1. Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device.
- Author
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Takayoshi Katase, Yuki Suzuki, and Hiromichi Ohta
- Subjects
- *
THIN film transistors , *THIN film devices , *TRANSISTORS , *ELECTROLYTES , *ELECTRICAL conductors - Abstract
The electrochemical switching of SrCoOx-based non-volatile memory with a thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivities (σ) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO·7Al2O3 film with a nanoporous structure (Calcium Aluminate with Nanopore), but the electrochemical oxidation/reduction of the SrCoOx layer required the application of a high gate voltage (Vg) up to 20V for a very long current-flowing-time (t) ~40min, primarily due to the low σ [2.0 x 10-8S cm-1 at room temperature (RT)] of leakage-free water. We then controlled the r of the leakage-free electrolyte, infiltrated in the a-NaxTaO3 film with a nanopillar array structure, from 8.0 x 10-8S cm-1 to 2.5 x 10-6S cm-1 at RT by changing the x = 0.01–1.0. As the result, the t, required for the metallization of the SrCoOx layer under small Vg = –3V, becomes two orders of magnitude shorter with increase of the σ of the a-NaxTaO3 leakage-free electrolyte. These results indicate that the ion migration in the leakage-free electrolyte is the rate-determining step for the electrochemical switching, compared to the other electrochemical process, and the high σ of the leakage-free electrolyte is the key factor for the development of the non-volatile SrCoOx-based electro-magnetic phase switching device. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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