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The paper considers schematics of low-power Output Stages (OS) and class AB Buffer Amplifiers (BA) for analog microcircuits realized on arsenide gallium n-channel field-effect transistors with control p-n junction and arsenide gallium bipolar p-n transistors within combined processes. The developed output stages are characterized by a relatively small static current consumption (about 100-200 A), provide operation at load resistances greater than 1-2 k, and have, as a rule, an increased input resistance. The maximum values of BA output currents for the positive polarity of the output voltage (vout) are determined by the width of the JFET channel, and for the negative vout half-wave, by the base current amplification factor of the BJT. In this connection, it is recommended to use compound Darlington p-n-p transistors in BA circuits. The results of computer simulation of the amplitude characteristics of pushpull BAs in LTspice at different load resistances show that the proposed circuit solutions provide the maximum amplitudes of positive and negative output voltages, close to the supply voltages. The circuit solutions considered are recommended for use in low-power operational amplifiers, including those operating under harsh operating conditions. The novelty of the paper lies in the investigation of a family of new pushpull class AB output stages for operational amplifiers, protected by 4 Russian patents and implemented under severe circuit restrictions on the types of GaAs transistors used (nJFET and nBJT). [ABSTRACT FROM AUTHOR]

The paper proposes an extended classification of Active RC Filters (ARCF) and ARLC Filters (ARLCF) with Sallen-Key architectures, including those created in the last three years. This makes it possible to formulate new design directions for an extended family of active RC- and RLC-Sallen-Key filters (BPF, LPF, HPF and RF) for the tasks of high-speed and ultra-fast analog-to-digital signal conversion. [ABSTRACT FROM AUTHOR]