1. Flexoelectric behavior in PIN-PMN-PT single crystals over a wide temperature range.
- Author
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Longlong Shu, Tao Li, Zhiguo Wang, Fei Li, Linfeng Fei, Zhenggang Rao, Mao Ye, Shanming Ke, Wenbin Huang, Yu Wang, and Xi Yao
- Subjects
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ELECTRIC properties of single crystals , *FLEXOELECTRICITY , *ELECTRIC properties , *PEROVSKITE , *LEAD compounds , *THICK films , *PERMITTIVITY measurement , *CRYSTAL structure - Abstract
Flexoelectricity couples strain gradient to polarization and usually exhibits a large coefficient in the paraelectric phase of the ferroelectric perovskites. In this study, we employed the relaxor 0.3Pb(In1/2Nb1/2)O3-0.35Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PIN-PMN-PT) single crystals to study the relationship between flexoelectric coefficients and the crystal structure. The flexoelectric coefficients in PIN-PMN-PT single crystal are found to vary from 57 μC/m at orthorhombic/monoclinic phase to 135 μC/m at tetragonal phase, and decreases to less than 27 μC/m in the temperature above Tm. This result discloses that ferroelectricity can significantly enhance the flexoelectricity in this kind of perovskite. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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