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• SOI UTBB nMOSFETs are operated at cryogenic temperature with different gate lengths. • The impact of the back-gate on the device performance is systematically studied. • A good performance of devices is obtained at cryogenic temperature by back-gate. • Short channel effects are investigated at cryogenic temperature. In this paper we present an experimental study of SOI UTBB n-MOSFETs at cryogenic temperatures. The device employs fully silicided source/drain with dopant segregation formed by "Implantation Into Silicide" (IIS) process. The impact of the back-gate (V back) on the device performance is systematically investigated. The results demonstrate that V back is essential to tune the threshold voltage V th. And optimization of V back values can improve the subthreshold swing (SS), Drain-Induced Barrier Lowering (DIBL), transconductance G m and mobility at cryogenic temperatures, providing a potential to fulfill the ultra-low power requirement for quantum computing application. [ABSTRACT FROM AUTHOR]

• UTBB SOI Schottky-Barrier MOSFETs are operated at cryogenic temperature. • The impact of the back-gate on the device performance is systematically studied. • The resonant tunneling and hot-carrier effects are observed at cryogenic temperature. Schottky-Barrier (SB) MOSFETs are fabricated and characterized at room temperature (RT) and 5.4 K. The substrate bias impacts on SB MOSFETs are systematically investigated by measuring the threshold voltage V th , subthreshold swing SS and transconductance G m , showing the back gate has almost no effects on these parameters at 5.4 K, in contrast to the results measured at RT. Some oscillations are created in G m curves by the quantization effect and resonant tunneling at 5.4 K. A large hysteresis is found by enhanced dynamic threshold operation at 72 K due to hot carriers and the presence of a Schottky barrier at the drain. [ABSTRACT FROM AUTHOR]

Abstract: Growing demand in automobile safety system raises a requirement to electronic devices being self‐powered, stable, and durable. Herein, a self‐powered Hall vehicle sensor (SPHVS) is demonstrated for automobile safety system, which integrates the triboelectric nanogenerator, the management circuit, the magnet, and the Hall element. The tribotronic constant current source is proposed to steadily power the Hall element in rotational motion at any different speeds. Furthermore, the performances of the SPHVS for vehicle speed sensing and vehicle braking monitoring are systematically investigated, which exhibits wide sensing range, great stability, and excellent sensitivity. This work clearly proposes a promising solution for speed sensing and braking monitoring, and indicates the potential applications of power tribotronics for the self‐powered electronic devices in prospective automobile industry. [ABSTRACT FROM AUTHOR]

Ocean waves are one of the most promising renewable energy sources for large‐scope applications. Recently, triboelectric nanogenerator (TENG) network has been demonstrated to effectively harvest water wave energy possibly toward large‐scale blue energy. However, the absence of effective power management severely restricts the practicability of TENGs. In this work, a hexagonal TENG network consisting of spherical TENG units based on spring‐assisted multilayered structure, integrated with a power management module (PMM), is constructed for harvesting water wave energy. The output performance of the TENG network is found to be determined by water wave frequencies and amplitudes, as well as the wave type. Moreover, with the implemented PMM, the TENG network could output a steady and continuous direct current (DC) voltage on the load resistance, and the stored energy is dramatically improved by up to 96 times for charging a capacitor. The TENG network integrated with the PMM is also applied to effectively power a digital thermometer and a wireless transmitter. The thermometer can constantly measure the water temperature with the water wave motions, and the transmitter can send signals that enable an alarm to go off once every 10 s. This study extends the application of the power management module in the water wave energy harvesting. [ABSTRACT FROM AUTHOR]

Security monitoring and precaution for private information and property plays a key role in the smart home system. In this work, a triboelectric nanogenerator‐based active sliding sensor is demonstrated which can monitor the position, displacement, velocity, and direction of a contact sliding objects. The device consists of a mover and a stator which operate in sliding mode. Two aligned column arrays of copper electrodes are coated on the substrate as the mover, while two interdigitated copper electrode pairs with relative position shift are coated under a polytetrafluoroethylene film as the stator. The experimental results show that a single device can generate a voltage of about 5 V at a resistance load of 60 MΩ at a sliding velocity of 0.5 m s–1. The sliding sensor can detect an ultralow velocity in 0.001 m s–1 as well as the sliding direction of the mover. The sensor can be fixed on the drawer and door to detect the motion parameters which are sent to a remote client application for security monitoring in smart home systems. The proposed sliding sensor has great potential in the Internet of things, personal motion feature recognition, and meandering trajectory tracking. The interdigitated electrode‐based triboelectric sliding sensor (IETSS) for security monitoring can monitor the position, displacement, velocity, and direction of an in‐plane motion object. The IETSS can be fixed on the drawer and door to detect the motion parameters which are sent to a remote client application for security monitoring in smart home systems. [ABSTRACT FROM AUTHOR]

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