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A low-voltage and low-power true single-phase flip-flop that minimum the total transistor count by using the pass transistor logic circuit scheme is proposed in this paper. Optimization measures lead to a new flip-flop design with better various performances such as speed, power, energy, and layout area. Based on post-layout simulation results using the TSMC CMOS 180 nm and 90 nm technologies, the proposed design achieves the conventional transmission-gate-based flip-flop design with a 53.6% reduction in power consumption and a 63.2% reduction in energy, with 12.5% input data switching activity. In order to further the performance parameters of the proposed design, a shift-register design has been realized. Experimental measurements at 0.5 V/0.5 MHz show that this proposed design reduces power consumption by 47.3% while achieving a layout area reduction of 30.5% compared to the conventional design. [ABSTRACT FROM AUTHOR]

The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron–electron (e–e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (lnT) dependence of the Hall slope RH = δRxy/δB = δρxy/δB can be used to probe e–e interaction effects at various temperatures even when the measured resistivity does not show a lnT dependence due to strong electron–phonon scattering. Nevertheless, one needs to be certain that the change of RH is not caused by an increase of the carrier density by checking the magnetic field position of the longitudinal resistivity minimum at different temperatures. Given the current challenges in gating graphene on SiC with a suitable dielectric layer, our results suggest that capping a van der Waals material on graphene is an effective way to modify the electronic properties of monolayer graphene on SiC. [ABSTRACT FROM AUTHOR]