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The article discusses the distinctive properties of laser lights from organic semiconductor and their relation to resonators for lasing recognition. It states that laser light properties are significant in the studies of thin-films and nanostructure researchers. It notes that emission is one of the important properties of a laser which is also sensitive to cavity resonator's misalignment. It concludes that the discussion can also help develop organic semiconductor injection lasers.

Abstract: A convergent procedure has been developed for the preparation of fac-tris(2-phenylpyridyl)iridium(III) cored dendrimers with first- and second-generation dendrons that each contain one and two carbazole units, respectively. The carbazole moieties are both an electroactive moiety and a branching unit in the dendron. The photoluminescence quantum yields of neat films of the first- and second-generation dendrimers were 48±5% and 39±4%, respectively. These values are substantially higher than for equivalent first- and second-generation dendrimers with phenyl moieties at the branching points of the dendrons instead of the carbazole units. The improved solid state luminescent properties can be attributed to the increased steric demand of the carbazole unit relative to the phenyl ring, which reduces more effectively the intermolecular interactions that cause the cores to be less emissive. Electrochemical experiments showed that both the core of the dendrimers and the dendrons were electroactive. Thin film hole mobilities of the first-generation dendrimer with the carbazolyl branching units in the dendrons were found to be higher than the equivalent dendrimer with biphenyl branching units across a range of fields. [Copyright &y& Elsevier]

Excited‐state intramolecular proton transfer (ESIPT) chromophores have attracted considerable attention as promising gain media for organic lasers, particularly in amplified spontaneous emission (ASE) due to their advantageous characteristics. These include an intrinsic four‐level photocycle, significant separation between absorption and emission spectra, and enhanced emission efficiency facilitated by aggregate‐induced emission. This study investigates the amplification of π‐conjugation in hydroxyphenyl‐benzothiazole (HBT)‐based ESIPT materials via dimerization to intensify ESIPT processes, surge absorption cross‐section, enhance optical gain, and induce a redshift in emission spectra. Computational study shows that the ESIPT processes of the new dimers proceed through single proton transfer where the second proton transfer is not accessible. While the ESIPT photocycle does not extend to both HBT moieties of the dimers, the dimers foster more efficient ESIPT processes in both solution and solid states than their parent HBT, resulting in substantial Stokes shifts (>233 nm). Moreover, both dimers exhibit enhanced solid‐state photoluminescence quantum yields, reaching up to ≈55%, and low solid‐state ASE threshold values (≈6.8 µJ cm−2) in the red region. Remarkably, the new dimers demonstrate excellent thermal and photostability with notably reduced spectral overlap compared to their parent, highlighting the potential utility of the approaches to developing new organic solid‐state laser materials. [ABSTRACT FROM AUTHOR]

We report on solution-processed light emitting field-effect transistors (LEFETs) that incorporate symmetric high work function (WF) source and drain metal electrodes. A key architectural design is the incorporation of a conjugated polyelectrolyte (CPE) electron injection layer atop the emissive layer. The device structure also comprises a hole-transporting layer underneath the emissive layer. Both holes and electrons are injected from stable, high WF metal though the CPE layer leading to electroluminescence near the electron-injecting electrode. With the benefits of the simplicity in device fabrication, the LEFETs incorporating CPEs are interesting structures for integrated organic optoelectronic devices. [ABSTRACT FROM AUTHOR]

We show that p- and n-type light emitting field-effect transistors (LEFETs) can be made using “superyellow” as a light-emitting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as a p-type material and a naphthalene di-imide as an n-type material. By connecting two of these LEFETs, we have demonstrated a light emitting complementary inverter (LECI). The LECI exhibited electrical and optical characteristics in the first and third quadrant of the transfer characteristics with voltage gain of 6 and 8, respectively. [ABSTRACT FROM AUTHOR]

Solution processed light emitting field-effect transistors (LEFETs) with peak brightness exceeding 2500 cd/m2 and external quantum efficiency of 0.15% are demonstrated. The devices utilized a bilayer film comprising a hole transporting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b] thiophene) and a light emitting polymer, Super Yellow, a polyphenylenevinylene derivative. The LEFETs were fabricated in the bottom gate architecture with top-contact Ca/Ag as source/drain electrodes. Light emission was controlled by the gate voltage which controls the hole current. These results indicate that high brightness LEFETs can be made by using the bilayer film (hole transporting layer and a light emitting polymer). [ABSTRACT FROM AUTHOR]

A simple way of tuning the emission color in solution processed phosphorescent organic light emitting diodes is demonstrated. For each color a single emissive spin-coated layer consisting of a blend of three materials, a fac-tris(2-phenylpyridyl)iridium (III) cored dendrimer (Ir–G1) as the green emitter, a heteroleptic [bis(2-phenylpyridyl)-2-(2′-benzo[4,5-α]thienyl)pyridyl]iridium (III) cored dendrimer [Ir(ppy)2btp] as the red emitter, and 4,4′-bis(N-carbazolyl) biphenyl (CBP) as the host was employed. By adjusting the relative amount of green and red dendrimers in the blends, the color of the light emission was tuned from green to red. High efficiency two layer devices were achieved by evaporating a layer of electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene (TPBI) on top of the spin-coated emissive layer. A brightness of 100 cd/m2 was achieved at drive voltages in the range 5.3–7.3 V. The peak external efficiencies at this brightness ranged from 31 cd/A (18 lm/W) to 7 cd/A (4 lm/W). [ABSTRACT FROM AUTHOR]

We have studied triplet-triplet annihilation in neat films of electrophosphorescent fac-tris(2-phenylpyridine) iridium(III) [Ir(ppy)3]-cored dendrimers containing phenylene- and carbazole-based dendrons with 2-ethylhexyloxy surface groups using time-resolved photoluminescence. From measured annihilation rates, the limiting current densities above which annihilation would dominate in dendrimer light-emitting devices are found to be >1 A/cm2. The triplet exciton diffusion length varies in the range of 2–10 nm depending on the dendron size. The distance dependence of the nearest-neighbor hopping rate shows that energy transfer is dominated by the exchange mechanism. [ABSTRACT FROM AUTHOR]

We demonstrate efficient tunable blue electroluminescence from blends of two solution-processible light-emitting dendrimers. These materials can be blended to form optical quality thin films with no phase-separation effects, irrespective of the blend ratio. External quantum efficiencies of 1% have been measured for the blend systems and the emission color can be tuned from deep blue (emission peak 401 nm) to blue green (477 nm) by blend composition. A power efficiency of 1.5 lm/W (at 200 Cd/m2 and 5.4 V) is measured for a single layer, first-generation blue-green fluorene-thiophene dendrimer. These results show that by choice of a dendrimer structure with common branching units and surface groups, dissimilar cores can be blended with excellent miscibility. This provides a simple way of tuning the color of organic light-emitting diodes. [ABSTRACT FROM AUTHOR]

Chromophores undergoing excited‐state intramolecular proton transfer (ESIPT) feature a distinct four‐level photocycle and significant Stokes shift, which make them ideal for achieving population inversion upon photoexcitation, a fundamental prerequisite for lasing, by mitigating the concerns of self‐absorption owing to spectral overlap. This study focuses on functionalizing the hydroxyphenyl‐benzothiazole (HBT) ESIPT laser dye through the introduction of fluorene and phenyl‐carbazole moieties at the para‐position to the hydroxyl group, to demonstrate amplified spontaneous emission (ASE) activities. The synthesized HBT derivatives not only exhibit high thermal and photostability, but also high photoluminescence quantum yields, exceeding 40%, which is noteworthy for ESIPT materials emitting in the yellow–orange to red color ranges. Computational analyses show that these new HBT materials possess substantially lower ESIPT energy barriers, compared to their parent HBT, facilitating their efficient ESIPT processes. Moreover, these derivatives demonstrate a high radiative rate of 1.47 × 108 s−1. Thin films of a fluorene‐substituted HBT (HBT‐pFl) show a low solid‐state amplified spontaneous emission threshold value of 3.8 µJ cm−2 at 582 nm, representing the lowest reported solid‐state ASE threshold for laser dyes in the orange emission region (575–600 nm) to date. [ABSTRACT FROM AUTHOR]

Different approaches have been introduced to raise the response speed of bulk heterojunction‐based organic photodiodes (OPDs), with the best‐performing devices now having speeds in the MHz range. In most organic photodiodes, the response speed is commonly assumed to be due to transit time of charge carriers. Upon investigating fluence‐dependent photoresponse of different OPDs, it is found here that bimolecular recombination dictates the response speed at higher fluence levels. Herein, four different organic blend based photodiode systems and their response speed to a range of incident optical fluences are reported. A steep variation in response speed, depending upon the blend system is observed. Using experimental and theoretical studies, the intensity‐dependent response speeds are attributed to differences in the suppressed recombination factor. A high factor enables faster response times in the regime of higher light intensity. This new approach to high‐speed detections has implications for the design of high‐speed organic photodetectors, especially in applications where the speed of the photodetector is most important irrespective of the intensity of the incident signal. [ABSTRACT FROM AUTHOR]

The facile oxidation of Sn2+ to Sn4+ poses an inherent challenge that limits the efficiency and stability of tin‐lead mixed (Sn−Pb) perovskite solar cells (PSCs) and all‐perovskite tandem devices. In this work, we discover the sustainable redox reactions enabling self‐healing Sn−Pb perovskites, where their intractable oxidation degradation can be recovered to their original state under light soaking. Quantitative and operando spectroscopies are used to investigate the redox chemistry, revealing that metallic Pb0 from the photolysis of perovskite reacts with Sn4+ to regenerate Pb2+ and Sn2+ spontaneously. Given the sluggish redox reaction kinetics, V3+/V2+ ionic pair is designed as an effective redox shuttle to accelerate the recovery of Sn−Pb perovskites from oxidation. The target Sn−Pb PSCs enabled by V3+/V2+ ionic pair deliver an improved power conversion efficiency (PCE) of 21.22 % and excellent device lifespan, retaining nearly 90 % of its initial PCE after maximum power point tracking under light for 1,000 hours. [ABSTRACT FROM AUTHOR]

The facile oxidation of Sn2+ to Sn4+ poses an inherent challenge that limits the efficiency and stability of tin‐lead mixed (Sn−Pb) perovskite solar cells (PSCs) and all‐perovskite tandem devices. In this work, we discover the sustainable redox reactions enabling self‐healing Sn−Pb perovskites, where their intractable oxidation degradation can be recovered to their original state under light soaking. Quantitative and operando spectroscopies are used to investigate the redox chemistry, revealing that metallic Pb0 from the photolysis of perovskite reacts with Sn4+ to regenerate Pb2+ and Sn2+ spontaneously. Given the sluggish redox reaction kinetics, V3+/V2+ ionic pair is designed as an effective redox shuttle to accelerate the recovery of Sn−Pb perovskites from oxidation. The target Sn−Pb PSCs enabled by V3+/V2+ ionic pair deliver an improved power conversion efficiency (PCE) of 21.22 % and excellent device lifespan, retaining nearly 90 % of its initial PCE after maximum power point tracking under light for 1,000 hours. [ABSTRACT FROM AUTHOR]

Hyperfluorescent organic light‐emitting diodes (HF‐OLEDs) enable a cascading Förster resonance energy transfer (FRET) from a suitable thermally activated delayed fluorescent (TADF) assistant host to a fluorescent end‐emitter to give efficient OLEDs with relatively narrowed electroluminescence compared to TADF‐OLEDs. Efficient HF‐OLEDs require optimal FRET with minimum triplet diffusion via Dexter‐type energy transfer (DET) from the TADF assistant host to the fluorescent end‐emitter. To hinder DET, steric protection of the end‐emitters has been proposed to disrupt triplet energy transfer. In this work, the first HF‐OLEDs based on structurally well‐defined macromolecules, dendrimers is reported. The dendrimers contain new highly twisted dendrons attached to a Cibalackrot core, resulting in high solubility in organic solvents. HF‐OLEDs based on dendrimer blend films are fabricated to show external quantum efficiencies of >10% at 100 cd m−2. Importantly, dendronization with the bulky dendrons is found to have no negative impact to the FRET efficiency, indicating the excellent potential of the dendritic macromolecular motifs for HF‐OLEDs. To fully prevent the undesired triplet diffusion, Cibalackrot dendrimers HF‐OLEDs are expected to be further improved by adding additional dendrons to the Cibalackrot core and/or increasing dendrimer generations. [ABSTRACT FROM AUTHOR]

External quantum efficiency (EQE) roll‐off under high current injection has been one of the major limiting factors toward the development of organic semiconductor laser diodes (OSLDs). While significant progress in this regard has been made on organic semiconductors (OSCs) emitting in the blue–green region of the visible spectrum, OSCs with longer wavelength emission (>600 nm) have fallen behind in both material development and the advancement in device architectures suitable for the realization of OSLDs. Therefore, to make simultaneous incremental advancements, a host–guest system comprising of a high performing poly(9,9‐dioctylfluorene‐alt‐benzothiadiazole) (F8BT) polymer and an efficient small molecule laser dye, dithiophenyl diketopyrrolopyrrole (DT‐DPP), is used. This combination provides an extremely low amplified spontaneous emission threshold of 4.2 µJ cm−2 at an emission wavelength of 620 nm. The solution‐processed organic light‐emitting diodes (OLEDs) fabricated using this system exhibit a high external quantum efficiency (EQE) of 2.6% with low efficiency roll‐off and high current injection up to 90 A cm−2 to yield ultrahigh luminance of over 1.5 million cd m−2. [ABSTRACT FROM AUTHOR]

By comparing the changes in π-π* absorption with the transconductance in PEO-LiCIO4 electrolyte-gated EEls, we have demonstrated that the high channel currents obtained at low gate voltages result from reversible electrochemical doping of the semiconducting polymer film. At low temperatures, the conductivity of the electrochemically doped poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTI-C14, is nonlinear with a crossover from du(T)/dT> 0 to da(7)IdT≈ 0 as a function of the source- drain voltage. High current densities, up to 106 Ncm2 at 4.2 K, can be sustained in the electrochemically doped PBTTT-C14 films. [ABSTRACT FROM AUTHOR]

The field of organic photodiodes (OPDs) has witnessed continuous development in the last decade. Although a considerable portion of electron‐donating materials are polymers, there has been an existential gap in deciphering the influence of the polymer's molecular‐weight on the photodiode performance. We take up OPDs based on 5,5′‐[(9,9‐Dioctyl‐9H‐fluorene‐2,7‐diyl)bis(2,1,3‐benzothiadiazole‐7,4diylmethylidyne)]bis[3‐ethyl‐2‐thioxo‐4‐thiazolidinone] (FBR) acceptor material blended with three different molecular‐weights of defect‐free form of a well‐known donor polymer poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) are taken up, and their optoelectronic performance along with morphological characteristics are studied. Disparity of up to a decade in key photodetecting characteristics is observed. Further, the tools of near‐edge X‐ray absorption fine‐structure spectroscopy, resonant soft X‐ray scattering spectroscopy, atomic force microscopy, and time‐delayed collection‐field measurements are employed to decipher the difference in the fundamental photo‐physical processes and the operating mechanisms of the OPDs. It is concluded that the molecular weight and the resulting morphology of the active layer strongly influence photodiode performance, in particular, dark current, linear dynamic range, and specific‐detectivity. [ABSTRACT FROM AUTHOR]

Iridium-based phosphorescent dendrimers have shown much promise as highly efficient light emitting materials for organic light emitting diodes (OLEDs). Here we report the effects of modifying the chemical structure on the emissive and charge transport properties of Ir(ppy)3 based electrophosphorescent dendrimers. We investigate a novel para linked first generation (G1) iridium dendrimer. This material is compared to G1 and G2 meta linked dendrimers. We show that by blending these dendrimers into a CBP host, high external quantum efficiencies of over 10% and luminous efficiencies of 27 lm/W can be achieved. [Copyright &y& Elsevier]

Organic semiconductors possessing tightly bound Frenkel excitons are known to be attractive candidates for demonstrating polariton lasing at room temperature. As polariton lasing can occur without inversion, it is a potential route to very low threshold coherent light sources. However, so far, the thresholds of organic polariton lasers have generally been much higher than those of organic photon lasers. Here this problem has been addressed by investigating two new organic molecules with a structure combining fluorene and carbazole groups. The materials are readily deposited from solution and exhibit high photoluminescence quantum yields, high absorption coefficients, and large radiative decay rates in neat films. Room temperature polariton lasing is realized in both materials with incident thresholds of 13.5 and 9.7 µJ cm−2, corresponding to absorbed thresholds of 3.3 and 2.2 µJ cm−2, respectively. These are the lowest values reported to date for polariton lasing in organic semiconductor materials, and approach typical values for organic photon lasers. The step‐like power dependent blue‐shift of polariton modes indicates an interplay between different depletion channels of the exciton reservoir. This work brings practical room temperature polaritonic devices and future realization of electrically driven polariton lasers a step closer. [ABSTRACT FROM AUTHOR]

The ability of a light‐sensor to detect fast variation in incident light intensity is a vital feature required in imaging and data transmission applications. Solution‐processed bulk heterojunction (BHJ) type organic photodiodes (OPDs) have gone through key developments, including dark current mitigation and longer linear dynamic range. In contrast, there has been less focus on increasing OPD response speed (f–3dB). Here, bulk heterojunction OPDs based on electron‐donating polymer poly[thiophene‐2,5‐diyl‐alt‐5,10‐bis((2‐hexyldecyl)oxy)dithieno[3,2‐c:3′,2′‐h][1,5]naphthyridine‐2,7‐diyl] (or PTNT) and electron‐accepting phenyl‐C71‐butyric acid methyl ester (or PC71BM) are reported. The intrinsic charge transport characteristics required for fast speed OPDs are discussed, and an analytical model for the same is developed. The OPDs present 0.8 MHz f–3dB under no applied voltage bias for a typical blend ratio of 1:1 by weight. It is shown that balanced electron and hole mobility is a critical criterion for faster speed OPDs, which can be realized by tuning the composition ratio of the bulk heterojunction. By tuning PTNT and PC71BM blend ratio, the f–3dB was successfully raised by more than quadruple to 4.5 MHz. The findings provide a tool to set device architecture for faster next‐generation light sensors. [ABSTRACT FROM AUTHOR]

N‐Heterocyclic carbene (NHC) cyclometalated gold(III) complexes remain very scarce and therefore their photophysical properties remain currently underexplored. Moreover, gold(III) complexes emitting in the blue region of the electromagnetic spectrum are rare. In this work, a series of four phosphorescent gold(III) complexes was investigated bearing four different NHC monocyclometalated (C^C*)‐type ligands and a dianionic (N^N)‐type ancillary ligand ((N^N)=5,5'‐(propane‐2,2‐diyl)bis(3‐(trifluoromethyl)‐1 H‐pyrazole) (mepzH2)). The complexes exhibit strong phosphorescence when doped in poly(methyl methacrylate) (PMMA) at room temperature, which were systematically tuned from sky‐blue [λPL=456 nm, CIE coordinates: (0.20, 034)] to green [λPL=516 nm, CIE coordinates: (0.31, 0.54)] by varying the monocyclometalated (C^C*) ligand framework. The complexes revealed high quantum efficiencies (ϕPL) of up to 43 % and excited‐state lifetimes (τ0) between 15–266 μs. The radiative rate constant values found for these complexes (kr=103–104 s−1) are the highest found in comparison to previously known best‐performing monocyclometalated gold(III) complexes. Density functional theory (DFT) and time‐dependent DFT (TD‐DFT) calculations of these complexes further lend support to the excited‐state nature of these complexes. The calculations showed a significant contribution of the gold(III) metal center in the lowest unoccupied molecular orbitals (LUMOs) of up to 18 %, which was found to be unique for this class of cyclometalated gold(III) complexes. Additionally, organic light‐emitting diodes (OLEDs) were fabricated by using a solution process to provide the first insight into the electroluminescent (EL) properties of this new class of gold(III) complexes. [ABSTRACT FROM AUTHOR]

Over the years, achieving efficient electroluminescence (EL) while simultaneously having low light amplification thresholds under optical excitation has been the key to progression toward the long‐thought objective of electrically pumped organic lasers. While significant progress in this regard has been made for organic semiconductors emitting in the blue–green region of the visible spectrum, organic laser dyes with low‐energy emission (>600 nm) still suffer from high amplified spontaneous emission (ASE) thresholds and low external quantum efficiencies (EQEs) in devices. Herein, low ASE thresholds and efficient EL are reported from a solution‐processable organic laser dye dithiophenyl diketopyrrolopyrrole (DT‐DPP). The ASE threshold of 4 µJ cm−2 at the wavelength of 620 nm is obtained while making constructive use of triplet excitons by doping DT‐DPP in a green‐emitting host matrix, which exhibits thermally activated delayed fluorescence (TADF). The organic light‐emitting diode fabricated from this system gives a high EQE of 7.9% due to the efficient utilization of triplet excitons. Transient EL studies further show that a high reverse intersystem crossing rate is crucial in achieving lasing under electrical pumping from such TADF‐assisted fluorescent systems. [ABSTRACT FROM AUTHOR]

High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4′-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m[SUP2]. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure. [ABSTRACT FROM AUTHOR]

High mechanical flexibility and wavelength tunability of organic semiconductor materials have propelled the development of organic semiconductor lasers (OSLs) as a complementary technology to current inorganic lasers. While excellent progress has been made across multiple aspects of OSLs, demonstration of long‐pulse operation [quasi‐continuous wave (qCW) or continuous wave (CW)] lasing has presented significant challenges due to the detrimental accumulation of triplets under long‐pulse photoexcitation and substantial quenching of singlet excitons, arising from singlet‐triplet annihilation (STA). In particular, qCW or CW lasing from solution‐processed OSL materials has not been reported, and thus remains a long‐thought objective in optoelectronic research. Using a novel bis(N‐carbazolylstyryl)‐9,9‐dihexylfluorene (BSFCz), the first solution‐processable organic laser dye demonstrating lasing oscillation in the long‐pulse photoexcitation regime (up to 10 ms pulse width) with a low threshold (420 W cm−2), which in part can be attributed to its negligible spectral overlap between triplet excited‐state absorption and laser emission, is herein reported. Temporal emission profiles below and above the lasing threshold also demonstrate that STA has a negligible effect on emission. These combined observations show BSFCz incur low losses due to triplet excited‐states, leading to extremely small changes in lasing thresholds when moving from pulsed to qCW (>1 ms) excitation. [ABSTRACT FROM AUTHOR]

Organic semiconductor dyes have attracted high interest as laser gain media owing to their judicious features of solution processability, lightweight, high mechanical flexibility, high wavelength‐tunability, and low‐cost manufacture. In this work, fluorene‐carbazolylstyryl hybrids are reported, SFCz and BSTFCz, as new solution processable organic semiconductor laser dyes to show high molar extinction coefficients (up to 1.98 × 105 dm3 mol−1 cm−1), high photoluminescence quantum yields (up to 81 ± 4%), high radiative decay constants (up to 1.24 × 109 s−1), and low film amplified spontaneous emission thresholds (down to 0.70 µJ cm−2). By using mixed‐order distributed feedback laser structures, extremely low lasing threshold of 0.5 µJ cm−2 is achieved. To elucidate their electroluminescent properties, simple solution‐processed organic light‐emitting diodes based on the new materials are fabricated to show good external quantum efficiencies (2%) and high brightness (≈2800 cd m−2). The results indicate the ease in material synthesis and fabrication enabling solution‐processed low‐threshold lasing toward future injection laser. [ABSTRACT FROM AUTHOR]

Thermally activated delayed fluorescence (TADF) emitters can exhibit high quantum efficiencies by harvesting triplet excitons through efficient reverse intersystem crossing. Reports on efficient TADF based light‐emitting field‐effect transistors (LEFETs) are rare. Moreover, despite efficient TADF organic light‐emitting diodes (OLEDs), most devices have thermally evaporated multilayer device designs. In this work, highly efficient solution processed LEFETs using ACRXTN [3‐(9,9‐dimethylacridin‐10(9H)‐yl)‐9H‐xanthen‐9‐one] are demonstrated to show high external quantum efficiencies (EQEs) of ≈1% and on/off ratios (≈105) at low operating voltages (≈22 V) with negligible EQE roll‐off even at ≈1,500 cd m–2. The same emitter is further studied in solution‐processedOLEDs with a simple architecture to achieve high peak EQEs (≈16%) and brightness (>1000 cd m–2). The OLEDs retain a high EQE (≈10%) at 20 000 cd m–2, indicating excellent charge balance even with such simple device architecture. Our optical simulations identify EQE discrepancy in the two devices, mainly arisen from a poorer light out‐coupling efficiency in the LEFETs (0.8%) than that (≈24%) in the OLEDs. This work shows state‐of‐the‐art of solution‐processed TADF LEFETs and OLEDs with simple device architectures and negligible EQE roll‐off. [ABSTRACT FROM AUTHOR]

Recent studies have demonstrated that in thermally activated delayed fluorescence (TADF) materials, efficient reverse intersystem crossing occurs from nonradiative triplet exited states to radiative singlet excited states due to a small singlet–triplet energy gap. This reverse intersystem crossing significantly influences exciton annihilation processes and external quantum efficiency roll‐off in TADF based organic light‐emitting diodes (OLEDs). In this work, a comprehensive exciton quenching model is developed for a TADF system to determine singlet–singlet, singlet–triplet, and triplet–triplet annihilation rate constants. A well‐known TADF molecule, 3‐(9,9‐dimethylacridin‐10(9H)‐yl)‐9H‐xanthen‐9‐one (ACRXTN), is studied under intensity‐dependent optical and electrical pulse excitation. The model shows singlet–singlet annihilation dominates under optically excited decays, whereas singlet–triplet annihilation and triplet–triplet annihilation have strong contribution in electroluminescence decays under electrical pulse excitation. Furthermore, the efficiency roll‐off characteristics of ACRXTN OLEDs at steady state is investigated through simulation. Finally, singlet and triplet diffusion length are calculated from annihilation rate constants. [ABSTRACT FROM AUTHOR]

The rapid development of charge transporting and light‐emitting organic materials in the last decades has advanced device performance, highlighting the high potential of light‐emitting transistors (LETs). Demonstrated for the first time over 15 years ago, LETs have transformed from an optoelectronic curiosity to a serious competitor in the race for cheaper and more efficient displays, also showing promise for injection lasers. Thus, what is an LET, how does it work, and what are the current challenges for its integration into mainstream technologies? Herein, some light is shed on these questions. This work also provides the fundamental working principle of LETs, materials that have been used, and device physics and architectures involved in the progression of LET technology. The state‐of‐the‐art development of LETs is also explored as prospect avenues for the future of research and applications in this area. [ABSTRACT FROM AUTHOR]

Abstract: Light‐emitting field‐effect transistors (LEFETs) are an emerging type of devices that combine light‐emitting properties with logical switching function. One of the factors limiting their efficiency stems from the spin statistics of electrically generated excitons. Only 25% of them, short lived singlet states, are capable of light emission, with the other 75% being long lived triplet states that are wasted as heat due to spin‐forbidden processes. Traditionally, the way to overcome this limitation is to use phosphorescent materials as additional emission channel harnessing the triplet excitons. Here, an alternative strategy for triplet usage in LEFETs in the form of thermally activated delayed fluorescence (TADF) is presented. Devices employing a TADF capable material, 4CzIPN (2,4,5,6‐tetra[9H‐carbazol‐9‐yl]isophthalonitrile), in both n‐type and p‐type configurations are shown. They manifest excellent electrical characteristics, consistent brightness in the range of 100–1,000 cd m‐2 and external quantum efficiency (EQE) of up to 0.1%, which is comparable to the equivalent organic light‐emitting diode (OLED) based on the same materials. Simulation identifies the poor light out‐coupling as the main reason for lower than expected EQEs. Transmission measurements show it can be partially alleviated using a more transparent top contact, however more structural optimization is needed to tap the full potential of the device. [ABSTRACT FROM AUTHOR]

Solution-processable non-polymeric organic semiconductors are attractive for opto-electronic applications due to their relatively simple synthetic reproducibility and characterization, and enhanced capability for fine-tuning of their properties. We report the synthesis, charge transport, photophysics, and photovoltaic properties of three non-polymeric materials based upon bisarylthiophenyl diketopyrrolopyrrole [DPP(ThAr) 2 ]. The DPP(ThAr) 2 molecules are comprised of solubilizing alkyl groups, 2-ethylhexyl (for 1a ) and 2-octyldodecyl (for 1b and 2 ), which are capped with "electron accepting" moieties - fluorenone ( 1 ) or benzothiadiazole ( 2 ). While the materials could be prepared under standard Suzuki-Miyaura cross-coupling conditions, a simple direct arylation afforded 2 and 1b in good yields. We found 1a with a short alkyl chain lacked sufficient solubility for solution processing but 1b and 2 are solution processable and form good quality films. All three materials exhibited ambipolar charge transport in field effect transistors, with 1b showing balanced charge mobilities of about 10 −3 cm 2 V −1 s −1 . Bulk heterojunction solar cells of 1b or 2 with PC71BM were found to have high open-circuit voltages (up to 0.9 V) with power conversion efficiencies of up to 4.5% and 2.6%, respectively. [ABSTRACT FROM AUTHOR]

Dimers based on diketopyrrolopyrrole (DPP) chromophores have gained tremendous interest as an excellent material building block for organic solar cells and photodiodes. However, a counterintuitive blue-shift in their solution absorption spectra occurs with an increasing number of thiophene units bridging the DPP moieties. We allocate this to aggregates in solution, which might hinder adequate mixing in blends, leading to poor film forming quality and reduced charge generation in solution processed devices. Hence, identification of such aggregates is crucial in order to find measures for device optimisation. In this study, we present synthesis and characterisation of three pyridyl end-capped DPP dimers of different conjugation length using thiophene linkers and compare their parent monomer to evidence the behaviours of aggregates in solution. We employ conventional and temperature dependent UV–Vis spectroscopy, fluorescence and excitation-emission spectroscopy as well as TD-DFT calculations to show that such DPP dimers predominantly form aggregates in solution even at low concentrations. By disentangling the spectroscopic behaviour of both aggregated and non-aggregated species, we refute literature's explanation that the apparent blue shift in absorption arises from a reduced conjugation length due to more molecular flexibility. Instead, absorption and emission signals of non-aggregated dimers are mostly masked by their aggregated species. This work provides a tool set using common laboratory spectroscopic equipment to identify and characterise solution aggregates—information particularly important towards optimisation of organic electronics processed from solution. [ABSTRACT FROM AUTHOR]

Two new heteroleptic Pt(II) complexes bearing an n-hexyloxy substituted phenyllepidine-based ligand and either a picolinate (pic) or acetylacetonate (acac) coligand are synthesized for use in organic light-emitting field-effect transistors (LEFETs). Both compounds are obtained in good yields via a short and straightforward synthetic route. It is found that while both Pt(II) complexes show good chemical stability and solubility, the coligand affects the photoluminescence quantum yield and crystal packing of the complexes. Although aggregate induced phosphorescence enhancement is not observed, it is found that high concentrations of the emitters in a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] host lead to improved charge injection in hybrid LEFETs. LEFETs with area emission, high ON/OFF ratios (>106) and mobilities (≈1.3 cm2 V−1 s−1), and external quantum efficiencies of up to 0.1% at the highest brightness of 855 cd m−2 are demonstrated. [ABSTRACT FROM AUTHOR]

Light-emitting field effect transistors (LEFETs) are a class of organic optoelectronic device capable of simultaneously delivering the electrical switching characteristics of a transistor and the light emission of a diode. We report on the temperature dependence of the charge transport and emissive properties in a model organic heterostructure LEFET system from 300 K to 135 K. We study parameters such as carrier mobility, brightness, and external quantum efficiency (EQE), and observe clear thermally activated behaviour for transport and injection. Overall, the EQE increases with decreasing temperature and conversely the brightness decreases. These contrary effects can be explained by a higher recombination efficiency occurring at lower temperatures, and this insight delivers new knowledge concerning the optimisation of both the transport and emissive properties in LEFETs. [ABSTRACT FROM AUTHOR]

Light emitting field effect transistors (LEFETs) are emerging as a multi-functional class of optoelectronic devices. LEFETs can simultaneously execute light emission and the standard logic functions of a transistor in a single architecture. However, current LEFET architectures deliver either high brightness or high efficiency but not both concurrently, thus limiting their use in technological applications. Here we show an LEFET device strategy that simultaneously improves brightness and efficiency. The key step change in LEFET performance arises from the bottom gate top-contact device architecture in which the source/drain electrodes are semitransparent and the active channel contains a bi-layer comprising of a high mobility charge-transporting polymer, and a yellow–green emissive polymer. A record external quantum efficiency (EQE) of 2.1% at 1000 cd/m 2 is demonstrated for polymer based bilayer LEFETs. [ABSTRACT FROM AUTHOR]

We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm²/V s, current on/off ratios of >107, and external quantum efficiency of 10-2% at 2100 cd/m². These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective. [ABSTRACT FROM AUTHOR]

Inorganic semiconductor-based broadband photodetectors are ubiquitous in imaging technologies such as digital cameras and photometers. Herein a broadband organic photodiode (OPD) that has performance metrics comparable or superior to inorganic photodiodes over the same spectral range is reported. The photodiode with an active layer comprised of a poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2- thienyl-2',1',3'-benzothiadiazole)]:[6,6]-phenyl-C71-butyric acid methyl ester bulk heterojunction blend had a dark current < 1 nA/cm², specific detectivity of ~ 1013 Jones, reverse bias -3 dB frequency response of 100 kHz to 1 MHz, and state-of-the-art Linear Dynamic Range for organic photodiodes of nine orders of magnitude (180 dB). The key to these performance metrics was the use of a thick junction (700 nm), which flattened the spectral response, reduced the dark current and decreased performance variations. The strategy also provides a route to large area defect free "monolithic" structures for low noise integrated photo-sensing, position determination, or contact, non-focal imaging. [ABSTRACT FROM AUTHOR]

Bottom emitting organic light emitting diodes (OLEDs) can suffer from lower external quantum efficiencies (EQE) due to inefficient out-coupling of the generated light. Herein, it is demonstrated that the current efficiency and EQE of red, yellow, and blue fluorescent single layer polymer OLEDs is significantly enhanced when a MoOx(5 nm)/Ag(10 nm)/MoOx(40 nm) stack is used as the transparent anode in a top emitting OLED structure. A maximum current efficiency and EQE of 21.2 cd/A and 6.7%, respectively, was achieved for a yellow OLED, while a blue OLED achieved a maximum of 16.5 cd/A and 10.1%, respectively. The increase in light out-coupling from the top-emitting OLEDs led to increase in efficiency by a factor of up to 2.2 relative to the optimised bottom emitting devices, which is the best out-coupling reported using solution processed polymers in a simple architecture and a significant step forward for their use in large area lighting and displays. [ABSTRACT FROM AUTHOR]

Highlights: [•] Interdigitated high and low work function electrodes were fabricated. [•] The electrode architecture was used in light-emitting field-effect transistors. [•] The fabrication strategy allowed a range of charge injection layers to be used. [•] Highest EQE and recombination efficiency achieved for a fluorescent LEFET. [ABSTRACT FROM AUTHOR]

Most charge generation studies on organic solar cells focus on the conventional mode of photocurrent generation derived from light absorption in the electron donor component (so called channel I). In contrast, relatively little attention has been paid to the alternate generation pathway: light absorption in the electron acceptor followed by photo-induced hole transfer (channel II). By using the narrow optical gap polymer poly(3,6-dithieno[3,2-b]thiophen-2-yl)-2,5-bis(2-octyldodecyl)-pyrrolo-[3,4-c]pyrrole-1,4-dione-5′,5″-diyl-alt-4,8-bis(dodecyloxy)benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl with two complimentary fullerene absorbers; phenyl-C61-butyric acid methyl ester, and phenyl-C71-butyric acid methyl ester (70-PCBM), we have been able to quantify the photocurrent generated each of the mechanisms and find a significant fraction (>30%), which is derived in particular from 70-PCBM light absorption. [ABSTRACT FROM AUTHOR]

Abstract: A new thieno[3,2-b]thiophenediketopyrrolopyrrole-benzo[1,2-b:4,5-b′]dithiophene based narrow optical gap co-polymer (PTTDPP-BDT) has been synthesized and characterized for field-effect transistors and solar cells. In field-effect transistors the polymer exhibited ambipolar charge transport behaviour with maximum hole and electron mobilities of 10−3 cm2 V−1 s−1 and 10−5 cm2 V−1 s−1, respectively. The respectable charge transporting properties of the polymer were consistent with X-ray diffraction measurements that showed close molecular packing in the solid state. The difference in hole and electron mobilities was explained by density functional theory calculations, which showed that the highest occupied molecular orbital was delocalized along the polymer backbone with the lowest unoccupied molecular orbital localized on the bis(thieno[3,2-b]thiophene)diketopyrrolopyrrole units. Bulk heterojunction photovoltaic devices with the fullerene acceptor PC70BM were fabricated and delivered a maximum conversion efficiency of 3.3% under AM1.5G illumination. [Copyright &y& Elsevier]

Conducting and semiconducting polymers are important materials in the development of printed, flexible, large-area electronics such as flat-panel displays and photovoltaic cells. There has been rapid progress in developing conjugated polymers with high transport mobility required for high-performance field-effect transistors (FETs), beginning with mobilities around 10−4 cm2 V−1 s−1 to a recent report of 1 cm2 V−1 s−1 for poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT). Here, the electrical properties of PBTTT are studied at high charge densities both as the semiconductor layer in FETs and in electrochemically doped films to determine the transport mechanism. We show that data obtained using a wide range of parameters (temperature, gate-induced carrier density, source–drain voltage and doping level) scale onto the universal curve predicted for transport in the Luttinger liquid description of the one-dimensional ‘metal’. [ABSTRACT FROM AUTHOR]

Cover Feature: Tunable Light-Emission Properties of Solution-Processable N-Heterocyclic Carbene Cyclometalated Gold(III) Complexes for Organic Light-Emitting Diodes (Chem. Eur. J. 25/2021) Cyclometallation reactions, gold, luminescence, N-heterocyclic carbenes, organic light-emitting devices Keywords: cyclometallation reactions; gold; luminescence; N-heterocyclic carbenes; organic light-emitting devices EN cyclometallation reactions gold luminescence N-heterocyclic carbenes organic light-emitting devices 7186 7186 1 05/05/21 20210503 NES 210503 B N-heterocyclic carbene (NHC) monocyclometalated gold(III) complexes b : Highly efficient photoluminescence was achieved in the sky-blue to green part of the electromagnetic spectrum using strong s-donating cyclometalated NHC ligands and a dianionic (N N)-type bidentate as the ancillary ligand. [Extracted from the article]

We report an n-type organic semiconductor [2-({7-(9,9-di-n-propyl-9H-fluoren-2-yl}benzo[c][1,2,5]thiadiazol-4-yl)methylene]malononitrile (herein referred to as K12) for use in organic field-effect transistors (OFETs). K12 can be processed by spin-coating from solution or by vacuum deposition, organizing into highly orientated microcrystalline structures at modest (75 °C) annealing temperatures. OFETs with n-octyltrichlorosilane or hexamethyldisilazane monolayers, or poly(propylene-co-1-butene) (PPCB) modified dielectric surfaces were prepared. The mobility, ON/OFF ratio, threshold voltage, and current hysteresis were found to be dependent on the thermal history of the film and surface onto which it was deposited. The highest OFET mobility achieved was 2.4×10-3 cm2/V s, for spin-coated films with a PPCB modified silicon dioxide dielectric. [ABSTRACT FROM AUTHOR]

While noteworthy progress has been made on organic solid‐state lasers with low amplified spontaneous emission (ASE) thresholds and high optical gains in blue and green colors, the same advancement has not been achieved for red laser dyes. This is mainly due to their low photoluminescence quantum yields (PLQYs) because of "energy bandgap law." Here, a new family of solution‐processable organic semiconductor laser dyes based on a bay‐annulated indigo derivative (Cibalackrot) with deep‐red emission is reported. They exhibit excellent PLQYs and low ASE thresholds (9.6 µJ cm−2) with deep‐red emission when blended in a mixed host of 1,3‐bis(N‐carbazolyl)benzene (mCP) and 2‐hydroxyphenylbenzothiazole (HBT). In contrast to a single blend in mCP, the co‐blend films are found to significantly enhance the photostability by retaining 90% of initial ASE intensity even after continuous pumping with over 9000 pulses at a pump input energy twice that of the ASE threshold, which can be attributed to efficient cascade energy transfer from mCP to HBT and then to the Cibalackrot chromophore. Low lasing threshold of 6 µJ cm−2 is further achieved at 641 nm by using distributed feedback gratings. Transient absorption spectroscopy measurements indicate that the dye has extremely low yield of triplet excited‐state under optical excitation. The results show Cibalackrot derivatives to be a promising new family of organic deep‐red laser dyes. [ABSTRACT FROM AUTHOR]