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In situ techniques are essential to understanding the behavior of electrocatalysts under operating conditions. When employed, in situ synchrotron grazing-incidence X-ray diffraction (GI-XRD) can provide time-resolved structural information of materials formed at the electrode surface. In situ cells, however, often require epoxy resins to secure electrodes, do not enable electrolyte flow, or exhibit limited chemical compatibility, hindering the study of non-aqueous electrochemical systems. Here, a versatile electrochemical cell for air-free in situ synchrotron GI-XRD during non-aqueous Li-mediated electrochemical N2 reduction (Li-N2R) has been designed. This cell not only fulfills the stringent material requirements necessary to study this system but is also readily extendable to other electrochemical systems. Under conditions relevant to non-aqueous Li-N2R, the formation of Li metal, LiOH and Li2O as well as a peak consistent with the a-phase of Li3N was observed, thus demonstrating the functionality of this cell toward developing a mechanistic understanding of complicated electrochemical systems. [ABSTRACT FROM AUTHOR]

The behavior of n-Si(111) photoanodes covered by monolayer sheets of fluorinated graphene (F-Gr) was investigated under a range of chemical and electrochemical conditions. The electrochemical behavior of n-Si/F-Gr and np+-Si/F-Gr photoanodes was compared to hydride-terminated n-Si (n-Si−H) and np+-Si−H electrodes in contact with aqueous Fe(CN)63-/4- and Br2/HBr electrolytes as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. Illuminated n-Si/F-Gr and np+-Si/F-Gr electrodes in contact with an aqueous K3(Fe(CN)6/K4(Fe(CN)6 solutions exhibited stable short-circuit photocurrent densities of ∼10 mA cm-2 for 100,000 s (>24 h), in comparison to bare Si electrodes, which yielded nearly a complete photocurrent decay over ∼100 s. X-ray photoelectron spectra collected before and after exposure to aqueous anodic conditions showed that oxide formation at the Si surface was significantly inhibited for Si electrodes coated with F-Gr relative to bare Si electrodes exposed to the same conditions. The variation of the open-circuit potential for n-Si/F-Gr in contact with a series of nonaqueous electrolytes of varying reduction potential indicated that the n-Si/F-Gr did not form a buried junction with respect to the solution contact. Further, illuminated n-Si/F−Gr electrodes in contact with Br2/HBr(aq) were significantly more electrochemically stable than n-Si−H electrodes, and n-Si/F−Gr electrodes coupled to a Pt catalyst exhibited ideal regenerative cell efficiencies of up to 5% for the oxidation of Br- to Br2. [ABSTRACT FROM AUTHOR]

The behavior of graphene-coated n-type Si(111) photoanodes was compared to the behavior of H-terminated n-type Si(111) photoanodes in contact with aqueous K3[Fe(CN)6]/K4[Fe(CN)6] as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. The n-Si/Graphene electrodes exhibited stable short-circuit photocurrent densities of over 10 mA cm-2 for >1000 s of continuous operation in aqueous electrolytes, whereas n-Si-H electrodes yielded a nearly complete decay of the current density within ~100 s. The values of the open-circuit photovoltages and the flat-band potentials of the Si were a function of both the Fermi level of the graphene and the electrochemical potential of the electrolyte solution, indicating that the n-Si/Graphene did not form a buried junction with respect to the solution contact. [ABSTRACT FROM AUTHOR]

[Display omitted] • W contact plugs in CMOS IC wafers have been found to undergo corrosion. • Mismatch in the CMP processing times results in extended DI rinsing under pressure. • W corrosion occurs due to the DI rinsing followed by the cleaning step post CMP. • Mega-sonic cleaning in alkaline pH solution can accelerate dissolution of W. • DI rinsing time and pressure can be optimized to minimize W corrosion. During chemical mechanical polishing (CMP) process optimization, a unique corrosion defect was identified in the tungsten (W) contact plugs, which were investigated to develop practical solutions to improve CMP mass productivity. The corrosion defect occurred in the absence of external incident energy and was observed to occur only at the W plugs connected to the P+/n-well close to the wafer edge. To examine the root cause of the corrosion, a series of experiments was carried out at each W CMP step, using in-line defect inspection. Additional experiments were conducted using on-line inductively coupled plasma mass spectrometry (ICP-MS) to understand pH- and potential-dependent electrochemical dissolution behaviors of W. Experimentally, W corrosion was confirmed to be exacerbated if the surface oxide of the W plugs is removed by the deionized water (DIW) rinsing step under wafer pressurization, then exposed to DIW and alkaline cleaning solution. Although the DIW rinsing step is commonly performed to clean polishing pads right after the main polishing, a small amount of applied pressure (0.5 psi) without slurry supply can lead to corrosion defects. This wear-induced corrosion of the W plugs can be prevented by removing the applied pressure during the post DIW rinsing step of W CMP. [ABSTRACT FROM AUTHOR]

The article presents a study on the efficient synthesis for π Pyridine complex using borane adduct and the binding of heterocyclic's reactivity with nitrogen. The study used the ability of certain transition metal complexes in binding the aromatic molecules through two carbon. Acetylation is a result of increased basicity and nucleophilicity of the nitrogen through coordination of tungsten and pyridine.