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In this paper, a detailed physical analysis and an analytical derivation of the degradation of the output resistance (Rout) observed in relatively long-channel laterally nonuniformly doped devices with halo implants are presented. Two-dimensional device simulations were performed, and the simulations show that the channel can be split into two uniformly doped transistors in series for the purpose of analysis. The lower doped bulk transistor is on the source side, while the higher doped halo transistor is toward the drain end. Based on this two-transistor analysis, a simple Rout degradation model is derived for implementation in a MOSFET compact model. [ABSTRACT FROM AUTHOR]

Reports that as metal-oxide-semiconductor (MOS) devices have been scaled to smaller feature sizes, thinner gate oxides and higher levels of channel doping have been used in order to satisfy the need for high drive currents and minimal short-channel effects. General scaling methodology; Description of the Three-Subband Model; Effects of quantization in hole inversion layers.