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Abstract: This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Element Analysis for a high-control fabrication process of vertical Si-fins on bulk and we provide many useful fabrication expedients. Metal gate FinFETs have been successfully electrically characterized, showing excellent subthreshold slope SS=72mV/dec and high Ion /Ioff ≈106 ratio, with power consumption of the order of tens of nW. The FinFETs have also been proved to correctly behave in a liquid environment. We also present the HfO2 characterization towards full pH response sensing applications. [Copyright &y& Elsevier]

Highlights: [•] We extend commercial TCAD for semiconductors to simulate electronic biosensors. [•] Screening at high electrolyte concentration strongly reduces their DC sensitivity. [•] We analyze the relevance of steric and polarization effects in nano-electrodes sensors. [Copyright &y& Elsevier]