1. Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy.
- Author
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Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., and Yang, W.-C.
- Subjects
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THIN films , *THERMAL properties , *PROPERTIES of matter , *TRANSITION metals , *OXIDES , *MICROSCOPY , *ANNEALING of metals , *SILICIDES - Abstract
The thermal stability of thin films (3 nm) of transition-metal (TM) oxides (TiO2, ZrO2, and HfO2) grown on ultrathin (∼0.5 nm) SiO2 buffer layers on Si(100) surfaces was investigated with ultraviolet photoelectron emission microscopy (UV-PEEM). The decomposition of the TM oxides was observed in the PEEM during ultrahigh-vacuum annealing at temperatures of ∼870, ∼900, and ∼1000 °C for the TiO2, ZrO2, and HfO2, respectively. Following the decomposition reaction, atomic force microscopy measurements of the annealed surfaces revealed a high density of islands in the decomposed regions. The degradation of the TM oxide films is attributed to a reaction occurring at defects at the TM oxide/SiO2/Si interfaces, which forms SiO species. Once a portion of the interfacial SiO2 layer is desorbed as a result of this reaction, Si from the substrate can diffuse into contact with the TM oxide layer, resulting in the formation of a TM silicide and the evolution of SiO. This process continues until the entire TM oxide layer is consumed and only silicide islands remain. [ABSTRACT FROM AUTHOR]
- Published
- 2006
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