1. Effect of residual stress on nanoindented property of SiCSimultilayers.
- Author
-
Bo-Hsiung Wu, Chen-Kuei Chung, Ting-Ruen Shih, Cheng-Chang Peng, and Udit-Surya Mohanty
- Subjects
- *
RESIDUAL stresses , *SILICON carbide , *ION bombardment , *SPUTTERING (Physics) , *HARDNESS , *THICK films , *INDENTATION (Materials science) - Abstract
The effect of residual stress on the nanoindentation property of SiCSimultilayers has been investigated. Sandwiched SiCSimultilayers were deposited on Si(100) substrates by means of ultrahigh-vacuum ion-beam sputtering at room temperature (RT). Four structures with different Si top-layer thickness of 5, 10, 25, and 50 nmand the constant thickness of CSiunderlayer at 10050 nmwere investigated in this study. The residual stress of the SiCSi(510050 nmnmnmthick) film was about −17.76 GPaunder compression, and its hardness was 20.39 GPaat RT. The compressive residual stress was decreased to −5.54 GPawith the increased thickness of Si toplayer up to 50 nm, and its hardness was reduced to ∼16.22 GPaat RT. The effect of Si top-layer thickness (5–50 nm)on SiCSiresidual stress on the nanoindentation property were also discussed. The results showed that the thicker was the Si toplayer, the lower was the residual stress and hardness, which was good for the suppression of the buckling or wrinkling in the CSi-nanocomposite film. [ABSTRACT FROM AUTHOR]
- Published
- 2009