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The recent realizations of the quantum anomalous Hall effect (QAHE) in MnBi2Te4 and MnBi4Te7 benchmark the (MnBi2Te4)(Bi2Te3)n family as a promising hotbed for further QAHE improvements. The family owes its potential to its ferromagnetically (FM) ordered MnBi2Te4 septuple layers (SLs). However, the QAHE realization is complicated in MnBi2Te4 and MnBi4Te7 due to the substantial antiferromagnetic (AFM) coupling between the SLs. An FM state, advantageous for the QAHE, can be stabilized by interlacing the SLs with an increasing number n of Bi2Te3 quintuple layers (QLs). However, the mechanisms driving the FM state and the number of necessary QLs are not understood, and the surface magnetism remains obscure. Here, robust FM properties in MnBi6Te10 (n = 2) with Tc ≈ 12 K are demonstrated and their origin is established in the Mn/Bi intermixing phenomenon by a combined experimental and theoretical study. The measurements reveal a magnetically intact surface with a large magnetic moment, and with FM properties similar to the bulk. This investigation thus consolidates the MnBi6Te10 system as perspective for the QAHE at elevated temperatures. [ABSTRACT FROM AUTHOR]

Heteroanionic materials show promising potential as 2D semiconductors due to their tunable band gaps, making them excellent candidates for photocatalytic water splitting applications. We conducted detailed theoretical and experimental analysis of two selected materials by synthesizing crystals through chemical vapor transport and investigating the impact of anion variation on crystal structure and properties. Using powder X-ray diffraction and convergent beam electron diffraction, we elucidated the non-centrosymmetric space groups of these compounds. Thermochemical studies revealed the influence of the crystal structure on the decomposition points of both compounds. Theoretical investigations predict that both materials are indirect bandgap semiconductors, which is confirmed by electron energy loss spectroscopy and photoluminescence studies. [ABSTRACT FROM AUTHOR]

Utilizing an interplay between band topology and intrinsic magnetism, the two-dimensional van der Waals (vdW) system MnBi 2 Te 4 provides an ideal platform for realizing exotic quantum phenomena and offers great opportunities in the emerging field of antiferromagnetic spintronic technology. Yet, the fabrication of MnBi2Te4-based nanodevices is hindered by the high sensitivity of this material, which quickly degrades when exposed to air or to elevated temperatures. Here, we demonstrate an alternative route of fabricating vdW-MnBi2Te4-based electronic devices using the cryogenic dry transfer of a printable circuit embedded in an inorganic silicon nitride membrane. The electrical connections between the thin crystal and the top surface of the membrane are established through via contacts. Our magnetotransport study reveals that this innovative via contact approach enables exploring the MnBi2Te4-like sensitive 2D materials and engineering synthetic heterostructures as well as complex circuits based on the two-dimensional vdW systems. [ABSTRACT FROM AUTHOR]