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1. Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis.

2. Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy.

3. Epitaxy of GaN Nanowires on Graphene.

4. Impact of the GaN nanowire polarity on energy harvesting.

5. GaN nanowires for piezoelectric generators.

6. N-Polar GaN NanowiresSeeded by Al Droplets on Si(111).

7. Si Incorporation in InP Nanowires Grownby Au-Assisted Molecular Beam Epitaxy.

8. Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures

9. Atomic Step Flow on a Nanofacet.

10. High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires.

11. Back Cover: GaN nanowires for piezoelectric generators (Phys. Status Solidi RRL 5/2014).

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