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Presents a study which examined the design and performance of a magnetic susceptometer for thin films and surfaces. Description of the equipment; Operation and capabilities of the device; Response to a magnetic thin film.

Reports on the measurement of the properties of amorphous germanium barriers deposited on liquid nitrogen cooled substrates. Information on the calculated tunnel current; Temperature dependence; Discussion on electron spin polarization.

Presents a study which measured the spin polarization of secondary electrons emitted from iron, cobalt and nickel. Theoretical values of iron, cobalt and nickel; Information on the value of the secondary electrons; Conclusions.

Examines the effect of silicon, silicon oxide, aluminum and palladium interface on the magnetic behavior of quench-condensed nickel films. Magnetic properties of quench-condensed nickel films; Effect of gold or copper over a nickel film on the magnetic behavior of nickel; Frequency change for palladium over the nickel film.

Studies the tunneling characteristics of a ferromagnetic-antiferromagnetic-ferromagnetic thin film tunnel junction in high magnetic fields. Background to the study; Experimental details; Results and discussion.

Comments on the letter by Graneau and Graneau which claims that explosions caused an electric arc through saltwater can be explained by longitudinal Ampere forces and not be Lorenz forces or by thermal expansion of gases generated in the arc column. Existence of longitudinal forces in solid and liquid conductors; Hillas' demonstration of how the effects seen in the solid and liquid systems described by Graneau could be explained by the Lorentz forces.

Ferromagnetic–insulator–ferromagnetic trilayer tunnel junctions show magnetoresistance (JMR) effects of about 14% or greater at room temperature. Much larger values of the JMR (100% or more) are observed when the actual tunneling resistance (RT) is comparable to electrode film resistance (RL) over the junction area. This latter apparent JMR is an artifact of the nonuniform current flow over the junction in the cross geometry of the electrodes. The ferromagnetic films were CoFe and Co or Ni0.8Fe0.2, and the tunnel barrier was AlN or Al2O3. These junctions show nonvolatile memory effects. The geometrically enhanced large JMR in junctions can be effectively used as magnetic sensors and memory elements. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]