Search

The present work focuses on the growth of ZnO films vertically on indium tin oxide substrate using a wet chemical method. The morphological and structural study of the prepared films confirmed the formation of one-dimensional growth with a polycrystalline single-phase hexagonal wurtzite structure. The computed texture coefficient indicates the c-axis growth of the film. The optical spectra study exhibited a strong and sharp characteristics absorption band. The numerical derivative method and the Tauc plot method for the different transition values have been used to compare energy bandgap calculations. [ABSTRACT FROM AUTHOR]

Various coupling schemes are applied to smaller to heavy atoms to describe atomic structure and investigate atomic spectra. jj-coupling is important for heavy atoms in which spin-orbit interactions are dominant over the electrostatic interactions. Here jj-terms and J levels are determined for the nonequivalent fnfn' (n & n' = 1-2) electrons from the analysis of all possible microstates. The determined jj terms are designated of the form[(f1,f2f3......fN)f] notation. [ABSTRACT FROM AUTHOR]

A series of Co3-xMnxO4 (x=0.1–1.0) multiferroic cubic spinel ceramics were prepared to study the effect of Mn substitution at Co site on the crystal structures and dielectric properties. No significant change in the structural symmetry was observed with increasing x up to 1.0. A linear increase in lattice parameter with x is attributed to the substitution of Co3+ by Mn3+ (large ionic radii) at the octahedral sites. An antiferromagnetic-type ordering of Co3O4 changes to ferrimagnetic-type order after incorporation of Mn. The effect of Mn substitution on the dielectric constant and loss tangent was studied over a wide range of frequency (75 kHz–5 MHz) and temperature of 150–450 K. The measured value of room temperature ac conductivity at 1.0 MHz was found to increase from 2.0×10-6 to 4.4×10-4 Ω-1 cm-1 and follows power law (σac=Aωs) behavior. The dielectric constant [variant_greek_epsilon]′(ω) shows a weak frequency dispersion and small temperature dependence below 250 K for all ceramic samples. However, a strong temperature and frequency dependence on [variant_greek_epsilon]′(ω) was observed at higher temperature (>250 K). The temperature dependent [variant_greek_epsilon]′(ω) data show the existence of room temperature ferroelectricity in all prepared samples. [ABSTRACT FROM AUTHOR]

In this article j-j coupled atomic terms for (n-1)fx nd1 (x=1 and 3) configurations using microstate building method were computed and the j-j terms for (n-1)f1 nd1 configuration correlated pictorially with the L-S terms. The j-j coupled atomic terms derived for (n-1)f1 nd1 configuration are [(7/2, 5/2) or (f7/2)1 (d5/2)1], [(7/2, 3/2) or (f7/2)1 (d3/2)1], [(5/2, 5/2) or (f5/2)1 (d5/2)1] and [(5/2, 3/2) or (f5/2)1 (d3/2)1], and for (n-1)f3 nd1 configuration are [(7/2, 7/2, 7/2, 5/2) or (f7/2)3 (d5/2)1], [(7/2, 7/2, 7/2, 3/2) or (f7/2)3 (d3/2)1], [(7/2, 7/2, 5/2, 5/2) or (f7/2)2 (f5/2)1 (d5/2)1], [(7/2, 7/2, 5/2, 3/2) or (f7/2)2 (f5/2)1 (d3/2)1], [(7/2, 5/2, 5/2, 5/2) or (f7/2)1 (f5/2)2 (d5/2)1], [(7/2, 5/2, 5/2, 3/2) or (f7/2)1 (f5/2)2 (d3/2)1], [(5/2, 5/2, 5/2, 5/2) or (f5/2)3 (d5/2)1] and [(5/2, 5/2, 5/2, 3/2) or (f5/2)3 (d3/2)1]. [ABSTRACT FROM AUTHOR]

In this paper, we investigated the structural, chemical and photovoltaic characterization of commonly found natural dyes. The dyes have extracted from plant materials like the bougainvillea, yellow bells (piliya), golden shower (amaltas), hibiscus, peepal and mint. Based on the structure and properties of the dye, which the fact that "like extracts like", a suitable solvent has selected, in which the dyes have extracted efficiently. The extracted dyes act as natural photo-sensitizers, which has mostly used for the fabrication of dye sensitized solar cells (DSSCs). The cells have been fabricated by using TiO2 as a semiconducting layer deposited on transparent fluorine doped tin oxide (FTO) conducting glass plate with the help of doctor blading method. The J-V characteristics curves of all fabricated cells were measured by using source-meter, SMU-instrument etc and further analysed for its better performance was investigated. [ABSTRACT FROM AUTHOR]