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We have been studying the application of ion implantation technology to power semiconductors. The ion implantation technology uses a stencil mask instead of a photo-resist mask in order to reduce the number of processes and achieve high-energy mask ion implantation. Deterioration in implantation pattern accuracy, which is caused by thermal deformation of the stencil mask due to ion beam incidence, has become a critical issue because of the heavy use of high doses of ion implantation in the power semiconductor. In this research, we developed a stencil mask structure that drastically reduces thermal deformation, and technology capable of realizing the ring pattern needed in power semiconductors. © 2006 American Institute of Physics [ABSTRACT FROM AUTHOR]