1. Observation of flexoelectric effect in PECVD silicon nitride.
- Author
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Nguyen, B. H., Wu, C., Czarnecki, P., and Rochus, V.
- Subjects
- *
PLASMA-enhanced chemical vapor deposition , *SILICON nitride , *DIELECTRIC materials , *ELECTROMECHANICAL effects , *FLEXOELECTRICITY , *SILICON nitride films - Abstract
Flexoelectricity, a universal electromechanical coupling effect present in all dielectric materials, has garnered significant theoretical and experimental interest in recent years, particularly in ferroelectric perovskite oxides. However, nitride-based materials have received considerably less attention. In this Letter, we report the observation of direct flexoelectric effect in plasma-enhanced chemical vapor deposition silicon nitride thin film with a thickness of 200 nm. From three-point bending tests, we determined the effective flexoelectric coefficient of Si3N4 to be 1.64 ± 0.22 nC / m. Additionally, the measured flexoelectric-induced voltages are consistent with finite element computational models. This observation of the flexoelectric coupling effect could contribute to the development of silicon nitride-based micro-scale devices. [ABSTRACT FROM AUTHOR]
- Published
- 2025
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