1. Self-focusing SIMS: A metrology solution to area selective deposition.
- Author
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Spampinato, Valentina, Armini, Silvia, Franquet, Alexis, Conard, Thierry, van der Heide, Paul, and Vandervorst, Wilfried
- Subjects
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ATOMIC layer deposition , *MASS spectrometry , *COMPLEX ions , *ALUMINUM oxide ,SIMS (Information retrieval system) - Abstract
Graphical abstract Highlights • Cluster ions can only be formed from their nearest constituent atoms. • Compositional information is self-focused to areas where all the constituents are present. • Nano-patterned device made of alternated metal and dielectric lines is analyzed. • Information at the nanoscale can be obtained thanks to the Self-focusing SIMS concept. • Selective deposition of a blocking layer on the metal is assessed. • Selective deposition of a dielectric on the dielectric is assessed. Abstract Micro- and nano-electronics is increasingly relying on heterogeneous, confined and three-dimensional structures, to continue the downscaling required for the next technology generations. Area-selective atomic layer deposition (ALD) is one suited methodology to create nm-scale features through (1) the area-selective self-assembly of a blocking layer (i.e. a thiol deposited on copper) and (2) the ALD growth on the areas not covered with the blocking layer (i.e. a dielectric deposited on low-k). Assessing the efficiency and defectivity of selective deposition on such samples would require a lateral resolution much smaller than the feature size of interest. Hence the need for characterization techniques appropriate to the device's dimensions. Recently, thanks to the Self-Focusing Secondary Ions Mass Spectrometry (SF-SIMS) concept, the SIMS applicability to analyze the composition of narrow (<20 nm) trenches has been enabled through the selection of characteristic cluster ions exclusively confined to the areas of interest. In this paper, we show that the SF-SIMS concept can be extended to area-selective ALD processes. More specifically, the assessment of the blocking layer deposition on copper is studied using the characteristic copper-sulphur cluster ions while the potential reaction with the low-k material is checked by looking at silicon-sulphur cluster ions. In the same way, the ALD growth of aluminum oxide on the low-k material is assessed using silicon-aluminum clusters while the detection of copper-aluminum clusters is exploited to assess the efficiency of the blocking layer. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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