as the Ag NPs. The results give insight into how the chemical properties of the molecules to be analyzed play an important role in the SERS detection. An additional parameter of the analysis reveals the relative stability of the three types of NP probes synthesized with regard to oxidation in the presence of different mediating molecules and varying salt concentrations. The results are of interest in designing and employing NP probes to detect biological molecules using colorimetric and SERS based approaches. [ABSTRACT FROM AUTHOR]

The potential for terahertz (THz) spectroscopy to detect explosives and other materials of interest is complicated by rough surface scattering. Our previous work has demonstrated that by averaging over diffuse observation angles and surfaces, spectral features could be recovered from laboratory measurements and numerical computer simulations. In addition to averaging, a low-pass cepstrum filter was used to reduce noise due to the random rough surface. This paper expands on these concepts by using the cepstrum of both the random rough surface and the material properties of the target material to choose an optimal cutoff frequency for the filter. The utility of these techniques is evaluated using laboratory measurements and Monte Carlo simulations for many sets of random surface realizations. The Kirchhoff Approximation is used to quickly model diffuse scattering from dielectric materials with gradually undulating rough surfaces when the incident and diffuse scattering angles are near the surface normal. The ability to recover the spectral features of rough dielectric materials from diffuse THz scattering may prove useful for the design of future security screening systems. [ABSTRACT FROM AUTHOR]

The present paper reports the energy loss near-edge structure (ELNES) study of monoclinic HfO2 (m-HfO2) and tantalum doped m-HfO2 (Ta0.1Hf0.9O2) thin films prepared by radio frequency magnetron co-sputtering method. A change in the O K-ELNES spectra was observed as the amount of dopant increases. In order to precise the common features and the differences as a function of Ta defect nature (substitutional or interstitial) in HfO2, the O K-ELNES were commented with respect to density functional theory calculations implemented in Vienna ab initio simulation package code. The calculated Ta doped HfO2 band structure showed that substitutional tantalum is the dominant defect and the spectral differences between doped and non-doped HfO2 are mainly originated from the change in the local cation distribution around the oxygen atoms. [ABSTRACT FROM AUTHOR]

The intermediate band (IB) concept is regarded as a way of exceeding the Shockley-Queisser efficiency limit through a more efficient use of the solar spectrum. Quantum dots (QDs) have been proposed to achieve a practical implementation of this concept. So far, only few QD material systems, such as In(Ga)As/GaAs and related compounds, have been tested experimentally giving rise to two important conclusions: on the one hand, the verification of the concept fundamentals and on the other hand, the need to seek new QD candidate materials in order to produce high efficiency devices. As regards the latter, in this paper we present an analytical model to assess the potential of QD IB solar cells (IBSCs) consisting of the following steps: (1) calculation of the heterojunction band alignment taking material strain into account, (2) calculation of the QD confined energy levels constituting the IB, and (3) calculation of the efficiency limits in the detailed balance realm and optimization of the QD systems in terms of QD size and material composition. The search criteria are reviewed and three QD systems (InAs/AlxGa1-xAs, InAs1-yNy/AlAsxSb1-x, and InAs1-zNz/Alx[GayIn1-y]1-xP) are identified together with their optimum QD sizes. Efficiencies of over 60% are calculated at maximum light concentration. [ABSTRACT FROM AUTHOR]

In weakly absorbing materials such as polymers and soft tissue, x-ray phase sensitive imaging methods can provide substantially enhanced contrast compared to classical, absorption based radiography. For specific applications, the latter can be applied in a dual energy scheme that helps to identify, discriminate and/or quantify materials. In this paper, we report on a new method that combines the idea of dual energy with x-ray phase contrast imaging and thus provides material sensitivity among poor absorbers. The dual energy modality cannot be applied in common phase contrast imaging schemes because of their demand for limited bandwidth or even monochromatic x-ray sources. Our new interferometric method based on diffraction gratings can overcome this shortcoming and thus simultaneously deliver x-ray phase contrast images for two distinct x-ray energy intervals. It has been shown that high quality images can be obtained with the dual energy phase setup. Energy spectra with 40 kV and 70 kV were applied to obtain low- and high-energy images, respectively. Furthermore, an estimation of the effective energy in the image formation process for absorption and phase contrast was experimentally determined. Examples are shown for which the dual energy phase contrast modality delivers complementary information on material composition when compared with the conventional dual energy scheme. [ABSTRACT FROM AUTHOR]

In this paper, a theoretical background of subgap modulated photocurrent experiment is presented. It allows the investigation of the density of states (DOS) distribution, directly from the active region of a semiconductor heterojunction device. The junction is illuminated with a modulated subgap light excitation (i.e., light with photon energy lower than the band gap of the active layer). Under specific considerations for the applied reverse bias voltage and the bias-light level, a simple theoretical relation of the imaginary part of the photocurrent versus the modulation angular frequency allows the determination of the energy profile of the gap states. This technique has been successfully applied to a Ga free Cu(In,Ga)Se2 based solar cell to investigate the DOS distribution in the band gap of the absorber. Two distinct defect distributions have been exhibited in the absorber layer of the studied solar cell. [ABSTRACT FROM AUTHOR]

Spectral radiant flux is the primary optical characteristic of a light source, determining the luminous flux and color. Much research is dedicated to the modeling of light-emitting diode (LED) spectra and their temperature dependence, allowing for the simulation of optical properties in various applications. Most of the spectral radiant flux models that have been published so far are purely mathematical. For this paper, spectral radiant fluxes of commercial single color LED packages have been measured in a custom made integrating sphere at several junction temperatures by active cooling and heating with a Peltier element. A spectrum model at 300 K is constructed where the Boltzmann free carrier distribution and carrier temperature are included. Subsequently, the model is extended with the carrier temperature variation, the band gap energy shift, and the nonradiative recombination rate decrease with junction temperature. As a result, the skewness variation, peak frequency shift, and peak value change in the spectrum with temperature can be predicted. The model has been validated by comparing flux and color coordinates of measured and simulated spectra at 340 K junction temperature. In practice, only two spectral flux measurements at different junction temperatures are needed to accurately simulate a single color spectrum at any temperature. [ABSTRACT FROM AUTHOR]