1. Tunneling magnetoresistance and electroresistance in Fe/PbTiO3/Fe multiferroic tunnel junctions.
- Author
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Jian-Qing Dai
- Subjects
- *
MAGNETORESISTANCE , *ELECTRIC resistance , *TUNNEL junctions (Materials science) , *MULTIFERROIC materials , *LEAD titanate - Abstract
We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO3/Fe multiferroic tunnel junction with asymmetric TiO2- and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6pz orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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