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Dielectric energy storage capacitors are promising avenues for high power density and fast charge/discharge applications. This study focused on the deposition of Bi 3.25 La 0.75 Ti 3 O 12 (BLT) films onto Pt/Ti/SiO 2 /Si substrates by a sol-gel technology. Through the synergistic strategy of interface engineering and the preferred orientation of BLT film, the residual polarization was minimized, and the breakdown field strength was enhanced. As a result, the recoverable energy density (U rec) was significantly improved to 62.97 J/cm3 with a high energy storage efficiency (η) of 85.88 %. Notably, the synthesized BLT film exhibited excellent temperature (25–150 °C) and frequency (100 Hz-10 kHz) stability of U rec (>30 J/cm3) and η (>75 %) at ∼2200 kV/cm. The finding demonstrates the potential of BLT thin film as a lead-free material for the next generation of pulse power capacitors. Overall, the synergistic approach of interface engineering and preferred orientation proves to be an effective way to improve the performance of dielectric energy storage capacitors. [ABSTRACT FROM AUTHOR]

[Display omitted] • Erianin alleviates neurological deficits and reduces infarct volume in CI/RI rat model. • Erianin promotes anti-inflammatory microglial polarization and reduces pro-inflammatory markers such as IL-4 and IL-10. • Erianin suppresses NF-κB pathway by preventing p65 nuclear translocation. • Erianin inhibits PI3K and Akt phosphorylation, downregulating BCL2 and preventing microglial apoptosis. Cerebral ischemia–reperfusion injury (CI/RI) is a leading cause of disability and mortality worldwide, with limited therapeutic options available. Erianin, a natural compound derived from traditional Chinese medicine, has been reported to possess anti-inflammatory and neuroprotective properties. This study aimed to investigate the therapeutic potential of Erianin in CI/RI and elucidate its underlying mechanisms. Network pharmacology analysis predicted that Erianin could target the PI3K/AKT pathway, which are closely associated with CI/RI. In vivo experiments using a rat model of CI/RI demonstrated that Erianin treatment significantly alleviated neurological deficits, reduced infarct volume, and attenuated neuronal damage. Mechanistically, Erianin inhibited microglial cell polarization towards the pro-inflammatory M1 phenotype, as evidenced by the modulation of specific markers. Furthermore, Erianin suppressed the expression of pro-inflammatory cytokines and mediators, such as TNF-α, IL-6, and COX-2, while enhancing the production of anti-inflammatory factors, including Arg1, CD206, IL-4 and IL-10. In vitro studies using oxygen-glucose deprivation/reoxygenation (OGD/R)-stimulated microglial cells corroborated the anti-inflammatory and anti-apoptotic effects of Erianin. Notably, Erianin inhibited the NF-κB signaling pathway by inhibiting p65 phosphorylation and preventing the nuclear translocation of the p65 subunit. Collectively, these findings suggest that Erianin represents a promising therapeutic candidate for CI/RI by targeting microglial cell polarization and inflammation. [ABSTRACT FROM AUTHOR]

The original definition of multiferroics is that one owns two or three "ferro" properties, such as ferroelectricity, ferroelasticity, and ferromagnetism. Furthermore, novel effects would be generated by the cross-coupling effect among various orders of multiferroic materials, and it has a broad application prospect in electronic information, sensing, storage, wireless network and other fields. At present, researchers are still focus on the multiferroic materials with strong magnetoelectric coupling effect at room temperature. However, the realization and application of devices based on multiferroics are still on the way. Strain engineering is an effective way that can influence the physical properties of multiferroic materials. The physical properties of materials such as electricity, magnetism, and photoacoustic could be influenced by strain engineering through the interaction of lattice with electrons, spins, and orbits. Tuning the structural and physical properties of ferroelectric thin films by strain has been paid extensive attention. Through investigating the research of strain engineering in multiferroic materials in this paper, herein, the strain engineering in multiferroics are summarized and effect of strain engineering on the physical properties of multiferroics is reviewed. It is prospected that the current work may provide research ideas for the investigation and development of multiferroic materials. [ABSTRACT FROM AUTHOR]

• High-quality Bi 3.25 La 0.75 Ti 3 O 12 /SrTiO 3 thin films were prepared by sol–gel. • The interface hinders the development of the electronic tree, achieving enhanced breakdown strength. • Enhanced energy storage performance was achieved in laminated Bi 3.25 La 0.75 Ti 3 O 12 /SrTiO 3 film. With the trend of miniaturization and integration of integrated circuits, thin film dielectric capacitors with high energy storage density and fast charge/discharge rate have attracted more and more attention. In this work, lead-free thin film dielectric capacitors with different stacking structures based on Bi 3.25 La 0.75 Ti 3 O 12 and SrTiO 3 were prepared by a sol–gel method on Pt/Ti/SiO 2 /Si substrate. By processing optimization, enhanced breakdown strength was obtained with fine hysteresis loops for the laminated Bi 3.25 La 0.75 Ti 3 O 12 /SrTiO 3 films, leading to excellent energy storage performance of energy storage density ∼ 58.96 J/cm3 and efficiency ∼ 81.59 %, which is attractive for the dielectric film energy storage capacitors. [ABSTRACT FROM AUTHOR]

NaNbO 3 (NN)-based dielectric ceramics for energy storage have garnered significant interest due to their high saturation polarization, low residual polarization, and superior breakdown strength (E b). However, the low recoverable energy storage density (W rec) and efficiency (η) significantly limited their practical application. Herein, BiFeO 3 (BF) was incorporated into NN to optimize the energy storage performance. The NN-BF ceramics exhibited pronounced antiferroelectric (AFE) relaxor phase, alongside grain size reduction and E b enhancement, which contributed to a significant increase of W rec and η. Specially, the optimum W rec of 4.43 J/cm³ and η of 71.51 % were achieved at the composition of 0.9NN-0.1BF. Besides, stable energy storage performance was maintained over a wide temperature range (20–120 °C). These results highlight the potential of NN-BF relaxor AFE ceramics as promising candidates for high-performance energy storage applications. [ABSTRACT FROM AUTHOR]

Piezocatalysis is capable of harnessing mechanical energy for environmental remediation, which is regarded as a green and promising technology to be exploited. Piezoceramics are struggling to be used as highly efficient piezocatalysts due to their grain size reaching tens of micrometers usually. Herein, a feasible and straightforward method is proposed to turn piezoceramic powders into highly efficient piezocatalysts by integrating size optimization and oxygen vacancy modulation. This strategy is validated by treating lead‐free Sr0.5Ba0.5Nb2O6 (SBN) piezoceramic powders with high‐energy ball‐milling (hBM). The rate constant k value of 46.95 × 10−3 min−1 for rhodamine B (RhB) piezocatalytic degradation of SBN‐hBM‐12h is almost 18 times higher than that of pristine SBN. Besides, the SBN‐hBM‐12 h catalyst performed superior antibacterial properties against Escherichia coli. The enhanced piezocatalytic efficiency is attributed to the introduced abundant oxygen vacancies absorbing and activating O2 into reactive oxygen species. Well‐modulated oxygen vacancy concentration can effectively accelerate the generation and separation of free carriers. However, the excess oxygen vacancies in SBN render the weakened piezoresponse thus suppressing the piezocatalytic activity. This study elucidates the critical role of oxygen vacancies in piezocatalysis and provides insights into the development of efficient piezocatalysts. [ABSTRACT FROM AUTHOR]

CuInP2S6 (CIPS) is a novel two-dimensional (2D) van der Waals (vdW) ferroelectric layered material with a Curie temperature of TC~315 K, making it promising for great potential applications in electronic and photoelectric devices. Herein, the ferroelectric and electric properties of CIPS at different thicknesses are carefully evaluated by scanning probe microscopy techniques. Some defects in some local regions due to Cu deficiency lead to a CuInP2S6–In4/3P2S6 (CIPS–IPS) paraelectric phase coexisting with the CIPS ferroelectric phase. An electrochemical strain microscopy (ESM) study reveals that the relaxation times corresponding to the Cu ions and the IPS ionospheres are not the same, with a significant difference in their response to DC voltage, related to the rectification effect of the ferroelectric tunnel junction (FTJ). The electric properties of the FTJ indicate Cu+ ion migration and propose that the current flow and device performance are dynamically controlled by an interfacial Schottky barrier. The addition of the ferroelectricity of CIPS opens up applications in memories and sensors, actuators, and even spin-orbit devices based on 2D vdW heterostructures. [ABSTRACT FROM AUTHOR]