Search

Abstract: A new carbon-based thermal stability improvement technique is proposed for nickel silicide. Carbon implantation is well known to improve the thermal stability of Ni-based silicides, but its process window is small. An experiment has been performed to identify and introduce new process steps which improve the thermal stability and which can be integrated into a CMOS technology platform without a significant cost increase. No yield issues have been observed up to 700°C 30min post-silicidation thermal budget even for the narrowest silicided silicon lines. NiPtSi encroachment, which is one of the main yield killers for Sub-65nm technologies, has not been seen. The device scalability is not affected and a similar performance has been achieved with an additional post-silicidation thermal budget. Through in-depth understanding of this approach, new integration schemes like for instance a gate-last process flow can be envisioned. [Copyright &y& Elsevier]

Abstract: PBTI degradation on FinFETs with HfO2/TiN gate stack (EOT<1nm) is studied. Thinner TiN layer decreases interfacial oxide thickness, and reduces PBTI lifetime. This behavior is consistent with the results in planar devices. Corner rounding effect on PBTI is also analyzed. Finally, charge pumping measurements on devices with several fin widths devices apparently show a higher density of defects in the top-wall high-κ oxide than in the sidewall of the fin. This could explain more severe PBTI degradation. [Copyright &y& Elsevier]

Abstract: Ultrathin EOT-values are achieved by using optimized processing conditions and interface layer scavenging in metal-gated (TiN and TaN) based planar and bulk-FinFET devices. EOT values down to 4.5Å in the planar devices and in bulk-FinFETs are demonstrated. Improved EOT-leakage current scaling is observed with the use of chemical oxides as compared to thermally grown as interface layer for the . In contrast, the mobility is found independent of the compared interface layers, processing conditions and metal electrodes and follows one trend-line with EOT. The FinFET devices show decreased -values and improved mobility for more narrow fin widths. [Copyright &y& Elsevier]

Highlights: [•] Symmetric Doped Double-Gate Model (SDDGM) is applied to bulk FinFETs. [•] This model describes the transistor behavior for N-type and P-type devices. [•] This model describes the transistor behavior in all operating regions. [•] Bulk FinFETs are modeled at temperatures from 25 to 175°C. [•] Only nine parameters are used. [ABSTRACT FROM AUTHOR]

Abstract: This work presents a process to fabricate Bulk FinFETs with advancements in critical fabrication steps such as the shallow trench oxide recess and the adjustment of the fin height. These steps are accomplished with the adoption of Siconi™ Selective Material Removal (SMR™) in the fabrication flow. FinFETs obtained with this new integration scheme were tested in a co-fabrication process flow proposed to integrate planar CMOS and Bulk FinFETs on the same wafer. Morphological and electrical results indicate perfectly filled trenches, a better fin height control and a Bulk FinFET static performance similar to planar CMOS. The 20nm wide fins are fabricated using 193nm illumination lithography followed by a series of trimming steps during the trench etching, the filling and a fin re-oxidation during the steam densification of the trench filling oxide. Trench depth is 300nm and the electrically active fin height is 40nm. [Copyright &y& Elsevier]

Purpose To ascertain the association between fundus drusens and biological parameters in a colony of 1174 monkeys. Methods Presence or absence of drusens was determined through the assessment of fundus photos taken during 2011 - 2013 from 1,174 Macaca fascicularis at Tsukuba Primate Research Center. Biological data from these monkeys including blood test result, age, sex, and body weight were tested for an association between the presence of drusens by applying t-test and logistic regression analysis. Results We identified 387 and 787 monkeys with and without drusens, respectively. Among them, 317 and 628 monkeys with and without drusens that had a complete biological data set were further studied. After comparing each parameter in monkeys with and without drusens, 13 factors with a significance of P < 0.1 ( t-test) were selected for logistic regression analysis. Regression analysis showed association of age (odds ratio: 1.092, 95% confidence interval: 1.061-1.125) and platelet count (odds ratio: 1.022, 95% confidence interval: 1.005-1.038) with drusens. In addition, an association was implicated between drusens and white blood cell count (odds ratio: 1.005, 95% confidence interval: 1.000-1.011). Conclusions Age, platelet count, and white blood cell count may be associated with the development of drusens in Macaca fascicularis. [ABSTRACT FROM AUTHOR]